排序方式: 共有141条查询结果,搜索用时 218 毫秒
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采用匀胶机旋涂成膜的方法在手套箱中制备了P3HT:PCBM薄膜,详细研究了退火处理对薄膜的吸收、晶体结构以及表面形貌的影响,并全面阐述了它们之间的联系。结果发现退火后薄膜的吸收增强,吸收峰的峰位有所红移,通过XRD测试研究表明是因为薄膜出现了不同程度的晶化,主要是P3HT发生了部分晶化。对表面形貌进一步研究发现退火后薄膜的表面粗糙度有所增加,并形成了一定清晰可见的互穿网络,薄膜发生品化,使薄膜性能得到大大改善。将优化得到的材料用于太阳电池中,电池结构为glass/ITO/PEDOT:PSS/P3HT:PCBM/Al,在AM1.5,100mW/cm~2条件下测试获得电池效率1.41%。 相似文献
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源自海相碳酸盐岩烃源岩原油裂解成气的动力学研究 总被引:4,自引:1,他引:3
对源自海相碳酸盐岩的原油进行了动力学模拟实验,阐述了该原油再次热解过程中气态烃组分的演化特征和生成动力学参数。运用动力学参数将模拟实验结果外推到地质条件下,结果表明:在150℃时,海相碳酸盐岩烃源岩生成的原油将开始热裂解并生成大量天然气,温度达到220℃时,裂解生气基本结束,天然气就全部取代石油;甲烷的生成Easy%RO主要介于1.2%~2.9%之间,C 2-5烃类气体的生成Easy%RO主要介于1.5%~2.5%之间。这一研究结果可为我国的碳酸盐岩烃源岩再次热解产气的定量模拟提供重要依据,有助于海相碳酸盐岩油气的资源评估。 相似文献
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研究了利用微晶萘萃取分离痕量Tl(Ⅲ)的新方法。结果表明,在磷酸介质中,3.0g柠檬酸三钠存在下,当50μg/mL KBr溶液用量为1.0mL,1.0×10-3 mol/L罗丹明B溶液用量为1.4mL,1.0×10-2 mol/L萘丙酮溶液用量为3.0mL时,Tl(Ⅲ)与Br-形成的TlBr-4可与罗丹明B发生反应,从而被微晶萘定量吸附。在此条件下Al(Ⅲ)、Cu(Ⅱ)、Zn(Ⅱ)、Ni(Ⅱ)、Mn(Ⅱ)、Mg(Ⅱ)、Hg(Ⅱ)、Cr(Ⅲ)、Bi(Ⅲ)等不被吸附,据此建立了分离富集Tl(Ⅲ)的新方法。对合成水样中铊进行分离和测定,效果良好。 相似文献
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Modified textured surface boron-doped ZnO (ZnO:B) transparent conductive layers for thin-film solar cells were fabricated by low-pressure metal organic chemical vapor deposition (LP-MOCVD) on glass substrates. These modified textured surface ZnO:B thin films included two layers. The first ZnO:B layer, which has a pyramid- shaped texture, was deposited under conventional growth conditions, and the second layer, which has a sphere- like structure, at a relatively lower growth temperature. Typical bi-layer ZnO:B thin films exhibit a high electron mobility of 27.6 cm^2/(V.s) due to improved grain boundary states. For bi-layer ZnO:B, the haze value increases and the total transmittance decreases with the increasing film thickness of the second modification layer. When applied in hydrogenated microcrystalline silicon (μc-Si:H) thin-film solar cells, the modified textured surface ZnO:B layers present relatively higher conversion efficiency than conventional ZnO:B films. 相似文献
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RF-PECVD法制备高Ge含量微晶Si-Ge薄膜及太阳电池 总被引:4,自引:4,他引:0
采用射频等离子体增强化学气相沉积 (RF-PECVD) 技术,研究了衬底温度对高Ge 含量(≈50%)微晶Si-Ge(μc-SiGe:H)薄膜结构特性 和电学特性的影响。结 果表明:较低的衬底温度会抑制 μc-SiGe:H薄膜(220)晶向的择优生长;而当衬底温度过高 时,μc-SiGe:H薄膜的O含量和微 结构因子较大。在衬底温度为200℃时,获得了光电特性和结构特性 较优的高Ge含 量μc-SiGe:H薄膜。将优化好的μc-SiGe:H薄膜应用到电池中,在本征层 为600nm的情况下, 获得了转换效率为3.31%(Jsc=22.5mA/cm2,Voc=0.32V,FF=0.46)的单结μc-Si Ge:H电池,电池在1100nm处的光谱响应 达5.49%。 相似文献
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Optimization of n/i and i/p buffer layers in n-i-p hydrogenated microcrystalline silicon solar cells 总被引:1,自引:0,他引:1
Hydrogenated microcrystalline silicon (μc-Si:H) intrinsic films and solar cells with n-i-p configuration were prepared by plasma enhanced chemical vapor deposition (PECVD). The influence of n/i and i/p buffer layers on the μc-Si:H cell performance was studied in detail. The experimental results demonstrated that the efficiency is much improved when there is a higher crystallinity at n/i interface and an optimized a-Si:H buffer layer at i/p interface. By combining the above methods, the performance of μc-Si:H single-junction and a-Si:H/μc-Si:H tandem solar cells has been significantly improved. 相似文献