The influence of dependence of HEMT’s model parameters on gate and drain voltages on upper boundary of LNA’s linearity

On the basis of numerical model the parameters of high electron mobility transistors (HEMT’s) as a function of gate and drain voltages are obtained. The simulation of nonlinear properties of low noise amplifier cascade with HEMT for various modes of its operation has shown that the account of its dependence simultaneously on both the voltages allows to approach the results of calculation to experimental data.     

ATM协议的测试研究及其应用

协议一致性测试和互操作性测试是保证不同厂商的ＡＴＭ产品和服务实现完全的互通的重要技术手段，本文分析了ＡＴＭ协议的测试需求，提出了适合的测试结构和测试描述技术，并结合适配层协议ＣＰＡＡＬ５讨论了协议集成测试系统ＰＴＴＳ在ＡＴＭ协议测试中的应用。     

多棒高功率固体激光器动态模匹配研究

采用光学矩阵分析了多元热透镜谐振腔内模式的动态匹配特征,给出了平平腔参数调整的关系式,实验结果与理论分析相符,并在两棒连续Nd:YAG系统上得到0W～530W功率范围的稳定输出.     

分子振动态及其跃迁的激光相干控制

讨论了激光合成相干叠加态的原理及其性质 ,针对 XY2 型分子 ,证明了合成局域模振动的可行性 ,然后给出相干叠加态的跃迁几率特征 ,发现它仍表现出相干的特性 ,对之进行分析研究表明 ,分子的振动态具有可控性 ,态跃迁几率具有可控性。     

Effect of rare-earth doping on the electrical and photoelectrical properties of furazano [ 3,4-b] piperazine (FP) thin-film devices

Schottky diodes of rare-earth, praseodymium (Pr)-doped and samarium (Sm)-doped furazano [3,4-b] piperazine (FP), sandwiched between Al and indium-tin oxide (ITO) were made by a spin-coating technique. The diodes, in which doped FP behaves as a p-type organic semiconductor, exhibit rectification behaviour. The p-type semiconductivity and rectification properties of the devices improve with rare-earth doping. The electrical effects observed in these devices are explained in terms of the p-type semiconducting behaviour of the doped FP thin films and the formation of a blocking contact (Schottky barrier) with the Al electrode and ohmic contact with the ITO electrode. Various electrical parameters such as carrier mobility, position of Fermi level, free carrier concentration, trap density, trap level and conductivity of doped FP are calculated and discussed. It is found that the position of the Fermi level shifts toward the valence band on rare-earth doping; concentration of free carriers and carrier mobility increase on doping. From the capacitance-voltage (C-V measurements, various electrical parameters such as barrier height, density of ionized acceptor atoms and depletion layer width are calculated and discussed. From the action spectra and absorption spectra it is confirmed that the Al-doped FP interface forms a Schottky barrier and the ITO-doped FP interface shows ohmic contact. The photovoltaic measurement on the two devices reveals that the short circuit current, open circuit voltage, fill factor and power conversion efficiency increase on rare-earth doping.     

Measurements of Stress Intensity Factors of an Interface Crack Under Mixed Mode Loading

The optical method of caustics has been utilised to measure both the stress intensity factor for a crack lying along the interface of an aluminium/epoxy bimaterial specimen, and the mode mixity arising from the difference in the elastic properties across the interface. Measurements were carried out by using a novel modification to the method whereby caustics are produced and measured from both sides of the specimen, so compensating automatically for the distortion induced in the specimen due to misaligned loading fixtures. A flat reflective surface across the interface was obtained by adhering a reflective coating to the specimen. Verification that this coating does not affect measurement accuracy was obtained by comparing stress intensity factors measured from coated and uncoated monolithic aluminium specimens where good agreement was found to exist between both measurements.     

耦合腔行波管慢波结构的工作模式及其特性

耦合腔行波管慢波结构可工作于三种不同模式：正常模、简并模和反向模。应用改进的等效电路法计算了正常模腔通带和槽通带。求得的简并模耦合槽张角与实验值相符。最后讨论了反向模耦合腔行波管诱人的特点。     

自升式平台深水化改造的新模式及其可行性分析

针对我国现有自升式平台存在的不能满足深水域勘探开发的要求以及造价过高等问题,提出一种自升式平台深水化改造新模式——分体坐底自升式平台,在基本不改变原有平台结构的基础上,通过增加可沉浮平台下体,使作业水深增加50m以上,而造价比同工作水深的常规自升式平台低得多。文章介绍了该分体坐底自升式平台的结构方案、作业工况及操作程序,分析了该平台的技术可行性和经济可行性,并提出了深入研究和具体实施需要解决的问题。     

BT项目实施模式分析

根据实践中出现的各种BT项目管理模式，归纳出了具有代表性的“施工二次招标型BT模式，直接施工型BT模式，施工同体型BT模式，带资承包型BT模式”四种BT项目管理模式，并根据现行法律法规对其适用性和实施中应注意的问题进行了论述。     

公伯峡水电站高压电缆设计几个技术问题分析

结合公伯峡水电站电缆系统设计，对合理选择电缆截面、敷设方式及保护措施等技术问题加以介绍。由于目前电缆设计标准不太完善，因此设计中应结合电站具体情况，合理地选择和提出技术要求。