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71.
基于Mindlin板理论,采用微扰方法分析得到超声导波与板状结构微损伤相互作用的散射波场,并利用有限元方法模拟研究含损伤的板状结构中激光超声导波场。构建散射波的传递矩阵,采用时间逆转损伤成像评价结构微损伤。将时间逆转损伤成像结果与超声相控阵成像结果进行比较。结果表明,相比于传统的超声相控阵损伤成像,时间逆转成像方法灵敏度高,能对板中的多损伤精确识别,且损伤成像精度更精细。 相似文献
72.
Electron channelling contrast imaging (ECCI) performed in a scanning electron microscope (SEM) is a rapid and non-destructive structural characterisation technique for imaging, identifying and quantifying extended defects in crystalline materials. In this review, we will demonstrate the application of ECCI to the characterisation of III-nitride semiconductor thin films grown on different substrates and with different crystal orientations. We will briefly describe the history and the theory behind electron channelling and the experimental setup and conditions required to perform ECCI. We will discuss the advantages of using ECCI, especially in combination with other SEM based techniques, such as cathodoluminescence imaging. The challenges in using ECCI are also briefly discussed. 相似文献
73.
Andreas Vetter Finn S. Babbe Bernhard Hofbeck Peter Kubis Michael Richter Stephan J. Heise Jrg Ohland Ingo Riedel Christoph J. Brabec 《Progress in Photovoltaics: Research and Applications》2016,24(7):1001-1008
Local electric defects may result in considerable performance losses in solar cells. Infrared (IR) thermography is one important tool to detect these defects on photovoltaic modules. Qualitative interpretation of IR images has been carried out successfully, but quantitative interpretation has been hampered by the lack of “calibration” defects. The aims of this study are to (i) establish methods to induce well‐defined electric defects in thin‐film solar cells serving as “calibration” defects and to (ii) assess the accuracy of IR imaging methods by using these artificially induced defects. This approach paves the way for improving quality control methods based on imaging in photovoltaic. We created ohmic defects (“shunts”) by using a focused ion beam and weak diodes (“interface shunts”) by applying a femto‐second laser at rather low power on copper indium gallium selenide cells. The defects can be induced precisely and reproducibly, and the severity of the defects on the electrical performance can be well adjusted by focused ion beam/laser parameters. The successive assessment of the IR measurement (ILIT‐Voc) revealed that this method can predict the losses in Pmpp (maximal power extractable) with a mean error of below 10%. Copyright © 2016 John Wiley & Sons, Ltd. 相似文献
74.
P. C. McIntyre B. P. Chang N. Sonnenberg M. J. Cima 《Journal of Electronic Materials》1995,24(6):735-745
Defects were characterized in epitaxial (001) CeO2 films deposited and planarizedin situ on patterned (001) LaAlO3 substrates by ion beam assisted deposition (IBAD). A hill and valley structure with steps running parallel to the [100] LaAlO3 axis was produced on the surface of the substrate by photolithography and ion beam etching prior to film deposition. A conformai
epitaxial CeO2 layer of ∼ 100 nm thickness was deposited on the heated substrate by e-beam evaporation. Lattice-matching between the e-beam
film and the substrate was of the type: (001) CeO2∥(001) LaAlO3 and [110] CeO2∥[100] LaAlO3. Evaporative deposition of additional film onto the conformai layer was accompanied by bombardment with a 500 eV argon/oxygen
ion beam to promotein situ planarization. Extreme lattice misfit for the orientation (001) CeO2∥(001)LaAlO3 and [001] CeO2∥[001] LaAlO3 caused formation of dislocations in the e-beam CeO2 film in the vicinity of individual ledges in the substrate surface. Coherence of the CeO2 film was locally lost in the step regions of the hill and valley structure. The large patterned steps, which are composed
of numerous adjacent ledges in the LaAlO3 surface, caused nucleation of CeO2 with a tilt misalignment of up to ∼5‡ about the substrate [100]. Nucleation and growth of nonepitaxial CeO2 crystallites was observed along the step regions of the film during the IBAD portion of deposition. Defect formation in the
e-beam ceria layer due to substrate surface relief indicates that “lattice engineering≓ of multilayer epitaxial structures
may not be possible when nonplanar surfaces are created during device fabrication. The IBAD CeO2 layer was more defective than the conformai layer deposited without the impinging ion beam, even in the portions of the film
where epitaxy was maintained throughout both layers. 相似文献
75.
Manoj Sachdev 《Journal of Electronic Testing》1995,6(3):265-276
Owing to the non-binary nature of their operation, analog circuits are influenced by process defects in a different manner compared to digital circuits. This calls for a careful investigation into the occurrence of defects in analog circuits, their modeling related aspects and their detection strategies. In this article, we demonstrate with the help of a real CMOS circuit that simple test stimuli, like DC, transient and AC, can detect most of the modeled process defects. Silicon devices tested with the proposed test methodology demonstrate the effectiveness of the method. Subsequently, the proposed test method is implemented in production test environment along with the conventional test for a comparative study. This test methodology is structured and simpler, therefore results in substantial test cost reduction. 相似文献
76.
77.
Xuping Liu Qinghua Li Juanjuan Zheng Jiewen Xu Zixia Chen Zimin Li Jie Liu Shengyong Liang Deng Wang Zhenghe Zhang Xiao Jin Jihuai Wu Xingcai Zhang 《Advanced functional materials》2023,33(41):2308108
The interface energetics-modification plays an important role in improving the power conversion efficiency (PCE) among the perovskite solar cells (PSCs). Considering the low carrier mobility caused by defects in PSCs, a double-layer modification engineering strategy is adopted to introduce the “spiderman” NOBF4 (nitrosonium tetrafluoroborate) between tin dioxide (SnO2 and perovskite layers. NO+, as the interfacial bonding layer, can passivate the oxygen vacancy in SnO2, while BF4− can optimize the defects in the bulk of perovskite. This conclusion is confirmed by theoretical calculation and transmission electron microscopy (TEM). The synergistic effect of NO+ and BF4− distinctly heightens the carrier extraction efficiency, and the PCE of PSCs is 24.04% with a fill factor (FF) of 82.98% and long-term stability. This study underlines the effectiveness of multifunctional additives in improving interface contact and enhancing PCE of PSCs. 相似文献
78.
Jingjie Liu Mengting Zheng Jiantao Li Yifei Yuan Chenghang Li Shanqing Zhang Lin Yang Zhengyu Bai Jun Lu 《Advanced functional materials》2023,33(2):2209753
Exploring efficient electrocatalysts for oxygen evolution reaction (OER) is an urgent need to advance the development of sustainable energy conversion. Though defect engineering is considered an effective strategy to regulate catalyst activity for enhanced OER performance, the controllable synthesis of defective oxides electrocatalysts remains challenging. Here, oxygen defects are introduced into NiCo2O4 nanorods by an electrochemical lithiation strategy. By tuning in situ lithiation potentials, the concentration of oxygen defects and the corresponding catalytic activity can be feasibly regulated. In addition, the relationship between the changes in the defect density and electronic structure and the lithiation cut-off voltages is revealed. The results show that NiCo2O4 nanorods undertook intercalation and two-step conversion reaction, in which the lithiation-induced conversion reaction gives rise to a CoO@NiO-based structure with higher defect density and lower oxidation states. As a result, the defective CoO@NiO-based catalyst exhibits exceptional OER activity with an overpotential of 270 mV at 10 mA cm−2, which is about 74 mV below the pristine nanomaterials. This research proposes a novel strategy to explore high-performance catalysts with structural stability and defect control. 相似文献
79.
本文介绍了用局部不接触法修复轧机支承辊表面裂纹的方法。实践证明,这种方法操作简单、节省金属、效果良好、可在现场进行,而且具有较大的经济效益。 相似文献
80.
Kh.A. Abdullin Yu.V. Gorelkinskii S.M. Kikkarin B.N. Mukashev A.S. Serikkanov S.Zh. Tokmoldin 《Materials Science in Semiconductor Processing》2004,7(4-6):447
Electrical and optical properties of bistable shallow donors in monocrystalline silicon, which are introduced by proton implantation followed by annealing at 450 °C, have been studied. The temperature dependences of equilibrium and non-equilibrium carrier concentration and relaxation kinetics were investigated. IR absorption lines of bistable shallow donor electronic excitations were detected. The obtained experimental data demonstrate that the bistable shallow donors can be identified as quantum wire defect nanoclusters. 相似文献