功率MOSFET并联应用及研究

对作用在C类状态下频率为MHz以上的功率MOSFET并联均流情况进行了研究,分析功率MOSFET并联时造成不均流的各种因素,着重解析稳态和暂态电流平衡问题,并通过仿真提出一些解决方法和建议。实验结果表明,使用参数尽量一致的MOSFET管对称分布进行并联,并采取合理的电路布局,通过调节电路参数能获得较好的均流效果。     

La基高k栅介质的研究进展

SiO2作为栅介质已无法满足MOSFET器件高集成度的需求,高k栅介质材料成为当前研究的热点。综述了高k栅介质材料应当满足的各项性能指标和研究意义,总结了La基高k栅介质材料的最新研究进展,以及在改正自身缺点时使用的一些实验方法,指出了有可能成为下一代MOSFET栅介质的几种La基高k材料。La基高k材料的研究为替代SiO2的芯片制造工艺提供优异的候选材料及理论指导,这是一项当务之急且浩大的工程。     

一款新型电荷泵功率管驱动电路

提出了一款新型功率管驱动电路。P沟道功率管驱动电路加入了防死锁模块防止了死锁的出现,提高了瞬态响应;N沟道功率管驱动电路加入了附加的充电支路,提高了驱动能力和瞬态响应。整个电路基于0.6μm BCD工艺,在Cadence Spectre下仿真。和传统的功率管驱动电路相比,新的P沟道功率管驱动电路的上升时间由60ns减少到14ns,下降时间由240ns减少到30ns,并且功耗从2mW减少到1mW;新的N沟道功率管驱动电路的上升时间由360ns减少到27ns,功耗从1.1mW减少到0.8mW。     

Above 700 V superjunction MOSFETs fabricated by deep trench etching and epitaxial growth

Silicon superjunction power MOSFETs were fabricated with deep trench etching and epitaxial growth,based on the process platform of the Shanghai Hua Hong NEC Electronics Company Limited.The breakdown voltages of the fabricated superjunction MOSFETs are above 700 V and agree with the simulation.The dynamic characteristics,especially reverse diode characteristics,are equivalent or even superior to foreign counterparts.     

MOSFET集约模型的发展

MOSFET集约模型作为连接半导体生产商与电路设计者之间的桥梁,是半导体行业不可或缺的一环。随着对器件物理效应的不断深入了解,以及不断满足电路设计新要求,MOSFET集约模型经历了长时间的发展。从模型的基础出发,介绍了基于阈值电压Vth、反型层电荷Qi和表面势Φs这三类MOSFET集约模型的发展历程及其主要特征。     

A novel MOSFET with vertical signal‐transfer capability for 3D‐structured CMOS image sensors

We have developed a novel MOSFET that can transfer signals vertically without through‐silicon vias but by using a fully depleted silicon‐on‐insulator (FDSOI) structure with its source region connected to the back electrodes as well as the front ones. A prototype MOSFET fabricated using the backside anisotropic wet etching technique has confirmed that the electrical characteristics measured from the front and the back electrodes are identical. The subthreshold factor S of the prototype was found to be 64.5 mV/decade, suggesting a good switching performance. Since the double‐sided MOSFET has vertical signal‐transfer capability and excellent operating characteristics, it is expected to contribute to developing a More‐than‐Moore type device of three‐dimensional integration such as pixel‐parallel image sensors. © 2014 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

Drain current model of double‐gate MOSFETs considering both electrons and holes

We present a rigorously derived current solution for undoped double‐gate (DG) MOSFETs with two carriers, which is based on surface potentials. The third‐order Newton–Raphson (NR) method is used to solve the surface‐potential equations resulting from the application of the boundary conditions to the general Poisson solution, with an initial guess very close to the true solution. The results demonstrate surface‐potential solutions for DG MOSFETs with 2–7 iterations to achieve an accuracy of 10⁻¹⁵. The drain current model for two carriers is presented as a benchmark to test the accuracy of one‐carrier current approximation. © 2014 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.     

动态电源管理——实现更快速、更高效的电池充电

平板电脑和智能手机等新兴便携式设备需求的快速增长,给电池供电型系统提出了许多新挑战。电池管理系统,必须能够智能地支持不同类型的适配器和电池化学成份,并且必须拥有高效的快速充电能力和良好的用户体验。本文将讨论如何通过动态电源管理(DPM),实现快速电池充电和提高电池充电性能,并介绍一些延迟电池使用时间的重要设计考虑。     

考虑寄生电感的SiC MOSFET半桥电路串扰峰值预测方法

针对光伏并网逆变器中的串扰问题,提出一种考虑寄生电感影响的非开尔文封装SiC MOSFET串扰峰值预测算法。以TO-247-3封装SiC MOSFET构成的半桥电路为研究对象,首先分析各个阶段的串扰电压数学模型,并推导串扰电压的微分表达式;其次提出串扰峰值的预测算法,建立预测峰值所需参数的数学模型;最后搭建实验平台,验证理论的正确性和算法的有效性,为设计光伏并网逆变器的驱动和保护电路提供参考依据。     

高幅度任意波形/函数发生器简化汽车、半导体、科学和工业应用中的测量

本文描述了使用外部放大器生成高幅度信号的传统方法,然后讨论了典型应用,说明了使用集成高幅度阶段的新型任意波形/函数发生器的各种优势.