Annealing effects of a high-quality ZnTe substrate

The sharp photoluminescence (PL) and optical-reflection spectra in the bandedge region of the high-quality nondoped ZnTe substrate (100) were observed at 4.2 K. Free exciton, associated with lower and upper polaritons (EX^L and EX^U) at 2.382 eV and 2.381 eV, respectively, were clearly observed. This meant that this substrate was high quality. The intensity of a bound exciton peak (2.375 eV), which is caused by a Zn vacancy, of a neutral acceptor decreased with an increase of the Zn vapor pressures.     

Molecular beam epitaxy growth of high-quality HgCdTe LWIR layers on polished and repolished CdZnTe substrates

We report here molecular beam epitaxy (MBE) mercury cadmium telluride (HgCdTe) layers grown on polished and repolished substrates that showed state-of-the-art optical, structural, and electrical characteristics. Many polishing machines currently available do not take into account the soft semiconductor materials, CdZnTe (CZT) being one. Therefore, a polishing jig was custom designed and engineered to take in account certain physical parameters (pressure, substrate rotational frequency, drip rate of solution onto the polishing pad, and polishing pad rotational velocity). The control over these parameters increased the quality, uniformity, and the reproducibility of each polish. EPIR also investigated several bromine containing solutions used for polishing CZT. The concentration of bromine, as well as the mechanical parameters, was varied in order to determine the optimal conditions for polishing CZT.     

Dual-band infrared detectors made on high-quality HgCdTe epilayers grown by molecular beam epitaxy on CdZnTe or CdTe/Ge substrates

In this paper, we present all the successive steps for realizing dual-band infrared detectors operating in the mid-wavelength infrared (MWIR) band. High crystalline quality HgCdTe multilayer stacks have been grown by molecular beam epitaxy (MBE) on CdZnTe and CdTe/Ge substrates. Material characterization in the light of high-resolution x-ray diffraction (HRXRD) results and dislocation density measurements are exposed in detail. These characterizations show some striking differences between structures grown on the two kinds of substrates. Device processing and readout circuit for 128×128 focal-plane array (FPA) fabrication are described. The electro-optical characteristics of the devices show that devices grown on Ge match those grown on CdZnTe substrates in terms of responsivity, noise measurements, and operability.     

Processing, microstructure, properties and wear behavior of in situ synthesized TiB2 and TiC thick films on steel substrates

TiB₂ and TiC reinforced Fe matrix thick films (2 mm thickness) were produced through the synthesis reaction from Ti, C and FeB powders with varying porosity on the steel substrates. Powder technology was used as a processing method. The films and the substrates were sintered in a single step. TiB₂, TiC and Fe were detected in the films by X-ray diffraction analysis. The fact that no other reaction product was detected revealed the thermal stability of TiB₂ and TiC. The formation of secondary reaction products was inhibited during the reactive sintering. The films showed maximum strength of 163-466 MPa when sintered separately at 1350 °C. The strength of the films varied with their porosity. The films showed considerable bonding strength with the steel substrates. The delamination of the films from the steel substrates was observed at stress values from 454-781 MPa. The microstructure, fracture and delaminated surface morphologies were studied. The wear resistance against hardened high speed steel was studied in reciprocating sliding tests. The wear mechanisms were discussed by means of microscopical observation on the worn surfaces.     

Reliability of transparent conducting substrates for rollable displays: A cyclic loading investigation

Abstract— Failure mechanisms for flexible conducting substrates are investigated herein in the context of rollable/flexible display applications. Cyclic loading experiments (substrates subjected to multiple cycles of tensile strain) were carried out on both ITO‐coated PET and PEDOT:PSS‐coated PET substrates. The resistance was measured after each bending cycle. The resistance increased with the number of cycles and was not reversible. Even when the tensile strain on the ITO/PET was below the virgin cracking threshold (～2%) previously reported [Appl Phys Lett ⁷⁶, 1425 (2000)], slight increases in resistance were measurable after just a few cycles.     

Fed-batch digestion of insoluble solid-state substrates

Performance equations for the fed-batch digestion of insoluble solid-state substrates were developed based on a verified interfacial kinetic model for microbial uptake of these substrates. Fed-batch anaerobic digestions of a suspension of stearic acid with a mean particle size of 2 μm were conducted to verify the derived equations. Agreement between the experimental and calculated results indicated the validity of these equations. The performance equations should be useful for describing the time courses of cell growth, substrate consumption and product accumulation in a fed-batch digestion system with insoluble solid-state organics as substrate.     

Substrate issues for the growth of mercury cadmium telluride

Close lattice matching and lattice compatibility with mercury cadmium telluride (MCT) make CdTe and related alloys ideal substrate materials for growth of MCT layers for the purpose of making high-performance second-generation infrared detectors. However, the limitations in the properties of CdTe and the difficulties in its bulk growth have prompted extensive research in the area of alternative substrates. Some basic relevant characteristics of substrates such as sapphire, GaAs, and silicon are compared and the possibilities and problems associated with each material are analyzed in the light of the most recent results in the field.     

在特种承印物上印刷

讨论了在塑料、金属、木材和玻璃上的印刷以及使用的相关印料,加工步骤及其工艺特点。提出了这些承印物印刷加工的技术要点和保证产品质量应注意的问题。     

Progress in the Molecular Beam Epitaxy of HgCdTe on Large-Area Si and CdZnTe Substrates

This paper presents the progress in the molecular beam epitaxy (MBE) growth of HgCdTe on large-area Si and CdZnTe substrates at Raytheon Vision Systems. We report a very high-quality HgCdTe growth, for the first time, on an 8 cm × 8 cm CdZnTe substrate. This paper also describes the excellent HgCdTe growth repeatability on multiple 7 cm × 7 cm CdZnTe substrates. In order to study the percentage wafer area yield and its consistency from run to run, small lots of dual-band long-wave infrared/long-wave infrared triple-layer heterojunction (TLHJ) layers on 5 cm × 5 cm CdZnTe substrates and single-color double-layer heterojunction (DLHJ) layers on 6-inch Si substrates were grown and tested for cutoff wavelength uniformity and micro- and macrovoid defect density and uniformity. The results show that the entire lot of 12 DLHJ-HgCdTe layers on 6-inch Si wafers meet the testing criterion of cutoff wavelength within the range 4.76 ± 0.1 μm at 130 K and micro- and macrovoid defect density of ≤50 cm⁻² and 5 cm⁻², respectively. Likewise, five out of six dual-band TLHJ-HgCdTe layers on 5 cm × 5 cm CdZnTe substrates meet the testing criterion of cutoff wavelength within the range 6.3 ± 0.1 μm at 300 K and micro- and macrovoid defect density of ≤2000 cm⁻² and 500 cm⁻², respectively, on the entire wafer area. Overall we have found that scaling our HgCdTe MBE process to a 10-inch MBE system has provided significant benefits in terms of both wafer uniformity and quality.     

氧化物缓冲层制备Si(111)基GaN纳米线

采用氧化物缓冲层,通过射频磁控溅射系统依次在n型Si(111)衬底上沉积Ga2O3/ZnO(Ga2O3/MgO)薄膜,然后将薄膜于950℃氨化合成GaN纳米结构,氨化时间为15min。采用X射线衍射(XRD)、傅里叶红外吸收谱(FTIR)和高分辨透射电镜(HRTEM)对样品的结构进行了分析,结果显示两种缓冲层下制备的样品均为六方纤锌矿单晶GaN纳米结构,且缓冲层的取向对纳米线的生长方向有很大影响;采用扫描电镜(SEM)对样品的形貌进行了测试,发现纳米线表面光滑,长度可达几十微米,表明采用氧化物缓冲层制备了高质量的GaN线。同时对GaN纳米线的生长机理进行了简单讨论。