光刻胶灰化工艺与深亚微米线条的制作

随着器件尺寸的缩小，细线条的制作成为很关键的工艺，普通光学光刻已接近其分辨率的极限，而电子束光刻和Ｘ射线光刻技术复杂、费用昂贵。本文对光刻胶灰化工艺进行了分析和研究，并应用此工艺进行了深亚微米线条的制作，在普通光学光刻机上制作出宽度小于０．２５μｍ细线条。我们已将此工艺成功地应用在深亚微米ＭＯＳＦＥＴ的制作中。     

纳米技术的研究现状与将来

纳米科学技术将成为２１世纪最重要的高技术之一。纳米技术的最终目标是直接操纵单个原子和分子，制造量子功能器件，从而开拓人类崭新的生产生活模式。文章评述利用电子束、离子束的精细技术和ＳＴＭ原子操纵技术的研究现状，介绍原子层蚀刻，单层抗蚀剂自形成蚀刻，纳米自然蚀刻和电子束全息纳米蚀刻等高技术前沿动态，展望纳米技术的发展前景。     

同步辐射x射线光刻制作深亚微米T形栅

x射线光刻非常适合用于深亚微米T形栅的制作,这是因为它的高分辨率、大的曝光视场和高的生产效率足以满足MMIC制造工艺的要求。本文中我们首先对我们的x射线掩模制造工艺进行介绍,然后论述了一种用于制造深亚微米T形栅的两层胶工艺,介绍了所取得的一些研究结果,最后对国内的深亚微米光刻现状进行了简要分析。     

X射线聚束透镜原理及其应用

本文阐述了一种新型的Ｘ射线聚束装置─—Ｘ射线透镜的聚束原理。给出了透镜的基本设计方法，并对它应用于Ｘ射线光刻研究领域的前景作了展望。     

同步辐射光刻技术

同步辐射光刻有希望代替传统光刻技术,用于0.25μm以下图形的超精细加工。本文叙述了它的原理、相关技术的开发现状和工艺应用。     

Microfabrication by X‐ray‐induced polymerization above the lower critical solution temperature

A polymer synthesis method is presented in which chain growth driven by exothermic reaction stimulates a gradual chain collapse. The globular precipitates in such systems can be restrained from coalescing by polymerizing in a quiescent environment. Time‐resolved small‐angle scattering study of the methacrylic acid polymerization kinetics in a quiescent system above its lower critical solution temperature (LCST) in water reveals the following features of this method: (a) growing oligomers remain as rigid chains until a critical chain length is reached, at which they undergo chain collapse, (b) radius of gyration increases linearly with time until a critical conversion is reached, and (c) radius of gyration remains constant after the critical conversion, even while conversion is gradually increasing. Following this self‐stabilizing growth mechanism, we show that nanoparticles can be directly synthesized by polymerizing N‐isopropylacrylamide above its LCST in water. The average size of nanoparticles obtained from a polymer–solvent system is expected to be the maximum extent of reaction spread at that monomer concentration. This hypothesis was then verified by polymerizing N‐isopropylacrylamide above their LCST in water, but by initiating the reaction with X‐rays shielded by a mask. The microfabricated patterns conform well to the size and shape of the mask used confirming that the growing chains do not propagate beyond the exposed regions as long as the reaction temperature is maintained above the LCST. © 2006 Wiley Periodicals, Inc. J Appl Polym Sci 102: 429–425, 2006     

Sequence‐Specific Molecular Lithography Towards DNA‐Templated Electronics

Recent advances in the realization of individual molecular‐scale devices [1,2] highlight the integration of individual devices into large‐scale functional circuits as the major challenge. DNA‐programmed assembly is a promising avenue in that direction due to the large amount of information that can be coded into the molecules and the ability to translate that information into physical constructs [3]. Large‐scale DNA‐templated electronics require, however, complex manipulation of double‐stranded DNA (dsDNA) molecules, as well as patterning of the electrical properties instilled to them by, e.g., metallization. To that end, sequence‐specific molecular lithography on single DNA molecules has been developed [4]. This was achieved by harnessing the exquisite homologous recombination process of the RecA protein. Sequence‐specific patterning of the metal coating of DNA molecules, localization of arbitrary labeled molecular objects at any desired dsDNA address without prior modifications, and generation of molecularly accurate stable dsDNA‐dsDNA junctions are demonstrated. The information encoded in the DNA molecules directs the lithographic process in analogy to the masks used in conventional microelectronics. The RecA protein provides the assembling capabilities, as well as the resist function.     

A positive‐working photosensitive polyimide based on thermal cross‐linking and acidolytic cleavage

A novel positive‐working photosensitive polyimide (PSPI) based on a poly(hydroxyimide) (PHI), a crosslinking agent having vinyl ether groups, and a photoacid generator (PAG) was prepared. The PHI as a base resin of the three‐component PSPI was synthesized from 4,4′‐oxydiphthalic anhydride and 2,2′‐bis(3‐amino‐4‐hydroxyphenyl)hexafluoropropane through ring‐opening polymerization and subsequent thermal cyclization. 2,2′‐bis(4‐(2‐(vinyloxy)ethoxy)phenyl)propane (BPA‐DEVE) was used as a vinylether compound and diphenyliodonium 5‐hydroxynaphthalene‐1‐sulfonate was used as a PAG. The phenolic hydroxyl groups of the PHI and the vinyl ether groups of BPA‐DEVE are thermally crosslinked with acetal structures during prebake step, and the crosslinked PHI becomes completely insoluble in an aqueous basic solution. Upon exposure to UV light (365 nm) and subsequent postexposure bake (PEB), a strong acid generated from the PAG cleaves the crosslinked structures, and the exposed area is effectively solubilized in the alkaline developer. The dissolution behavior of the PSPI containing each 11.5 wt % of BPA‐DEVE and of the PAG was studied after UV exposure (365 nm) and PEB. It was found that the difference in dissolution rates between exposed and unexposed areas was enough to get high resolution. A fine positive pattern with a resolution of 5 μm in a 3.7‐μm‐thick film was obtained from the three‐component PSPI. © 2007 Wiley Periodicals, Inc. J Appl Polym Sci, 2008     

LB技术制备大面积超薄PMMA抗蚀层的研究

采用自行研制的ＬＢ自动提膜装置，制备出大面积（１０×８ｃｍ２）、高质量的ＰＭＭＡ超薄抗蚀剂膜，并将其用于高分辨率铬掩模版的研制。通过电子束曝光，湿法蚀刻，制作了分辨率优于０．５μｍ，特征线宽０．３８μｍ的４（１００ｍｍ）铬掩模版。     

热场致发射电子源曝光系统的技术现状和应用前景

高亮度、长寿命的热场致发射(Thermal field emitter)阴极自七十年代中期已受到人们的关注和重视,历经十多年在理论分析、工艺制备和实验研究上做了大量工作之后,于1988年在电子束曝光机上的应用中取得了突破性进展。用晶向为(100)的钨和具有低逸出功的锆制成的(Zr/O/W)热场致发射阴极在四千小时的使用寿命下亮度值超过六硼化镧阴极一个数量级以上,最近的实验结果表明:在工件台上小束斑下能得到接近两千安培每平方厘米的束流密度,而且四十小时内束流稳定度接近千分之一。显然,这几个表征曝光系统综合技术性能的重要指标,说明多年困扰于各种电子束曝光系统(特别是高斯圆斑电子束系统)在高分辨率情况下生产率较低的技术难题已经得到了比较圆满的解决。 八十年代末期,当热场致发射电子源曝光系统的技术关键解决后,这项技术就成为技术发达国家,特别是美国和日本,在电子束曝光领域进行技术竞争的热点;九一年五月底在美国召开的国际三束会议上有关场致发射阴极和MEBES—4型机已经采用TFE的最新报道充分证实了这项技术在电子束曝光技术应用中的重要地位和发展潜力。