宝浪油田侏罗系三工河组浅水辫状河三角洲沉积模式研究

焉耆盆地侏罗系三工河组广泛发育由辫状河进积到湖泊中形成的辫状河三角洲。这种三角洲特征显著不同于其它三角洲,其主体是辫状分流河道和水下分流河道。宝浪油田含油层段主体为辫状分流河道,以心滩发育为主要特征,是典型的浅水缓坡粗粒辫状河三角洲沉积。     

Bandpass filters using periodically loaded combline resonators

A novel combline filter is proposed for cellular‐radio base stations. The Q‐factor is significantly improved. The eigenvalue equation is expressed with the single‐team approximation in the gap region of the combline resonator. A two‐pole combline filter is designed. The calculation, simulation, and experiment results are presented and are in good agreement. © 2005 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2006.     

中国学术期刊网燕化镜像站点建设

通过中国学术期刊网燕化镜像站点的建设，介绍了燕山石化镜像站点的配置及主要管理功能和对全文数据库的检索，浏览功能，同时介绍了新形势下，信息化建设的新观念，新思路，以及强化信息意识，加强信息服务产业化发展的重要性和迫切性。     

一种有效的四步施训模式

介绍一种在企业管理干部培训实施中的四步操作模式。通过对该模式整体思路和四个步骤操作要点的阐释,说明在对企业管理干部的培训实施过程中如何将学员的学习特征与现代培训理念、培训元素进行有机的结合,使培训效果真正落实到提高学员的能力上,以使其工作得到改善。     

界面流法计算反应堆六角形燃料组件中子通量密度分布

利用界面流法计算两维六角形轻水堆燃料组件中子通量密度分布。子区内中子源在空间上采用二次分布近似，还考虑了六角形组件周边水隙对组件内中子通量密度的影响。根据提出的模型，编制了TPHEX－E程序，并对一些轻水堆六角形组件问题作了计算，计算结果与蒙特卡罗方法计算结果进行了比较，符合良好。本程序可用于六角形轻水堆燃料组件计算。     

基于BOOSt结构下不连续导电模式的PFC电路

采用现代高频功率变换技术的有源功率因数校正（Power Factor Corrector,PFC)技术是解决高频开关变换器谐波污染的有效手段。与传统的PFC电路相比，有源PFC电路的输入电流接近正弦波且与输与电压同相位，能有效抑制电流波形畸变和谐波，因此避免了对同一电网设施的干扰。在PFC电路中，Boost变换器是研究和应用得最多的一种变换器。本文着重分析了Boost电路在不连续导电模式状态下，PFC电路的临界条件，对实际电路结构的设计有很好的指导意义。     

微型计算机的接触电流和接地线电流的测量

介绍了微型计算机的两种不同类型的泄漏电流的危害及其测量方法。     

Effects of hot-carrier stress on high performance polycrystalline silicon thin film transistor with a single perpendicular grain boundary

This paper is a report on the effect of a single perpendicular grain boundary on the hot-carrier and high current stability in high performance polycrystalline silicon (poly-Si) thin film transistors (TFTs). Under a hot carrier stress condition (Vg = Vth + 1 V, Vd = 12 V), the poly-Si TFT with a single grain boundary is superior to the poly-Si without any grain boundary because of the smaller free carriers available for electric conduction. The shift of transconductance in poly-Si TFT with a single grain boundary is less than 5% after hot carrier stress during a period of 1000 s. The shift of transconductance is about 25% in the case of the poly-Si TFTs without a grain boundary in the channel. On high current stress, the poly-Si TFT without the grain boundary is less degraded than the poly-Si TFT with the grain boundary because the concentrated electric field near the drain junction is lower.     

Modeling and Analysis of a Long Thin Conducting Stripline

A long thin conducting stripline embedded in a dielectric and centered between two large conducting plates, i.e., the stripline environment, is considered. The stripline is modeled as infinitely long, infinitely thin, and perfectly conducting by first considering a stripline of finite length, thickness, and conductivity in a dielectric layer. Starting from Maxwell's equations and assuming that the current on the stripline is a propagating wave in length direction, asymptotic expressions for the fields inside and in the neighbourhood of the stripline are deduced. These expressions are used to model the stripline in the stripline environment, which leads to a boundary-value problem for the electric potential. This problem is solved by two different approaches, leading to integral equations for the current and for an auxiliary function describing the electric potential. A relation between the current and the auxiliary function is deduced, which is used to obtain asymptotic expressions for current and impedance. Results are compared with a numerical solution of the integral equation for the current and with results in literature.