Studies on the dielectric and relaxor behavior of sol-gel derived barium strontium zirconate titanate thin films

The dielectric behavior of sol-gel derived Ba_0.80Sr_0.20(Zr_xTi_1−x)O₃ (0.0 ≤ x ≤ 0.50) thin films is studied. A relaxor behavior is observed for x ≥ 0.35. The degree of relaxation increases with Zr content. The frequency dependence of the polar regions follows Vogel-Fulcher relation with a characteristic cooperative freezing at freezing temperature (T_f). Below T_f, a long range polarization ordering is likely to take place. The plausible mechanism of the relaxor behavior of BSZT thin films with Zr contents ≥ 0.35 has been proposed based on the measured temperature as well as frequency dependent dielectric data. The solid solution system is visualized as a mixture of Ti^+ 4 rich polar regions and Zr^+ 4 rich regions; with the increase in Zr content the volume fraction of the polar regions is progressively reduced. At and above 35.0 at.% Zr substitution the polar regions exhibit typical relaxor behavior.     

Epitaxial growth of GaN on (0001) Al<Subscript>2</Subscript>O<Subscript>3</Subscript> via solution-cast seed layer formation process using Ga(mDTC)<Subscript>3</Subscript>

This paper reports an alternative method for the growth of GaN epitaxial layer on (0001) Al₂O₃ substrate by hot-wall vapor phase epitaxy technique. Tris (N,N-dimethyldithiocarbamato)-gallium (III), Ga(mDTC)₃ was introduced as a precursor material for the seed layer formation in the growth of GaN. Optimal growth conditions with seed layers formed by the Ga(mDTC)₃ concentration of 0.047 mol/L were identified: Growth temperature was found to be 850 °C, and optimal distance between the reactant outlet and substrate was determined to be 12.5 cm. Characterization results showed that this growth method produce high-crystallinity GaN epitaxial layers at a relatively lower growth temperature compared to the existing growth techniques and simplify the growth process.     

Reward optimization of a repairable system

This paper analyzes a system subject to repairable and non-repairable failures. Non-repairable failures lead to replacement of the system. Repairable failures, first lead to repair but they lead to replacement after a fixed number of repairs. Operating and repair times follow phase type distributions (PH-distributions) and the pattern of the operating times is modelled by a geometric process. In this context, the problem is to find the optimal number of repairs, which maximizes the long-run average reward per unit time. To this end, the optimal number is determined and it is obtained by efficient numerical procedures.     

低噪声晶振16次倍频源

本文介绍了低噪声高次倍频器的设计原理及低相位噪声晶振１６次倍频信号源。     

粒界缓冲型展宽效应对PTC材料温度系数的影响

本文利用相变扩张理论分析了粒界缓冲型展宽效应对BaTiO_3系PTC陶瓷的介电系数及温度系数a_r的影响,指出了晶粒尺寸和温度系数的关系。     

一种新颖的跳频振荡器

摘要本文综合考虑到频率合成技术及单端口体波谐振器HBAR的特点提出了一种基于一阶非线性PLL的锁相频率合成方案。文中对这种跳频方案的原理、性能特点作了详细论述、并通过实验、从不同角度对本方案进行了说明、同时对整机的各项指标作了详尽测试:在HBAR无载Q_N值为4000的情况下,该多模跳频振荡源的捷变范围为770MHz—840MHz、捷变时间小于20μS。杂散分量低于—60dB、二次谐波分量低于—34dB。离散捷变频率点为16点,构成闭环跳频系统后,对开环VCO的短稳改善了三个量级:从1.3×10~(-5)/ms到1.6×10~(-8)/ms及9.56×~(-7)/s到1.69×!0~(-9)/s,尤为重要的是该多模跳频振荡源达到此性能所需的硬件量很小,因此在对体积要求苛刻的场合、此种跳频方案具有极强的竞争力。     

Shock-induced phase transition of oriented pyrolytic graphite to diamond at pressures up to 15 GPa

In studies of shock-induced phase transition of ordered pyrolytic graphite to a diamond-like phase, the lowest transition onset pressure was observed at 19.6 GPa. The phase transition in that case was considered to be martensitic. In the present study ordered pyrolytic graphite with voids between particles was loaded at pressures up to 15 GPa using a planar shock wave propagating along the basal plane of the graphitic crystal structure. As a result, both diamond-like carbon and diamond were observed in the postshock sample. The phase transition of graphite to diamond was assumed to occur by the release of distortional energy stored in the graphite particles, that is, diffusional-controlled reconstructive mechanism, on the basis of the data by high resolution electron microscopy together with electron energy loss spectroscopy.     

全息光学元件中编码与象质和衍射效率的关系

以平面波束变换为十字光束的全息光学元件为例，详细分析了ＨＯＥ的相位调制、编码与解主财过程，推导出ＨＯＥ的衍射效率近似解的表达式，计算出近似条件下最佳编码最大刻蚀深度值，并且对该编码方案对ＨＯＥ成象质量的影响进行了分析，得出了分析的结果和结论，同时对衍射效率近似解表达式的误差进行了研究，并给出了分析结果。     

InGaAsP／InP PFBH激光器

采用Ｎ－ＩｎＰ衬底研制ＩｎＧａＡｓＰ／ＩｎＰ激光器和ＤＦＢ激光器在国内已报导过多次，本文介绍用Ｐ－ＩｎＰ衬底研制ＩｎＧａＡｓＰ／ＩｎＰ平面埋层异质结构激光器和ＤＦＢ－ＰＦＢＨ激光器，同时利用晶体生长和晶向的依赖关系，改进埋区的结构，使器件最高激射温度大于１００℃。     

Equilibrium distribution of water in the two-phase system supercritical carbon dioxide–textile

When natural fibres are dyed in supercritical carbon dioxide, the addition of a small amount of water increases coloration. For a process design it is important to know how much water has to be added to obtain a desired humidity of both textile and carbon dioxide. In this work a thermodynamic model is proposed to calculate the distribution of water over the textile phase and the supercritical phase as a function of pressure and temperature. The phase equilibrium is described with Raoult's law for non-ideal fluids. The absorbed water in the textile is a condensed phase and is modelled here as a non-ideal liquid, using the NRTL-equation. The non-ideality of the supercritical phase is described by a solubility enhancement factor, a new equation derived from statistical thermodynamics. Although the model is applied to cotton, viscose, silk and wool, it can be used for all water absorbing textiles.