Sputter deposition technology as a materials engineering

Sputter deposition is currently being widely used in the microelectronics industry for the production of silicon integrated circuits. Recently interest has been focused on sputter deposition as a new materials processing technique. The highly energetic sputtered atoms enhance crystal growth and/or sintering during film growth. This results in lowering of the growth temperature of high temperature materials including cubic diamonds. Single crystals of complex ceramics materials could be prepared by sputter deposition through epitaxial growth process. Atomically controlled deposition using multi-target sputter enables to make man-made superlattice including high-T _C superconductors of layered perovskite. At present sputter deposition is one of key materials technologies for the coming century.     

Growth of HgSe and Hg1−xCdxSe thin films by molecular beam epitaxy

Thin epitaxial films of HgSe and Hg_1−xCd_xSe (x≤0.34) were successfully grown for the first time by molecular beam epitaxy. Film growth parameters are discussed, and results of structural, electrical, and optical studies are reported.     

低银医用X光胶片的研制

对几种增黑剂进行了筛选实验研究，选用了两种增黑剂组合使用，提高了遮盖力，使医用Ｘ光胶片涂布银量由原业的９ｇ／ｍ２降到了６．８ｇ／ｍ２，与美国医用Ｘ光胶片涂布银量（６．７ｇ／ｍ２）相当，照相性能不低于国产医用Ｘ光胶片。     

聚乙烯包装薄膜形变性能与微观结构的研究

采用拉伸实验，研究形变速率对聚乙烯包装薄膜力学性能的影响。采用Ｘ射线衍射方法，分析聚乙烯薄膜形变后微观结构的变化，得到了形变后材料内部的微晶尺寸和点阵畸变值。     

Growth and characterization of hot-wall epitaxial CdTe on (111) HgCdTe and CdZnTe substrates

Thin CdTe films were deposited by hot-wall epitaxy (HWE) on (111) HgCdTe and CdZnTe substrates at temperatures from about 140 to 335°C. X-ray rocking curves were used to show that crystal quality of the CdTe (111)B films improved as substrate temperature increased from 140 to about 250°C. Rocking curve values for full width at half maximum (FWHM) decreased from 2–4 degrees at 140–150°C to less than 100 arc-s at 250°C, and a FWHM of 59 arc-s was the lowest value observed near 250°C. The FWHM of the HWE CdTe was found to be insensitive to growth rate below about 400Å/min, but increased to four degrees at 1250Å/min. X-ray diffraction confirmed that films grown on the B-face at higher temperatures were epitaxial, but contained a significant volume fraction, 35% to 50%, of rotational in-plane twins. Electron microscopy confirmed a coarse twin density, and photoluminescence spectra showed an absence of excitonic emission in the HWE films. Simultaneous growth on two (111) HgCdTe substrates with different surface polarities between 230°C and 335°C showed that deposition rate on the A-face decreased relative to that on the B-face as temperature increased. Films grown on the B-face exhibited better surface morphologies than those grown on the A-face.     

Effect of rare-earth doping on the electrical and photoelectrical properties of furazano [ 3,4-b] piperazine (FP) thin-film devices

Schottky diodes of rare-earth, praseodymium (Pr)-doped and samarium (Sm)-doped furazano [3,4-b] piperazine (FP), sandwiched between Al and indium-tin oxide (ITO) were made by a spin-coating technique. The diodes, in which doped FP behaves as a p-type organic semiconductor, exhibit rectification behaviour. The p-type semiconductivity and rectification properties of the devices improve with rare-earth doping. The electrical effects observed in these devices are explained in terms of the p-type semiconducting behaviour of the doped FP thin films and the formation of a blocking contact (Schottky barrier) with the Al electrode and ohmic contact with the ITO electrode. Various electrical parameters such as carrier mobility, position of Fermi level, free carrier concentration, trap density, trap level and conductivity of doped FP are calculated and discussed. It is found that the position of the Fermi level shifts toward the valence band on rare-earth doping; concentration of free carriers and carrier mobility increase on doping. From the capacitance-voltage (C-V measurements, various electrical parameters such as barrier height, density of ionized acceptor atoms and depletion layer width are calculated and discussed. From the action spectra and absorption spectra it is confirmed that the Al-doped FP interface forms a Schottky barrier and the ITO-doped FP interface shows ohmic contact. The photovoltaic measurement on the two devices reveals that the short circuit current, open circuit voltage, fill factor and power conversion efficiency increase on rare-earth doping.     

水包油型多彩涂料的生产及施工

介绍了水包油型多彩涂料的组成、各组份的作用、生产工艺路线和工艺参数的选择。对多彩涂料的施工机具和方法作了简单介绍。     

空气中烧成的镍导体及其应用

将空气中烧成的镍导体用于散热制冷片制作工艺中，可降低成本，提高合格率。通过实验得到的最佳值为：镍导体中４号玻璃（ＳｉＯ２＞３０，Ｂ２Ｏ３＞１０，ＰｂＯ＜５５，ＴｉＯ２少许）的含量４．５％，化学镀镍时间５０ｍｉｎ，方阻４７．５ｍΩ／□，附着力８．１Ｎ／ｍｍ２。     

油酸乙二醇单酯在基础油与水界面上形成吸附膜的研究

以油酸和乙二醇为原料，在酸性催化剂作用下，用硼酸间接酯化法合成了润滑油油性油酸乙二醇单酯，用界面张力仪测定了单酯含量的矿物油的界面张力。用量小二乘法求得油中油酸乙二醇单脂的浓度与油对水界面张力关系的回归方程。依据所求的回归方程和Ｇｉｂｂｓ公式计算出油酸乙二醇单脂在油与水界面上形成吸附膜时的最低浓度。