High quality gate dielectrics formed by rapid thermal chemical vapor deposition of silane and nitrous oxide

In the present study, we have performed electrical characterization of oxides deposited via rapid thermal chemical vapor deposition using SiH₄ and N₂O. We have investigated the effect of temperature, pressure, and SiH₄ to N₂O ratio on the electrical and material properties of as-deposited films. We have found that as-deposited oxides deposited at low temperatures, low pressures, and with a low silane to nitrous oxide ratio of ～0.5% give good material and electrical properties. The as-deposited films are stoichiometric in nature and have high deposition rates. As-deposited films had very low D_it values, high breakdown fields, and excellent subthreshold swing. The leakage currents and metal oxide semiconductor field effect transistor current drive, although lower than thermal oxides, were found to be quite acceptable. We have also investigated the thickness dependence of the films and found that as the film thickness is reduced below 50Å, the reliability improves for all oxides including the silicon-rich deposited oxides.     

Nitrogen dioxide effect in the reduction of nitric oxide by propane in oxidizing atmosphere

The role of nitrogen dioxide in the selective reduction of NO by propane over a Cu-MFI zeolite is investigated. NO₂ and NO reductions were carried out under similar conditions of reaction. In the presence of oxygen, the reduction of NO by C₃H₈ does not differ significantly from that of NO₂. In the absence of oxygen, the reduction of NO₂ by propane occurs with a partial decomposition of the nitric dioxide molecule. Such a decomposition leads to the formation of oxygen, which is responsible for the increase in catalytic activity by comparison with the same reaction performed with NO. NO₂ formed and released in the gas phase during the reduction of NO by propane in the presence of oxygen does not play a predominant role in the catalytic process.     

Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O

Oxygen doped GaN has been grown by metalorganic chemical vapor deposition using N₂O as oxygen dopant source. The layers were deposited on 2″ sapphire substrates from trimethylgallium and especially dried ammonia using nitrogen (N₂) as carrier gas. Prior to the growth of the films, an AIN nucleation layer with a thickness of about 300? was grown using trimethylaluminum. The films were deposited at 1085°C at a growth rate of 1.0 μm/h and showed a specular, mirrorlike surface. Not intentionally doped layers have high resistivity (>20 kW/square). The gas phase concentration of the N₂O was varied between 25 and 400 ppm with respect to the total gas volume. The doped layers were n-type with carrier concentrations in the range of 4×10¹⁶ cm⁻³ to 4×10¹⁸ cm⁻³ as measured by Hall effect. The observed carrier concentration increased with increasing N₂O concentration. Low temperature photoluminescence experiments performed on the doped layers revealed besides free A and B exciton emission an exciton bound to a shallow donor. With increasing N₂O concentration in the gas phase, the intensity of the donor bound exciton increased relative to that of the free excitons. These observations indicate that oxygen behaves as a shallow donor in GaN. This interpretation is supported by covalent radius and electronegativity arguments.     

低伤害N2增能水基压裂液在大牛地气田的应用

针对大牛地气田低孔低渗、地层能量低的特点,研究了全程拌氮水基瓜胶压裂液体系。压裂液性能评价表明,该压裂液具有滤失小、流变性好、配伍性好、易返排、对岩心基质渗透率损害低的特点,现场推广应用取得了良好的效果。     

Equilibrium Studies of the System'(Fe,Co)O'–(Fe,Co)3O4 by Solid-State emf Measurements in the Temperature Range 970 to 1370 K

The equilibrium reaction 3'(Fe, Co)O'( ss ) +1/2O₂ ( g ) ⇄ (Fe, Co)₃O₄( ss ) was studied in the temperature range 970 to 1370 K for seven different total compositions of molar ratios 0.5 < Fe/(Fe + Co) ≤ 1.0. The equilibrium pressures of oxygen were determined by using galvanic cells incorporating calcia stabilized zirconia as solid electrolyte and the Fe/Co ratios in the solid-solution phases by wavelength dispersive spectrometry microprobe analyses. The activities of 'FeO' in the cobaltowüstite phase were then derived from the experimental results obtained.     

Microwave-Assisted Synthesis of Fine Particle Oxides Employing Wet Redox Mixtures

Interaction of electromagnetic radiation with a physical mixture of metal nitrates and amides/hydrazides is observed to initiate high-temperature reactions, useful for realizing several high-temperature ceramic materials. A judicious choice of such redox mixtures undergoes exothermic reactions when they couple with microwave radiation. The coupling of electromagnetic radiation with metal salts and amides/hydrazides depends on the dielectric properties of the individual components in the reaction mixture. The approach has been used to prepare γ-Fe₂O₃, Fe₃O₄, MgCr₂O₄, α-CaCr₂O₄, and La_0.7Ba_0.3MnO₃.     

Electrical and optical properties of MoO3-V2O5 mixed oxide films

Vacuum deposited MoO₃-V₂O₅ films of different molar concentrations have been used for DC electrical conductivity studies at different temperatures. The optical absorption spectra of MoO₃-V₂O₅ films of different molar concentrations have been measured. From these measurements it is found that optical band gap and activation energy vary with molar concentration of MoO₃-V₂O₅ films.     

Pitting corrosion of Cr–Mn–N steel in sulphuric acid media

The resistance to pitting corrosion of austenitic stainless steel Cr18Mn12N has been studied in model solutions of sulphuric acid (0.5 m) containing chloride ions (0.5 m). The cyclic potentiodynamic method has been employed to investigate the effects of chloride ions and agitation rate on the pitting and repassivation potentials. Electron and optical microscopy, electron diffraction spectroscopy and atomic absorption spectrometry have been used to detect the surface sites for pit formation and the growth of pit nuclei. The results obtained with chromium–manganese–nitrogen steel have been compared with those of austenitic Cr18Ni9 stainless steel. A similarity in pit initiation is established, while steel composition exhibits no significant effect. Cr18Mn12N steel is less prone to repassivation as compared with Cr18Ni9 steel.     

碱土金属氧化物催化氧化异丙苯反应研究

考察了碱土金属氧化物CaO、MgO和SrO在催化氧化异丙苯合成过氧化氢异丙苯 (CHP)反应中的性能。3种催化剂的活性顺序为 :CaO >MgO >SrO。采用Hammett指示剂分别表征了碱土金属氧化物的碱强度。碱强度H-=15 0～ 18 4的碱性中心有利于异丙苯过氧化合成CHP反应。采用红外光谱分析了异丙苯在MgO、CaO催化剂表面的吸附态。异丙苯通过异丙基叔碳原子上的氢原子与CaO催化剂表面碱中心发生化学吸附 ,弱化了异丙基叔碳原子上的C—H键 ,从而有利于催化异丙苯氧化合成CHP的反应。MgO与异丙苯的异丙基叔碳上的氢原子的相互作用弱于CaO与异丙苯的异丙基叔碳上的氢原子的相互作用 ,使MgO催化异丙苯氧化的反应活性低于CaO催化异丙苯氧化的反应活性