Towards implementation of a nickel silicide process for CMOS technologies

In this paper, we review some of the advantages and disadvantages of nickel silicide as a material for the electrical contacts to the source, drain and gate of current and future CMOS devices. We first present some of the limitations imposed on the current cobalt silicide process because of the constant scaling, of the introduction of new substrate geometries (i.e. thin silicon on insulator) and of the modifications to the substrate material (i.e. SiGe). We then discuss the advantages of NiSi and for each of the CoSi₂ limitations, we point out why Ni is believed to be superior from the point of view of material properties, miscibility of phases and formation mechanisms. Discussion follows on the expected limitations of NiSi and some of the possible solutions to palliate these limitations.     

机械合金化Fe-Ni粉末的相结构

使用XRD和Moessbauer等方法，研究了在Ar气氛下机械合金化Fe—Ni粉末相结构的变化．结果表明，在机械合金化Fe64-Ni36粉末过程中，fcc相的数量随着球磨时间的增加先增加然后减少，与加乙醇球磨Fe64-Ni36的情形相同．当Ni的含量(原子分数)大于50％时，有fcc相、顺磁相和FeNi3形成，当Ni的含量低于50％时，bcc相的数量随着Ni含量减少而增加．Moessbauer谱的结果表明，因球磨时间或Fe、Ni比例的不同，Fe—Ni球磨粉末固溶体具有不同结构的原子配比。     

过冷包晶合金的相选择分析

分析了过冷包晶铁基合金、铜基合金、稀土超导乳化物、稀土木磁化合物非平衡凝固过程中的相选择现象。根据对实验结果的分析，对过冷包晶合金凝固的相选择进行了分类。探讨了过冷包晶合金凝固今后的研究方向和应用前景。     

带通采样在数据采集中的应用研究

在数据采集中采用带通采样，可大大降低采样率，但系统中的抗混叠滤波器会造成相位的非线性。采用对滤波后的信号进行带通采样，然后再用FRR滤波器校正相位的非线性，从而不失真地还原原信号，最后在Matlab中进行仿真，验证了该方法的有效性。     

Thermodynamic and Transport Properties of Liquid HFC-227ea

The thermal conductivity and heat capacity of liquid 1,1,1,2,3,3,3-hepta-fluoropropane (HFC-227ea) have been studied by a high-frequency thermal-wave method over the temperature range of 294 to 345 K at pressures up to 2.8 MPa. The purity of the samples used throughout the measurements is 99.99 mol%. The experimental uncertainties of the thermal conductivity and heat capacity measurements were estimated to be within ±1.5 and ±2%, respectively. The thermal conductivity of HFC-227ea in the liquid phase decreases as temperature increases, while the pressure has an opposite effect.     

Phase behavior,density, and crystallization of polyethylene in n‐pentane and in n‐pentane/CO2 at high pressures

The phase behavior and volumetric properties of polyethylene (PE) in solutions of n‐pentane and n‐pentane/CO₂ were studied in a temperature (T) range of 370–440 K at pressures up to 60 MPa. Measurements were conducted with a variable‐volume view‐cell system equipped with optical sensors to monitor the changes in the transmitted light intensity as the P or the T of the system was changed. Lower‐critical‐solution‐temperature‐type behavior was observed for all of the liquid–liquid (L–L) phase boundaries, which shifted to higher pressures in solutions containing CO₂. The solid–fluid (S–F) phase boundaries were investigated over a P range of 8–54 MPa and took place in a narrow T range, from 374 to 378 K in this P interval. The S–F phase boundary showed a unique feature in that the demixing temperatures showed both increasing and decreasing trends with P depending on the P range. This was observed in both the PE/n‐pentane and PE/n‐pentane/CO₂ mixtures. The density of these solutions were measured as a function of P at selected temperatures or as a function of T at selected pressures that corresponded to the paths followed in approaching the phase boundaries (S–F or L–L) starting from a homogeneous one‐phase condition. The data showed a smooth variation of the overall mixture density along these paths. © 2003 Wiley Periodicals, Inc. J Appl Polym Sci 89: 2201–2209, 2003     

V波段小型化低相噪频率综合器

本文研究了一种V波段超小型低相噪频率综合器,研制了L段捷变频频综、Ku波段取样锁相源、上变频组件、倍频器等四个小型化组件.为了得到较低的相位噪声和捷变频速度,本捷变频频综采用上变频-倍频方案,其中DRO PLS保证低相位噪声性能,L波段捷变频频综保证捷变频功能.该频综尺寸为100×80×30mm³,相位噪声低于-86dBc/Hz(1kHz),捷变频时间小于40μs,杂波抑制优于-60dBc.     

两相异步电动机变频调速装置

主要讨论对称两相变频器主电路的结构以及介绍一种简单实用的磁链轨迹控制技术．     

油气微运移的烃类相态

微运移机制是目前油气化探等非地震直接找油的理论基础,只有研究清楚油气微运移的相态,才可能进一步研究微运移的机制;含油气水相是油气发生微运移最普遍和优先起作用的相态;在特定的地质条件下,不排除油气以其它相态发生渗漏的可能。     

Interfacial reactions in In-Sn/Ni couples and phase equilibria of the In-Sn-Ni system

The In-Sn-Ni alloys of various compositions were prepared and annealed at 160°C and 240°C. No ternary compounds were found; however, most of the binary compounds had extensive ternary solubility. There was a continuous solid solution between the Ni₃Sn phase and Ni₃In phase. The Sn-In/Ni couples, made of Sn-In alloys with various compositions, were reacted at 160°C and 240°C and formed only one compound for all the Sn-In alloys/Ni couples reacted up to 8 h. At 240°C, Ni₂₈In₇₂ phase formed in the couples made with pure indium, In-10at.%Sn and In-11at.%Sn alloys, while Ni₃Sn₄ phase formed in the couples made of alloys with compositions varied from pure Sn to In-12at.%Sn. At 160°C, except in the In/Ni couple, Ni₃Sn₄ formed by interfacial reaction.