谈喷印机喷印工艺与油墨性能的关系

喷印机的喷印过程中,喷印质量直接受油墨性能和喷印工艺参数的影响。本文从喷印机的实用性出发,主要分析探讨了在保证喷印质量的情况下喷印工艺参数的设定与油墨性能的相互关系,并对喷印工艺参数的设定和油墨的使用提出了一些量化指标,为使用者在选择油墨及对油墨性能进行调整和改善提供一定的参考依据,对喷印机的实际应用也有着一定的指导意义。     

Gold‐Nanoparticle‐Doped TiO2 Semiconductor Thin Films: Optical Characterization

A simple procedure for creating titania sol–gel‐based semiconductor thin films is described. Gold nanoparticles are doped homogeneously into the precursor mixture and the particles are homogeneously distributed in the resultant films when prepared using spin‐coating. The effects of particle loading and annealing temperature on the optical properties of the resultant films are characterized. Ellipsometry, X‐ray diffraction, atomic force microscopy, and surface plasmon spectroscopy are used to monitor the crystallization and porosity changes during film synthesis.     

Microdroplet and Atomic Force Microscopy Probe Assisted Formation of Acidic Thin Layers for Silicon Nanostructuring

In this work, an aqueous acidic thin‐layer‐based strategy for fabricating nanostructures on silicon by using atomic force microscopy (AFM) nanolithography is presented. The approach involves the formation of microscale droplets via dilute hydrofluoride (DHF) etching, the conversion of the droplets to acidic thin layers by AFM‐probe scanning, and subsequent lithographic operations using a biased probe in the aqueous layers. By varying the concentration of the acidic DHF layers, the thin layers can facilitate the creation of both positive and negative patterns, such as oxide dots and Si pores, through anodic oxidation and dissolution. In particular, the anodic oxidation in the acidic media is associated with the field‐enhanced nonequilibrium dissociation of the weak electrolyte. The Si pore structure formation is related to the field‐assisted dissolution of anodic oxides and the Si substrate. The acidic‐layer‐based technique allows switching between different lithographic modes by changing the acidity of the DHF layers, and is complementary to bulk solution‐based and local meniscus‐based approaches in AFM nanolithography. In principle, this method can also be extended to other materials that have similar reactions with DHF.     

Electrical and surface composition properties of phosphorus implantation in Mg-doped GaN

Changes in electrical as well as surface composition such as chemical and electronic properties of Mg-doped p-type GaN by phosphorus implanting are systematically investigated using Hall effect and X-ray photoelectron spectroscopy (XPS) measurements. It is shown that p-type conductivity of Mg-doped GaN can be improved by implanting P atoms after a proper post-implantation annealing treatment, probably due to the reduction of self-compensation by P atoms substitution on N vacancy sites. XPS analysis is further found that the decrease of surface oxides and the shift of the surface Fermi level toward the valence band edge through P atoms introduced. These experimental results indicate that the P implantation is an effective method to improve p-type conductivity of Mg-doped GaN and reducing the surface barrier height, which can lead to a lower metal contact resistivity to p-type GaN.     

石墨烯动态调控太赫兹表面等离激元

太赫兹表面等离激元(SPPs)是利用亚波长周期性结构在太赫兹频段模拟的具有与可见光频段表面等离激元相似的光学特性的电磁波,分为传输型和局域型2种。本文将石墨烯引入太赫兹表面等离激元结构作为动态激励源,通过外加偏压改变石墨烯的电导率,分别实现了对传输型表面等离激元的幅度、频率、相位和对局域表面等离激元共振强度的动态调控。本文方法为表面等离激元的动态调控提供了新的思路,拓宽了表面等离激元在太赫兹频段的应用。     

引入模块化概念的贴装设备

向模块化组装生产线方向发展正获得愈来愈多人们的关注。一条由多种“高速模块”所组成的生产线具有许多优点,将对现有的装配厂商具有很大的诱惑力。由高速柔性化贴装设备所组成的组装生产线可以超越传统的芯片射手和微细间距贴装设备。     

强光离子渗金属

随着表面工程技术的发展,各种表面涂覆方法不断出现,我们研制的强光离子渗金属,已在耐磨,耐腐蚀,元器件软件焊性方面做了应用实验,取得了良好的效果。本文就其装置及放电特性等方面进行阐述。     

圆型厚屏频率选择表面的特性研究

相对于薄屏频率选择表面而言,厚屏频率选择表面可以通过高精度机械加工手段直接利用金属屏获得,加工方法简单。同时,厚屏频率选择表面具有更高的Q 值和较少的介质匹配问题。在设计了一种圆形厚屏频率选择表面的基础上,通过时域有限差分法进行了数值仿真,研究了单元尺寸、单元周期和屏厚度等参数对其传输特性的影响,并通过机械加工方法进行了样件的微波暗室测试对比。结果表明:随着单元周期和屏厚度的增加,工作带宽和中心频点降低;随着单元尺寸的增加,工作带宽增加,但中心频点降低。仿真结果与测试结果规律相一致。     

扫描隧道显微镜的新型实时图像处理系统

本文介绍了一种用于扫描隧道显微镜的实时图像处理系统。通过改变形态学运算，定义条件腐蚀、条件膨胀、开运算、闭运算、可滤除幅度大于特定值的噪声信息。选择适当的模板结构和门限阈值，这种改进的形态滤波器既保留了传统形态滤波器的优点，又克服了它的特点。     

AlGaAs／GaAs HBT表面效应的二维数值分析

采用表面效应集总模型综合考虑表面费米能级钉扎和表面复合效应，对ＡｌＧａＡｓ／ＧａＡｓＨＢＴ表面效应的影响进行了二维数值模拟。结果表明，表面态的存在对集电极电流几乎不产生影响，但显著增加基极电流，使得电流增益明显下降。同时还发现在台面结构ＡＩＧａＡｓ／ＧａＡｓＨＢＴ中外基区表面复合的集边效应，即外基区表面复合主要发生在发射极台面与外基区的交界处附近，与外基区长度基本无关。模拟还表明基区缓变结构可以减少表面复合，提高电流增益。