治理油井套管穿孔技术的探讨1

通过油井套管穿孔实例对其穿孔种类和原因进行了较为全面的分析，同时提出了预防治理的具体措施。     

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本文介绍了新型降粘剂LGV在钻井液中的降粘能力,初探了LGV的作用机理。此研究对于开发高效、价廉、无污染的木质素类钻井液处理剂具有一定的意义。     

在重点瓦斯采面应用高位钻孔抽放瓦斯

采用高位钻孔抽放瓦斯技术,可有效预防采面及上隅角瓦斯超限现象发生、确保重点瓦斯采面安全生产。     

对钻芯-回弹法检测数据处理的研究

钻芯-回弹法在工程检测中广泛应用且具有良好的发展前景,为了在工程实用中既能提高检测数据的可信度,又不过多增加工作量,本文运用统计学中t检验准则对钻取芯样强度进行筛选,运用误差传递原理对钻芯-回弹法修正理论加以完善,并结合工程实例进行说明并给出建议.对钻芯法检测结论的最终表达方式也提出了更为科学和完善的建议.     

Mechanisms of reduction in hole concentration in Al-doped 4H-SiC by electron irradiation

From the temperature dependence of the hole concentration in unirradiated lightly Al-doped 4H-SiC epilayers, an Al acceptor with E_V + 0.2 eV, which is an Al atom (Al_Si) at a Si sublattice site, and an unknown deep acceptor with E_V + 0.35 eV are found, where E_V is the top of the valence band. Both the densities are similar. With irradiation of 0.2 MeV electrons the Al acceptor density is reduced, while the unknown deep acceptor density is increased. Judging from the minimum electron energy required to displace a substitutional C atom (C_s) or the Al_Si, the bond between the Al_Si and its nearest neighbor C_s is broken due to the displacement of the C_s by this irradiation. Moreover, the displacement of the C_s results in the creation of a complex (Al_Si-V_C) of Al_Si and a carbon vacancy (V_C), indicating that the possible origin of the deep acceptor with E_V + 0.35 eV is Al_Si-V_C.     

坑道掘进施工钻爆指数相关模型及应用

以某国防工程钻爆指数为例 ,从快速制定合理钻爆方案、提高炮孔利用率的要求出发 ,探讨建立地下工程掘进施工钻爆指数相关模型的方法 ,并给出了该模型成功应用的一个实例     

DEEP LEVEL DEFECTS IN SI-IMPLANTED LEC UNDOPED Si-GaAs

The residual electrically active defects in(4×10~(12)cm~(-2)(30KeV)+5×10~(12)cm~(-2)(130KeV))si-implanted LEC undoped si-GaAs activated by two-step rapid thermal annealing(RTA)LABELED AS 970℃(9S)+750℃(12S)have been investigated with deep level transient spec-troscopy(DLTS).Two electron traps ET_1(E_c-0.53eV,σ_n=2.3×10~(-16)cm~2)and ET_2(E_c-0.81eV,σ_n=9.7×10(-13)cm~2)are detected.Furthermore,the noticeable variations of trap's con-centration and energy level in the forbidden gap with the depth profile of defects induced by ion im-plantation and RTA process have also been observed.The[As_i·V_(As)·As_(Ga)]and[V_(As)·As_i·V_(Ga)·As_(Ga)]are proposed to be the possible atomic configurations of ET_1 and ET_2,respectively to explaintheir RTA behaviors.     

SiO2 gate insulator defects,spatial distributions,densities, types,and sizes

Standard IC processes, as well as those involving the use of ionizing radiation, such as x-ray lithography etc., result in the generation of bulk defects, and interface states in the gate insulator, or underlying substrate, respectively, of insulated gate field effect transistors. Bulk defects are believed to be present as positively and negatively charged electron and hole traps, respectively, as well as neutral hole and “large” and “small” neutral electron traps. This paper provides a perspective of the current state of knowledge about the spatial distributions of large bulk defects, their areal densities, sizes, possible interrelationships among them, and the special cases of defects created by ion implanted silicon and oxygen, where knock-on effects have been simulated. It appears that bulk defects may all have their origin in neutral hole traps, (so-called E′ centers) and that when the insulator thickness is decreased to about 6-7 nm, defects are either no longer present, or, more likely, are incapable of trapping charge at room temperature because trapped carriers can either tunnel to one of the interfaces, or be annihilated by a reverse process. It appears possible also that the precursor of the several types of defects only forms at a “grown” silicon-silicon oxide interface. In theory, this would make it possible to grow defect free insulators by a combination of deposition and oxidation processes.     

双层套管井中声波波形分析

用柱状多层理论模型,计算了裸眼井、单层套管井、双层套管井中的声波波形。分别用地层纵波、横波和套管波信息,结合三种模型对双层套管井中不同条件下水泥胶结质量进行了详细分析。指出用内层套管波列和地层波列可定性判断两层套管之间的水泥胶结质量,用外层套管波列和地层波列能判断外层套管和地层之间的水泥胶结质量。结果表明,裸眼井和套管井的声波全波资料综合分析,能较好地评价水泥胶结质量。