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61.
树脂热解炭制备碳化硅晶须 总被引:6,自引:1,他引:5
用自制的配合醛树脂热解和炭源,用SIO2超细汾作原,根据碳热还原原理,利用常规加热和微波加热两种方式,分别制备了直径在纳米级的SiC晶须,X射线衍射、透射电检测结果表明:制备工艺和条件对SiC晶须的性质有较大的影响。 相似文献
62.
碳热还原法制备氮化硅粉体的反应过程分析 总被引:15,自引:0,他引:15
对以碳热还原法制备氮化硅粉体的SiO2-C-N2系统进行化学反应热力学和动力学的分析,从而发现在氮气氛不足的条件下,这一系统的反应产物将由氮化硅变为碳化硅;在氮气充足的情况下,随着温度的升高,生成物中碳化硅的量也会逐步增加,这一分析结果通过实验得到了验证。 相似文献
63.
F. Nava G. Wagner C. Lanzieri P. Vanni E. Vittone 《Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment》2003,510(3):273-280
The development of SiC minimum ionising particle (MIP) detectors imposes severe constrains in the electronic quality and the thickness of the material due to the relatively high value of the energy required to produce an electron–hole pair in this material by MIP against the value for Si. In this work, particle detectors were made using semiconductor epitaxial undoped n-type 4H-SiC as the detection medium. The thickness of the epilayer is on the order of 40 μm and the detectors are realised by the formation of a nickel silicide on the silicon surface of the epitaxial layer (Schottky contact) and of the ohmic contact on the back side of 4H-SiC substrate. The low doping concentration (6×1013 cm−3) of the epilayer allows the detector to be totally depleted at relatively low reverse voltages (100 V). We present experimental data on the charge collection properties by using 5.486 MeV -particles impinging on the Schottky contact. A 100% charge collection efficiency (CCE) is demonstrated for reverse voltages higher than the one needed to have a depletion region equal to the -particle extrapolated range in SiC. The diffusion contribution of the minority change carriers to CCE is pointed out. By comparing measured CCE values to the outcomes of drift–diffusion simulation, values are inferred for the hole lifetime within the neutral region of the charge carrier generation layer. 相似文献
64.
At high temperatures in clean oxidizing environments, SiC forms a very protective SiO2 film, but, in environments containing low levels of gaseous alkali salt contaminants or where condensed salts may deposit on the surface, the resistance of the film is significantly reduced. Oxidation kinetics of SiC were measured by continuous thermogravimetric analysis in a controlled environment containing CO2 , H2 O, and O2 plus low levels of potassium-containing salts. Potassium was found to be incorporated into the SiO2 scale and to significantly change its transport properties and its morphology. The rate of scale formation was found to increase directly in proportion to K in the scale. A change in mechanism was observed when water vapor was added to the reacting gas stream. 相似文献
65.
David C. Apperley Robin K. Harris Gregory L. Marshall Derek P. Thompson 《Journal of the American Ceramic Society》1991,74(4):777-782
The 29 Si MAS NMR spectra of the 2H, 4H, 6H, and 3C polytypes of silicon carbide are presented. An attempt is made to correlate differences in the chemical shifts with local atomic environment. The results of the analysis of the spectra of pure polytypes are used as a basic for the interpretation of the spectra of mixed polytypes and a discussion of the crystallinity and impurity levels of different samples. Carbon-13 chemical shifts obtained from spectra of the same polytypes are also tabulated. 相似文献
66.
Scott C. Thompson Anjali Pandit Nitin P. Padture Subra Suresh 《Journal of the American Ceramic Society》2002,85(8):2059-2064
The processing of stepwise graded Si3 N4 /SiC ceramics by pressureless co-sintering is described. Here, SiC (high elastic modulus, high thermal expansion coefficient) forms the substrate and Si3 N4 (low elastic modulus, low thermal expansion coefficient) forms the top contact surface, with a stepwise gradient in composition existing between the two over a depth of ∼1.7 mm. The resulting Si3 N4 contact surface is fine-grained and dense, and it contains only 2 vol% yttrium aluminum garnet (YAG) additive. This graded ceramic shows resistance to cone-crack formation under Hertzian indentation, which is attributed to a combined effect of the elastic-modulus gradient and the compressive thermal-expansion-mismatch residual stress present at the contact surface. The presence of the residual stress is corroborated and quantified using Vickers indentation tests. The graded ceramic also possesses wear properties that are significantly improved compared with dense, monolithic Si3 N4 containing 2 vol% YAG additive. The improved wear resistance is attributed solely to the large compressive stress present at the contact surface. A modification of the simple wear model by Lawn and co-workers is used to rationalize the wear results. Results from this work clearly show that the introduction of surface compressive residual stresses can significantly improve the wear resistance of polycrystalline ceramics, which may have important implications for the design of contact-damage-resistant ceramics. 相似文献
67.
Amiya S. Sanyal Joydeb Mukerji Siddhartha Bandyopadhyay 《Journal of the American Ceramic Society》1991,74(9):2312-2314
Mössbauer spectra of the products obtained by carbothermal reduction and distribution of silica in the presence of iron in the temperatures range 1200o to 1540o were studied. The preponderance of β- Si3 N4 over the α form at a higher reaction temperature were assumed to be related to the formation of an Fe-Si-N liquid. The liquid did not alter its composition with the variation of reduction-temprature, Iron had no effect on the reaction mechanism below 1300o C. 相似文献
68.
Thermal Shock Behavior of Porous Silicon Carbide Ceramics 总被引:1,自引:0,他引:1
Using the water-quenching technique, the thermal shock behavior of porous silicon carbide (SiC) ceramics was evaluated as a function of quenching temperature, quenching cycles, and specimen thickness. It is shown that the residual strength of the quenched specimens decreases gradually with increases in the quenching temperature and specimen thickness. Moreover, it was found that the fracture strength of the quenched specimens was not affected by the increase of quenching cycles. This suggests a potential advantage of porous SiC ceramics for cyclic thermal-shock applications. 相似文献
69.
The growth of carbide particles in TiC-XC-2 vol.% Ni and TiC-XC-30 vol.% Ni alloys, where X=Zr, Cr, W, Ta and Mo, was fitted
to an equation of the form d3-do
3=Kt. The grain growth behavior during liquid phase sintering at 1673K decreased markedly with the addition of Mo2C or WC, changed little for TaC, and increased with the addition of ZrC or Cr3C2. The grain contiguity decreased with increasing Ni content in the TiC−Mo2C−Ni alloy and was greater in the alloys with smaller growth rate constant. Consequently, the effect of carbide addition on
the grain growth of 2 vol.% Ni alloys was found to be similar to that of 30 vol.% Ni alloys. The grain growth mechanism could
be explained by the effect of contiguous carbide grain boundaries in restricting the overall grain growth, as well as the
area of the solid/liquid interfaces in the alloy by the usual solution/reprecipitation model. 相似文献
70.
Two kinds of SiC whiskers were annealed at temperatures similar to those for the processing of ceramic matrix composites. The morphology and structure of the as-received and postannealed whiskers were investigated by SEM, TEM, and XRD, and the influence of processing temperature on the mechanical properties of ceramic matrix composites was discussed. 相似文献