Doping manganese into CsPb(Cl/Br)3 quantum dots glasses: Dual-color emission and super thermal stability

CsPbX₃ (X = Cl, Br, I) perovskite quantum dots (QDs) represent bright and tunable photoluminescence, it is regrettable that the air instability and poor water resistant properties prevent their application in optoelectronic devices. At the same time, the toxicity of lead is also a major factor restricting its development. As a consequence, we demonstrate the partial replacement of Pb with Mn through conventional melt-quenching and heat-treatment method preparation of Mn-doped CsPb(Cl/Br)₃ QD glass. Mn-doped CsPb(Cl/Br)₃ QD glass exhibits high luminescent intensity like QDs. It is important that Mn-doped CsPb(Cl/Br)₃ QD glass with Dual-Color maintained the same lattice structure like Mn-doped CsPb(Cl/Br)₃ QDs, and highly homogeneous spectral characteristics of Mn luminescence. The intensity and position of this Mn-related emission are also tunable by altering the experimental parameters, such as the Pb-to-Mn feed ratio, annealing temperature. More importantly, the as-prepared orange Mn-doped CsPb(Cl/Br)₃ QD glass was employed to fabricate white LEDs combined with a commercial Ce³⁺:Y₃Al₅O₁₂ phosphor-in-glass (Ce-PiG) on top of a InGaN blue chip. And the constructed WLEDs generate a warm white with an optimal luminous efficacy (LE) of 67.00 lm/W, a high CRI of 81.4, and a low CCT of 4902 K.     

Concentration dependence of physical properties of low temperature processed ZnO quantum dots thin films on polyethylene terephthalate as potential electron transport material for perovskite solar cell

Colloidal Zinc oxide quantum dots (ZnO QDs) prepared with varying concentrations through precipitation method were deposited on flexible ITO/PET substrates using spin-coating technique. Various characterization tools were utilized to investigate the morphological, structural, electrical and optical properties of the films. The crystallinity of the films was found to improve with increasing ZnO QD concentration (ZQ_C) as evident from the X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) studies. Crystallographic and optical parameters were evaluated and explained in depth. The average nanograin size and bandgap were increased and decreased respectively, from ～5 nm to ～8 nm and 3.29 eV–3.24 eV with an increase in ZQ_C from 10 mg/mL to 70 mg/mL. Columnar structure growth of the films is revealed by AFM results. The films showed decent optical transparency up to 81%. All the ZnO films exhibited n-type semiconducting property as indicated by the electrical measurements with carrier mobility and low resistivity of 12.21–26.63 cm²/Vs and 11.84 × 10^?3 to 13.16 × 10^?3 Ω cm respectively. Based on the experimental findings, ZnO QD nanostructure film grown at 50 mg/mL is envisaged to be a potential candidate for flexible perovskite photovoltaic application.     

High color purity emission from quantum dots by optimizing the full width at half the maximum and optical density to blue light

In this paper, we got wide color gamut of quantum dot (QD) films by optimizing the spectra width and optical density (OD) of quantum dots. The specific methods to achieve the following: QD R: one layer of color filter R film was coated below the QD R layer. QD G: one layer of yellow‐green film was coated below the QD G film. By a structure optimal design, we got wide color gamut up to 99.2% BT2020 (equal to 132.86% NTSC) in Cd‐based QD and 93.6% BT2020 (equal to 125.35% NTSC) in Cd‐free QD. Furthermore, the gamut of QD display will continue to be improved by continuous refining the structure of QD display.     

PS/PMMA-CdSe/ZnS Quantum Dots Hybrid Nanofibers for VOCs Sensors

Hybrid nanofibers containing CdSe/ZnS quantum dots have been produced by electrospinning of hybrid latexes to characterize the electro-optical behavior of this novel luminescent sensing material. The latexes are synthesized by seeded semi-batch emulsion polymerization yielding cross-linked core-shell PS/QDs/PMMA particles with efficiently encapsulated quantum dots guaranteeing a good optical stability. Addition of polyvinyl alcohol (PVA) or polyethylene oxide (PEO) to the latexes is necessary to produce polymeric dispersions suitable for electrospinning manufacture of the nanometric fibers. The optimized polymeric dispersions are successfully electrospun obtaining fluorescent nanofibers in both cases. The hybrid nanofibers are sensitive to selected solvents (acetone, methanol and THF) and present positive response making them good candidates for the production of VOC sensors.     

基于径向基神经网络的声光偏转器控制模型研究

声光偏转是一种高速非机械光束方向控制技术,近年来在卫星光通信领域日益受到重视。运用径向基(RBF)神经网络模型实现声光偏转器光束方向控制,通过训练对RBF网络的权值和网络层元数等结构参数进行优化,调整得到理想模型。研究结果验证了该模型的可靠性与准确性。     

Emission of electrons from the ground and first excited states of self-organized InAs/GaAs quantum dot structures

Capacitance- and conductance-voltage studies have been carried out on Schottky barrier structures containing a sheet of self-organized InAs quantum dots. The dots are formed in GaAs n-type matrices after the deposition of four monolayers of InAs. Quasi-static analysis of capacitance-voltage measurements indicates that there are at least two filled electron levels in the quantum dots, located 60 and 140 meV below the GaAs conduction band edge. The conductance of the structure depends on the balance between measurement frequency and the thermionic emission rate of carriers from the quantum dots. An investigation of the temperature-dependent conductance at different frequencies as a function of the reverse bias allows us to study separately the electron emission rates from the ground and first excited levels in the quantum dots. We estimate that the electron escape times from both levels of the quantum dots become comparable at room temperature and equal to about 100 ps.     

基于发光量子点的金属裂纹实时监测方法

研究了基于量子点的荧光特性实时监测金属裂纹扩展的方法。标准金属试样上涂覆了添加量子点的环氧树脂膜,在试样加载拉伸过程中,出现金属裂纹的区域伴随明显亮线,光谱测试发现其荧光强度明显高于非裂纹区域。借助共聚焦显微镜可观测到裂纹宽度最小达7μm,比已知的其他无损检测方法的探测极限有了显著提高。     

1.5mm腔长InAs/InP量子点激光器镜面外腔光谱特性研究

基于研制的1.5mm腔长InAs/InP共面条状量子点激光器,搭建了其镜面外腔结构,并对其光谱特性进行了测试,获得了镜面外腔周期性调制光谱,并在周期性的产生、多模激射和模式随电流的变化等方面对其光谱特性进行了分析研究。相比以前为获得单模使用的超短腔长超短外腔量子阱激光器,长腔长InAs/InP量子点激光器表现出较小的模式压缩比,更容易发生多模激射。     

CdSe/ZnS量子点掺杂聚合物光纤放大器增益特性分析

提出了一种半导体量子点CdSe/ZnS掺杂聚合物光纤放大器。测量了CdSe/ZnS量子点吸收和发射光谱,采用二能级结构和速率方程的方法,全面描述了CdSe/ZnS量子点掺杂聚合物光纤放大器的增益性能。计算了放大器增益随量子点掺杂光纤长度、量子点掺杂浓度和信号光强度的变化,给出了不同泵浦光强条件下的增益谱线及半高全宽。结果表明,在mW量级的泵浦条件下,CdSe/ZnS量子点掺杂聚合物光纤放大器可获得35dB以上的增益,获得相同增益所需泵浦光强度只有同类型染料掺杂聚合物光纤放大器的万分之一。泵浦光强与量子点掺杂浓度之间存在最佳对应关系,单位泵浦功率激发的最佳量子点数为6.33×107/mW。在室温下,CdSe/ZnS量子点掺杂聚合物光纤放大器具有550nm～610nm的带宽,含盖了聚合物光纤的低损窗口。     

量子点单光子探测器的研究进展

量子点单光子探测器具有可保持测试信号完整性、理论量子效率高、工作电压低等优点,同时具有室温单光子探测的潜力,最近得到了广泛的研究。文章介绍了基于三种不同形式量子点的单光子探测器,讨论了它们的工作原理,对比了各自的性能和参数,总结了各种器件的特点,说明了自组织量子点单光子探测的优越性能。