添加微量锡对铜基摩擦材料性能的影响

研究了添加微量锡对铜基摩擦的摩擦性能的影响。结果表明，微量锡对摩擦系数无显著影响，但对磨损有显著影响，当锡含量为０．５０％时，摩擦材料及对偶材料的磨损都较小。     

Low-cycle fatigue behavior of Sn-Ag, Sn-Ag-Cu, and Sn-Ag-Cu-Bi lead-free solders

Low-cycle fatigue (LCF) tests on as-cast Sn-3.5Ag, Sn-3Ag-0.5Cu, Sn-3Ag-0.5Cu-1Bi, and Sn-3Ag-0.5Cu-3Bi solders was carried out using a noncontact strain-controlled system at 20°C with a constant frequency of 0.1 Hz. The addition of Cu does not significantly affect the fatigue life of eutectic Sn-Ag solder. However, the fatigue life was significantly reduced with the addition of Bi. The LCF behavior of all solders followed the Coffin-Manson relationship. The fatigue life of the present solders is dominated by the fracture ductility and can be described by the ductility-modified Coffin-Manson’s relationship. Steps at the boundaries of dendrite phases were the initiation sites for microcracks for Sn-3.5Ag, Sn-3Ag-0.5Cu, and Sn-3Ag-0.5Cu-1Bi solders, while for Sn-3Ag-0.5Cu-3Bi solder, cracks initiated along both the dendrite boundaries and subgrain boundaries in the dendrite phases. The linking of these cracks and the propagation of cracks inside the specimen occurred both transgranularly through eutectic phases and intergranularly along dendrite boundaries or subgrain boundaries.     

AlSn20Cu/Steel双金属板(带)复合轧制过程的厚度匹配

通过对AlSn20Cu/Steel双金属板(带)复合轧制过程变形区变形规律的分析，确定了轧制过程的总变形率与各分层变形率的关系，解决了实际生产中各分层原料的厚度匹配问题。     

A ctivation measurement of neutron distribution in intermediate energy heavy ion target area

The distribution of neutrons produced by the reaction of 50MeV/u ^12C-ion on a thick Cu target are studied.The neutrons are measured with threshold activation detectors.Al.F,C,Al and In activation samples were used to measure neutrons with energy greater than 7,11,20,50MeV and thermal neutrons,respectively,The fluence rate,energy and angular distributions of neutrons,total neutron yield of 12C-ion and the emission rate in the forward direction of neutrons over 11 and 20MeV were obtained.     

Thermodynamic calculation of S−Sb system and Cu−S−Sb system

Sb₂S₃ and CuSbS₂ have been proposed as alternative earth-abundant absorber materials for thin-film solar cells. However, no thermodynamic study of the S−Sb binary system and the Cu−S−Sb ternary system were investigated. In this paper, The S−Sb system and the Cu−S−Sb system are calculated utilizing the so-called CALPHAD (CALculation of PHAse Diagrams) technique. Using TEM-EDS and XRD, Cu_0.9Sb₁S₂ is experimentally confirmed at the Cu₁Sb₁S₂ and Sb₂S₃ two-phases region in the isothermal section at 673 K of the Cu−S−Sb ternary system. Given the asymmetric shape and miscibility gap of the liquidus in the S−Sb phase diagram, the associate solution model for the liquid phase is adopted. The solution phases (liquid, bcc, fcc) are treated with the Redlich–Kister equation. The compounds S₃Sb₂, Cu₃SbS₃, Cu₁₂Sb₄S₁₃, CuSbS₂, and Cu₃SbS₄ are described as a stoichiometric compound. A set of self-consistent thermodynamic parameters of the S−Sb binary system and the Cu−S−Sb ternary system are obtained. The calculated results are in good agreement with the experimental data. This study provides a set of reliable thermodynamic parameters to the Cu−Sb−S thermodynamic database, and a cost-effective tool to design material synthesis experiments and manufacturing processes.     

A copper/polyimide Metal-base packaging technology

A unique substrate MCPM (Mitsubishi Copper Polyimide Metal-base) technology has been developed by applying our basic copper/polyimide technology.¹ This new substrate technology MCPM is suited for a high-density, multi-layer, multi-chip, high-power module/package, such as used for a computer. The new MCPM was processed using a copper metal base (110 × 110 mm), full copper system (all layers) with 50-μm fine lines. As for pad metallizations for the IC assembly, we evaluated both Ni/Au for chip and wire ICs and solder for TAB ICs. The total number of assembled ICs is 25. To improve the thermal dispersion, copper thermal vias are simultaneously formed by electro-plating. This thermal via is located between the IC chip and copper metal base, and promotes heat dispersion. We employed one large thermal via (4.5 mm^?) and four small vias (1.0 mm^?) for each IC pad. The effect of thermal vias and/or base metal is simulated by a computer analysis and compared with an alumina base substrate. The results show that the thermal vias are effective at lowering the temperature difference between the IC and base substrate, and also lowering the temperature rise of the IC chip. We also evaluated the substrate’s reliability by adhesion test, pressure cooker test, etc.     

基于2,4-二羟基苯甲酸铜(Ⅱ)为载体的硫氰酸根电极的电位响应

制备了基于一种简单的金属铜配合物2,4-二羟基苯甲酸铜(Ⅱ)(Cu(Ⅱ)DHBA)为载体的PVC膜硫氰酸根离子(SCN-)选择性电极。该电极在1.0×10-1～1.0×10-6mol/LSCN-浓度范围内呈现斜率为-59.5mV/dec的近Nernst电位响应,检测下限为9.1×10-7mol/L。利用紫外可见光谱及交流阻抗技术初步探讨了电极对SCN-呈现的选择性电位响应机理。该电极作为直接电位分析法的指示电极,成功运用于实验室废水中硫氰酸盐含量的测定。     

Cu—Cr合金电极触头板铸件的熔制

含０．４％～１．０％Ｃｒ的Ｃｕ－Ｃｒ合金具有优良的导电、导热性能，铸件经热处理强化后可获得较高的综合力学性能。近年来该合金作为一种新材料被广泛地用于制作电子工业、电器设备上的电极触头板、接触环、夹持体等零件。Ｃｕ－Ｃｒ合金存在易氧化吸气、凝固范围窄、收缩较大、易形成集中缩孔等缺陷，这些铸造特性给生产优良的Ｃｕ－Ｃｒ合金铸件带来一定的困难。以采用常规的熔炼设备和造型材料熔铸出Ｃｕ－Ｃｒ合金铸件——高压大电流电极触头板为例讨论这一熔铸的工艺方法。     

Study on diffusion welding SiCp/ZL101 with Cu interlayer

Through the vacuum diffusion welding SiCp/ZL101 aluminum with Cu interlayer,the effect of welding parame-ter and the thickness of Cu on the welded joint property was investigated,and the optimal welding parameters were putforward at the same time.The microstructure of joint was analyzed by means of optical-microscope,scanning electron mi-croscope in order to study the relationship between the macro-properties of joint and the microstructure.The results showthat diffusion welding with Cu interlayer could be used for welding aluminum matrix composites SiCp/ZL101 successfully.     

CYCLIC DEFORMATION BEHAVIOUR OF Cu SINGLE CRYSTALS ORIENTED FORDOUBLE SLIP Ⅱ. Persistent Slip Bands and Deformation Bands

用光学显微镜和扫描电镜研究了双滑移取向（［０３４］，［１１７］）Ｃｕ单晶循环饱和后的表面形貌，塑性分切应变幅（γｐｌ）低于１０~（－３）时，［０３４］晶体表面上要为主滑移系的驻留滑移带（ＰＳＢｓ）占据，次滑移只在边缘区域启动，其ＰＳＢｓ细窄（＜１μｍ），体积百分数在１％以下．γｐｌ＞１０~（－３）时，次滑移开始在试样的中部启动，同时，表面出现二种贯穿晶体的宏观形变带（ＤＢＩ，ＤＢＩＩ），滑移带在形变带内集中．［１１７］晶体在γｐｌ＝４．４×１０~（－４）时，双滑移现象已十分明显．γｐｌ＞１０~（－３）时，表面也形成与前者相似的形变带．ＤＢＩ的惯习面与主滑移面平行（［０３４］晶体）或接近（［１１７］晶体），ＤＢＩＩ的惯习面则与前者垂直，文章讨论了形变带形成的可能原因．