海底瞬变电磁探测技术的装置参数研究及实验

可控源时间域电磁法应用在海底探测,需要确定装置参数,通过实验和理论计算确定了发射频率的最大值;分析了发射线圈的电性对发射电流后沿的影响,确定了作为发射线圈的导线的时间常数应尽量小;对接收线圈的参数及过渡过程进行了理论分析和室内模型实验,理论计算了接收线圈电路模型在发射电流斜阶跃下降和关断后在欠阻尼、临界阻尼和过阻尼状态的一次感应电动势解的情况,确定了采用并联匹配电阻消除振荡的方法,并依据所分析的装置参数设计实施了海上实验,探测出海底低阻体的准确位置.     

Interaction of α radiation with iron-doped n-type silicon

Deep-level transient spectroscopy (DLTS) measurements were carried out on low-doped n-silicon before and after irradiation with 5.48 MeV α particles at room temperature with a fluence of 10¹⁰ α particles/cm². The DLTS measurements on the samples identified three electron levels E₁, E₂ and E₃ before irradiation. The deep-levels characteristic studies include emission rate signatures, activation energies, defect concentrations and capture cross sections. It was found that all pre-existing defects decreased their amplitudes during irradiation. The decrease in activation energy of level E₃ and noticeable suppression of level E₁ was also observed after irradiation. It was clearly seen that the composite peak E₃ (combination of E₂ and E₃) was successfully resolved after irradiating with α particles. α-irradiation is seen to lead a significant suppression of the iron interstitial defect, and without causing any change in its room temperature annealing characteristics.     

超声行波微流体驱动模型的耦合分析

介绍了带有微沟道的超声行波微流体驱动的圆环模型。在对模型结构部分进行模态分析和瞬态动力学分析的基础上,基于有限元分析,针对耦合模型作声固耦合分析,分别得到与空气和水耦合时模型的固有频率;进行耦合场的流固耦合分析,采用瞬态动力学方法,得到沟道内流体在超声行波激励下的流场情况。比较不同时间子步时流体域和固体域的位移云图,得到流体随固体振动情况;分析不同时间子步时流体域的速度矢量图,得到流体在超声行波方向上的流动情况,验证了超声行波微流体驱动的可行性。     

功率MOSFET并联应用及研究

对作用在C类状态下频率为MHz以上的功率MOSFET并联均流情况进行了研究,分析功率MOSFET并联时造成不均流的各种因素,着重解析稳态和暂态电流平衡问题,并通过仿真提出一些解决方法和建议。实验结果表明,使用参数尽量一致的MOSFET管对称分布进行并联,并采取合理的电路布局,通过调节电路参数能获得较好的均流效果。     

700V高压LDMOS器件瞬态失效机理研究

详细分析了700V横向双扩散金属氧化物半导体(LDMOS)器件瞬态失效机理的特性。研究表明触发器件寄生晶体管开启的失效功率不仅与器件内部温度有关,同时也与电场分布有关。器件温度影响寄生阱电阻和衬底电流的大小,而电场分布影响器件内部碰撞电离。器件温度与电场分布均与栅脉冲参数有密切关系。为了阐述栅脉冲参数对器件温度的影响,模拟仿真了器件的热响应曲线。     

加速度信号调理电路设计及仿真

基于高冲击环境试验中对瞬态加速度信号的高精度测试需求,采用存储测试的方法设计了加速度存储测试仪。由于压电式传感器具有灵敏度高、量程大、较高固有频率、耐冲击等优点,所以使用其作为传感元件,设计了电荷放大电路、增益可调节的前置放大电路及滤波电路。较为详细地介绍了信号调理电路的设计及电阻电容的参数计算公式。通过仿真分析软件ORCAD,对电路参数进行了合理配置。仿真结果表明系统的信号幅度控制合理,滤波效果明显,电路设计具有实际应用价值。     

垂直腔面发射激光器的动态特性分析

本文给出了动态的垂直腔面发射速率方程,并由此推出了瞬态下的衰减因子和张弛振荡频率和计算公式,以及小信号调制下的光子、载流子的响应函数表达式。计算结果表明,在瞬态下衰减因子随β的增加明显变大,它使张弛振荡过程变短;在小信号调制下,多量子阱的周期增益结构比一般的垂直腔面发射结构有更大的调制带宽。     

Electronic Structure and Optoelectronic Properties of Bismuth Oxyiodide Robust against Percent‐Level Iodine‐, Oxygen‐, and Bismuth‐Related Surface Defects

In the search for nontoxic alternatives to lead‐halide perovskites, bismuth oxyiodide (BiOI) has emerged as a promising contender. BiOI is air‐stable for over three months, demonstrates promising early‐stage photovoltaic performance and, importantly, is predicted from calculations to tolerate vacancy and antisite defects. Here, whether BiOI tolerates point defects is experimentally investigated. BiOI thin films are annealed at a low temperature of 100 °C under vacuum (25 Pa absolute pressure). There is a relative reduction in the surface atomic fraction of iodine by over 40%, reduction in the surface bismuth fraction by over 5%, and an increase in the surface oxygen fraction by over 45%. Unexpectedly, the Bi 4f_7/2 core level position, Fermi level position, and valence band density of states of BiOI are not significantly changed. Further, the charge‐carrier lifetime, photoluminescence intensity, and the performance of the vacuum‐annealed BiOI films in solar cells remain unchanged. The results show BiOI to be electronically and optoelectronically robust to percent‐level changes in surface composition. However, from photoinduced current transient spectroscopy measurements, it is found that the as‐grown BiOI films have deep traps located ≈0.3 and 0.6 eV from the band edge. These traps limit the charge‐carrier lifetimes of BiOI, and future improvements in the performance of BiOI photovoltaics will need to focus on identifying their origin. Nevertheless, these deep traps are three to four orders of magnitude less concentrated than the surface point defects induced through vacuum annealing. The charge‐carrier lifetimes of the BiOI films are also orders of magnitude longer than if these surface defects were recombination active. This work therefore shows BiOI to be robust against processing conditions that lead to percent‐level iodine‐, bismuth‐, and oxygen‐related surface defects. This will simplify and reduce the cost of fabricating BiOI‐based electronic devices, and stands in contrast to the defect‐sensitivity of traditional covalent semiconductors.     

一种提高锁相环中电荷泵SET抵抗能力的辐射加固设计技术

A radiation-hardened-by-design （RHBD） technique for phase-locked loops （PLLs） has been developed for single-event transient （SET） mitigation. By presenting a novel SET-resistant complementary current limiter （CCL） and implementing it between the charge pump （CP） and the loop filter （LPF）, the PLL＇s single-event susceptibility is significantly decreased in the presence of SETs in CPs, whereas it has little impact on the loop parameters in the absence of SETs in CPs. Transistor-level simulation results show that the CCL circuit can significantly reduce the voltage perturbation on the input of the voltage-controlled oscillator （VCO） by up to 93.1% and reduce the recovery time of the PLL by up to 79.0%. Moreover, the CCL circuit can also accelerate the PLL recovery procedure from loss of lock due to phase or frequency shift, as well as a single-event strike.     

Near-Field Drives Long-Lived Shallow Trapping of Polymeric C3N4 for Efficient Photocatalytic Hydrogen Evolution

Undesired photoelectronic dormancy through active species decay is adverse to photoactivity enhancement. An insufficient extrinsic driving force leads to ultrafast deep charge trapping and photoactive species depopulation in carbon nitride (g-C₃N₄). Excitation of shallow trapping in g-C₃N₄ with long-lived excited states opens up the possibility of pursuing high-efficiency photocatalysis. Herein, a near-field-assisted model is constructed consisting of an In₂O₃-cube/g-C₃N₄ heterojunction associated with ultrafast photodynamic coupling. This In₂O₃-cube-induced near-field assistance system provides catalytic “hot areas”, efficiently enhances the lifetimes of excited states and shallow trapping in g-C₃N₄ and this favors an increased active species density. Optical simulations combined with time-resolved transient absorption spectroscopy shows there is a built-in charge transfer and the active species lifetimes are longer in the In₂O₃-cube/g-C₃N₄ hybrid. Besides these properties, the estimated overpotential and interfacial kinetics of the In₂O₃-cube/g-C₃N₄ hybrid co-promotes the liquid phase reaction and also helps in boosting the photocatalytic performance. The photocatalytic results exhibit a tremendous improvement (34-fold) for visible-light-driven hydrogen production. Near-field-assisted long-lived active species and the influences of trap states is a novel finding for enhancing (g-C₃N₄)-based photocatalytic performance.