16.0% Efficiency of large area (10 cm×10 cm) thin film polycrystalline silicon solar cell

High efficient large area thin film polycrystalline Si solar cell based on a silicon on insulator (SOI) structure prepared by zone-melting recrystallization (ZMR) is reported. Fabrication process of the via-hole etching for the separation of thin films (VEST) is newly developed. It is found that phosphorus treatment and back surface field (BSF) are quite effective for the VEST structure and the ZMR thin film polycrystalline silicon. The conversion efficiency as high as 16.0% for a practical size (10 cm×10 cm) is achieved. This is the highest for large area thin film polycrystalline Si solar cells ever reported.     

Measuring system for development of stroke-sensing cylinder forautomatic excavator

In order to develop a stroke-sensing cylinder for automatic excavators equipped with Hall sensors of GaAs type, a measuring test facility is set up and used in investigating the design parameters. The measuring system itself is a kind of XZ table with two moving axes in X and Z directions, respectively, on which sensing parts, including Hall sensors, are installed. Furthermore, to attain a high precision of movement of the measuring system, a new sliding mode control is introduced, which diminishes chattering in the control loop by setting two dead zones along the switching line. The unknown parameters for sliding mode control are estimated by a signal compression method. The output signal from a Hall sensor was analyzed by using a measuring instrument. In particular, the detected signal according to the Hall sensor's movement on the piston rod, which has a magnetic scale, was investigated and the vertical distance between the Hall sensor and the piston rod, which gives direct effects on the detected signal, was obtained. Based on these results, the stroke-sensing cylinder was designed and fabricated     

Example-based color transformation of image and video using basic color categories.

Color transformation is the most effective method to improve the mood of an image, because color has a large influence in forming the mood. However, conventional color transformation tools have a tradeoff between the quality of the resultant image and the amount of manual operation. To achieve a more detailed and natural result with less labor, we previously suggested a method that performs an example-based color stylization of images using perceptual color categories. In this paper, we extend this method to make the algorithm more robust and to stylize the colors of video frame sequences. We present a variety of results, arguing that these images and videos convey a different, but coherent mood.     

Electrostatic fluctuation measurements in the periphery of reversed field pinch plasma

In this paper, the authors study the magnetic and electric properties of ferromagnetic substance/semimetal (Fe/Bi) system multilayered thin films prepared by ion beam sputtering. The multilayered thin film was prepared with 99.6% Fe and 99.99% Bi. The experimental results are summarized as follows. From XRD in the small‐degree region (2θ = 2 to 4^°), Fe/Bi system thin films for N = 3,4, and 5 Fe layers have formed multilayer structures. Coercive force H_c increased with increasing number of Fe layers. The maximum value was 4.522 kA/m at N = 6 Fe layers. The coercive force then decreased and its value was constant at more than 15 layers. Electrical resistivity, ρ, of Fe/Bi system multilayered thin films changed from conductivity to semiconductivity at temperatures in the range for T = 380 to 400 K. Magneto‐resistance (MR) ratio decreased with increasing applied field H when the current was parallel to an applied magnetic field (I‖H). MR ratio reached a maximum of 0.154% at N = 4 Fe layers at room temperature. © 2005 Wiley Periodicals, Inc. Electr Eng Jpn, 151(1): 1–8, 2005; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20068     

40 Gbit/s electroabsorption modulators with impedance-controlled electrodes

A novel travelling-wave electroabsorption optical modulator, electrically matched for 50 /spl Omega/ loads of driving circuit drivers, was developed. The scattering parameter of electric reflection (S/sub 11/) from this modulator is less than -20 dB at 20 GHz. It can thus enable a 40 Gbit/s, 2 km SMF transmission with a 0.3 dB penalty at a 1.3 /spl mu/m wavelength.     

Study on the device characteristics of a quasi-SOI power MOSFETfabricated by reversed silicon wafer direct bonding

The device characteristics of a quasi-SOI power MOSFET were investigated to obtain its optimum device structure. The oxide at the original bottom surface of the bulk power MOSFET of the quasi-SOI power MOSFET formed by reversed silicon wafer direct bonding acts as the buried oxide of the conventional SOI power MOSFET. The short channel effect of the quasi-SOI power MOSFET was larger than that in the conventional SOI power MOSFET. It was suppressed by increasing the width of the oxide in the body region, and the parasitic bipolar effect was suppressed by decreasing it. We also propose a new device structure which can suppress the short channel effect and parasitic bipolar effect of a quasi-SOI power MOSFET based on the results of these experiments     

A dual-mode sensing scheme of capacitor-coupled EEPROM cell

A dual-mode sensing (DMS) scheme for a capacitor-coupled EEPROM cell is described. A memory cell structure and a sensing scheme are proposed and estimated. The memory cell combines an EEPROM cell with a DRAM cell. The DMS scheme utilizes the charge-mode sensing of the EEPROM cell. Using this DMS technique, the sensing speed can be enhanced by 36% at a cell current of 15 μA by virtue of the additional charge-mode sensing. Furthermore, the stress applied to the tunnel oxide of the memory transistor can be relieved by decreasing the programming voltage and shortening the programming time. Therefore, with this memory cell structure and sensing scheme, it is possible to realize high-speed sensing in low-voltage operation and high endurance     

New esterification method for resin acids

The reaction of tetraalkylammonium salts of resin acids using dehydroabietic acid as the model with various alkyl polychlorides was studied as a method for preparing new ester derivatives of rosins. Of the alkyl halides investigated, methylene chloride, 1,1-dichloroethane, 1,2-dichloroethane, trichloroethylene and 1,2,3-trichloropropane reacted with tetrabutylammonium dehydroabietate at moderate temperatures in short reaction times. A number of new esters were identified by NMR, IR and CI-MS. Although many of the primary products were the anticipated monoesters and diesters, some dehydrochlorinated esters were also obtained. The reaction with trichloroethylene resulted in appreciable amounts of dehydroabietic acid anhydride.     

SOI-DRAM circuit technologies for low power high speed multigigascale memories

This paper describes a silicon on insulator (SOI) DRAM which has a body bias controlling technique for high-speed circuit operation and a new type of redundancy for low standby power operation, aimed at high yield. The body bias controlling technique contributes to super-body synchronous sensing and body-bias controlled logic. The super-body synchronous sensing achieves 3.0 ns faster sensing than body synchronous sensing and the body-bias controlled logic realizes 8.0 ns faster peripheral logic operation compared with a conventional logic scheme, at 1.5 V in a 4 Gb-level SOI DRAM. The body-bias controlled logic also realizes a body-bias change current reduction of 1/20, compared with a bulk well-structure. A new type of redundancy that overcomes the standby current failure resulting from a wordline-bitline short is also discussed in respect of yield and area penalty