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We report the current-voltage(I-V) characteristics of the Schottky diode(Au/n-InP) as a function of temperature. The SILVACO-TCAD numerical simulator is used to calculate the I-V characteristic in the temperature range of 280-400 K. This is to study the effect of temperature on the I-V curves and assess the main parameters that characterize the Schottky diode such as the ideality factor, the height of the barrier and the series resistance. The I-V characteristics are analyzed on the basis of standard thermionic emission(TE) theory and the inhomogeneous barrier heights(BHs) assuming a Gaussian distribution. It is shown that the ideality factor decreases while the barrier height increases with increasing temperature, on the basis of TE theory. Furthermore, the homogeneous BH value of approximately 0.524 eV for the device has been obtained from the linear relationship between the temperature-dependent experimentally effective BHs and ideality factors. The modified Richardson plot, according to the inhomogeneity of the BHs, has a good linearity over the temperature range. The evaluated Richardson constant A* was 10.32 A·cm-2·K-2, which is close to the theoretical value of 9.4 A·cm-2·K-2 for n-InP. The temperature dependence of the I-V characteristics of the Au/n-InP Schottky diode have been successfully explained on the basis of the thermionic emission(TE) mechanism with a Gaussian distribution of the Schottky barrier heights(SBHs). Simulated I-V characteristics are in good agreement with the measurements[Korucu D, Mammadov T S. J Optoelectronics Advanced Materials, 2012, 14:41]. The barrier height obtained using Gaussian Schottky barrier distribution is 0.52 eV, which is about half the band gap of InP.  相似文献   
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The purpose of this work is to study the effect of using some admixtures such as calcium nitrate and triisopropanolamine on the setting and hardening process of cement pastes at 20°C temperature. Tests were performed on specimens cast from various mixtures prepared with two types of cements. The results indicate that calcium nitrate alone acts as a setting accelerator, but has relatively little beneficial effect on the long term period development of mechanical resistances. Regardless of the cement type used, triisopropanolamine used alone performed well as a hardening accelerator at all ages. The combined addition of calcium nitrate and triisopropanolamine produced at very early age significant and promising results with respect to both setting and hardening acceleration. Continuous compressive strength increase was observed with time.  相似文献   
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In this paper, new modeling and optimization approaches are proposed to improve the electrical behavior of the submicron Dual-Material-gate (DM) Gallium Arsenide (GaAs)-MESFETs for analog circuit applications. The electrical properties such as current-voltage characteristics, transconductance, output conductance and drain to source resistance of the device have been ascertained and mathematical models have been developed. The proposed mathematical models are used to formulate the objective functions, which are the pre-requisite of genetic algorithm. The problem is then presented as a multi-objective optimization one, where the electrical parameters are considered simultaneously. Analog electrical parameters are also built for the three points sampled from the different locations of the Pareto front, and a discussion is presented for the Pareto relation between the small signal performances (analog behavior) and the design parameters. Therefore, the proposed technique is used to search for optimal electrical and dimensional parameters to obtain better electrical performance of the device for analog circuit applications. The proposed models have been validated by comparison with 2-D numerical simulations (SILVACO); the observed agreement with numerical simulations is quite good.  相似文献   
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In this paper, new Dual-Material-gate (DM) concept and optimization approach are proposed to improve the device immunity against the hot carrier and short channel effects (SCEs), and optimize the subthreshold electrical performance of the submicron Gallium Nitride (GaN)-MESFET. The 2D analytical analysis includes the modeling of the channel potential, subthreshold swing, threshold voltage, Drain-Induced Lowering Barrier (DIBL) and parasitic resistances. The influence of gate length and the work function of each gate region on subthreshold behavior was investigated using the developed analytical models. The developed analytical approaches are verified and validated by the good agreement found with the 2D numerical simulations for wide range of device parameters and bias conditions. The presented compact models are used to formulate the different objective functions, which are the pre-requisite of multi-objective genetic algorithms optimization, which will be used to optimize the device subthreshold performances. The optimized design can alleviate the critical problem and further improve the immunity of SCEs of submicron GaN-MESFET-based digital circuits for low power and high speed applications.  相似文献   
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This paper presents the results of an experimental study that investigated the rheological and mechanical properties of self-compacting mortars incorporating fine dune sand (DS), which has a tight Particle size distribution. Mortar mixtures were prepared with crushed sand (CS) or river sand (RS) in which the fine aggregates were replaced partially by different percentages of DS of 0, 25, 50, 75 and 100%. The effect of DS on the fresh mortars properties was studied using the mini-slump flow, V-funnel flow time and viscosity measurements tests. Compressive strength and flexural strength were determined at age of 3, 7 and 28 days. Experimental results indicate an improvement in fresh rheological without reducing in mechanical properties of self-compacting mortars when fine aggregates were replaced partially with DS (50%). However, at high-level DS replacement (75%) the slump flow decreases. The replacement of the DS to the CS or to the RS shows an increase in the mixture viscosity. In general, the compressive and flexural strength were not significant affected with an increase in DS replacement. Finally, based on the results obtained in this investigation, DS may provide a readily available alternative material as fine aggregates in mortar application.  相似文献   
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This paper focuses on the influence of the chemical nature and the fineness of the fillers on the hydration process and on the compressive strength development. Four different types of fillers are considered in combination with Portland cement: quartzite filler, alumina filler, limestone filler, and silica fume. The study deals with blended mortars having a 0.45 water to powder (cement and filler) ratio with a 10% substitution of cement by filler. Quartzite fillers do not seem to accelerate the hydration process in a significant way. No positive effect is noticed on the strength development either. The presence of a fine inert alumina powder increases the rate of early hydration of Portland cement. The greater the fineness, the faster the rate of hydration heat development. This reactivity leads to an increase in the compressive strength at early age for mortar containing the finest alumina powders. In case of coarse alumina powder, no acceleration effect is obtained. Finely ground limestone (calcite) fillers promote heterogeneous nucleation of hydrates which significantly accelerates hydration. At early age, this also results in an increased mortar compressive strength in comparison with the control mortar. From the obtained results, it is clear that both chemical natures as well as fineness are important with regard to the accelerating effect of the hydration process. With increasing fineness, the accelerating effect increases. For powders with comparable fineness, it is clear that limestone powder has a more significant accelerating effect than silica fume and alumina filler. Quartzite filler seems to have no significant effect.  相似文献   
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In this paper, the carrier density, temperature and quantum well width effect have been investigated for the optical gain for a Cd1?xZnxTe/ZnTe Zinc-blend strained quantum well structure. The device emits laser radiations in green–yellow–orange. Our results showed that the optical gain significantly increases with the increasing of the carrier density. It also increases with the decreasing of the Zn concentration, the well width and the temperature. In addition, the optimal threshold current density values were determined for three alloy compositions as 0.7, 0.8 and 0.9.  相似文献   
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