用于厚屏蔽小探测器的蒙特卡罗模拟减方差方法研究

反应堆屏蔽计算中经常出现厚屏蔽、小探测器问题，常规蒙特卡罗方法难以有效解决。基于自动重要抽样（AIS）方法，本文提出了小探测器自动重要抽样(SDAIS)方法，并针对小探测器问题，优化了AIS方法的虚粒子赌分裂算法。该方法在自主开发的蒙特卡罗屏蔽程序MCShield上进行了实现。使用NUREG/CR-6115 PWR基准题验证该方法的正确性和计算效率。结果表明，SDAIS方法可有效地解决厚屏蔽小探测器问题，相比AIS方法及传统的重要性方法，计算效率提升1~2个量级。     

急性炎性疾病患者乳酸林格氏液液体动力学

目的:探索炎性疾病患者的乳酸林格氏液（Ringer's lactate,RL）液体动力学特征以及炎性生物标记物是否可以作为协变量影响RL分布和排泄。方法:本研究为前瞻性队列研究。选择40例美国麻醉医师分级（ASA）I-II级，腹腔镜下择期胆囊切除术（胆囊炎组，n=20）或者腹腔镜下急诊阑尾切除术（阑尾炎组，n=20）。所有患者麻醉诱导前开始输注RL，按15 mL/kg，35 min内输毕。采用酶联免疫（enzyme-linked immunosorbent assay,ELISA）方法测定血浆炎症（TNF-α,IL-10和CRP）或者内皮损伤生物标记物（syndecan-1,SDC-1）；利用血红蛋白（Hb）稀释-时间曲线和尿量，使用Phoenix软件，采用非线性混合效应模型分析计算RL液体动力学参数和协变量的影响。结果:与胆囊炎组相比，阑尾炎组RL从组织间隙到血浆的转运速率常数（k21）显著降低（14×10-3min-1 versus 35×10-3min-1;P=0.012）。阑尾炎组C反应蛋白（CRP）升高［中位数38.1(1.8-143.6) μg/mL versus 1.3(0.1-159.0) μg/mL;P<0.001］；与清醒状态相比，麻醉期间（输液开始后30～45 min），液体从中央室中到外周室的转运速率常数（k12）显著增加（57×10-3min-1 versus 32×10-3min-1；P<0.01）。清除速率常数（k10）降低90%（0.6×10-3min-1 versus 5.3×10-3min-1;P<0.001）。无论在清醒状态还是麻醉状态下低血压均能降低液体清除；炎症或者内膜损伤的生物标记物不能作为显著影响RL液体动力学参数的协变量。结论:阑尾炎或者胆囊炎患者术前输入液体后“炎症反应的生物标记物”不是RL的液体动力学的协变量，但是两组患者中，全身麻醉期间输入液体的清除率下降。     

基于亚龙YL-236的32×16 LED点阵显示屏的设计

文章介绍了基于亚龙YL-236实验台的32×16点阵显示屏的硬件电路设计、电路驱动、软件设计,实现滚动显示16×16的汉字、8×16的数字、字母。具有结构简单,可控性好,方便实现的优点,具有一定的实际价值。     

应变纤锌矿ZnO/MgxZn1-xO量子点中离子施主束缚激子的光学性质

Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong built-in electric field(BEF) in strained wurtzite Zn O/Mg0:25Zn0:75O quantum dots(QDs), the optical properties of ionized donor-bound excitons(D+, X)are investigated theoretically using a variational method. The computations are performed in the case of finite band offset. Numerical results indicate that the optical properties of(D+, X) complexes sensitively depend on the donor position, the QD size and the BEF. The binding energy of(D+, X) complexes is larger when the donor is located in the vicinity of the left interface of the QDs, and it decreases with increasing QD size. The oscillator strength reduces with an increase in the dot height and increases with an increase in the dot radius. Furthermore, when the QD size decreases, the absorption peak intensity shows a marked increment, and the absorption coefficient peak has a blueshift. The strong BEF causes a redshift of the absorption coefficient peak and causes the absorption peak intensity to decrease remarkably. The physical reasons for these relationships have been analyzed in depth.     

压裂水平井产能预测方法研究进展

水平井压裂技术在低渗透及非常规储层中得到了广泛应用,压裂后水平井的产能预测关系到油田开发方案的制定,因此,国内外学者对压后渗流模型的建立和求解方法做出了不懈的努力。本文详细回顾了国内外学者所建压裂水平井产能预测模型及求解方法,指出了不同模型和求解方法的优缺点,并展望了压裂水平井产能模型的发展方向。     

基于密钥共享的分层混合认证模型

随着信息时代的迅速发展,云计算数据访问安全已经成为了用户最关心的问题。身份认证技术是确保参与者在开放的网络环境中实现安全通信的一种重要手段,如何利用身份认证技术为云环境安全保驾护航,成为学者研究的热点。文中通过公钥基础设施(Public Key Infrastructure,PKI)颁发CA证书以在不同云服务间建立信任,将多个采用身份密码体制(Identity-Based Encryption,IBE)的云联合起来；采用分层身份加密体系,引入共享密钥技术,通过选取成环结构,提出一种PKI-IBE混合认证模型方案,并对方案的安全性进行分析,从理论上证明了云环境下PKI-IBE(Public Key Infrastructure-Identity-Based Encryption)同层成环模型提供服务的可行性。同时文中设计了一种基于该模型的签密技术,通过公私密钥对实现云内认证以及跨云认证。安全性理论证明与性能分析表明,该方案在计算量稍增加的前提下,保证了足够的安全性,更加满足云环境下的用户分属不同云域的认证以及用户安全访问的需求,有效解决了云环境中数据访问的安全问题。     

Fabrication of Cu/graphite film/Cu sandwich composites with ultrahigh thermal conductivity for thermal management applications

Effective thermal management of electronic integrated devices with high powder density has become a serious issue, which requires materials with high thermal conductivity (TC). In order to solve the problem of weak bonding between graphite and Cu, a novel Cu/graphite film/Cu sandwich composite (Cu/GF/Cu composite) with ultrahigh TC was fabricated by electro-deposition. The micro-riveting structure was introduced to enhance the bonding strength between graphite film and deposited Cu layers by preparing a rectangular array of micro-holes on the graphite film before electro-deposition. TC and mechanical properties of the composites with different graphite volume fractions and current densities were investigated. The results showed that the TC enhancement generated by the micro-riveting structure for Cu/GF/Cu composites at low graphite content was more effective than that at high graphite content, and the strong texture orientation of deposited Cu resulted in high TC. Under the optimizing preparing condition, the highest in-plane TC reached 824.3 W·m⁻¹·K⁻¹, while the ultimate tensile strength of this composite was about four times higher than that of the graphite film.     

AutoCAD、StruCAD 3D及SolidWorks软件在石油井架、底座强度校核中的应用

分别使用AutoCAD、StruCAD 3D及Solid Works软件在石油井架、底座校核中进行强度分析,AutoCAD软件的主要优势在工程制图领域,兼具强度分析功能,适用于单个形状比较规则的型材强度分析;StruCAD 3D是专门针对大型钢结构进行强度校核的分析软件,具有强大的计算处理功能,兼具风载处理能力,在处理大型、复杂结构的时候应优先考虑应用该软件;当遇到需要进行实体造型、模拟实际情况进行校核时,SolidWorks软件较为方便,可以直观地看到应变情况。     

新型钢丝圈清洁器的使用效果

为了解决钢丝圈挂花问题,阐述了LH001新型钢丝圈清洁器的特点和应用效果;通过试验说明使用新型钢丝圈清洁器断头率低,基本无挂花,纺纱效果好。指出:新型钢丝圈清洁器是普通钢丝圈清洁器的更新换代产品,值得推广。     

THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.