The cranial MRI in severe cerebral palsy: a comparative study with clinical data

The magnetic resonance examination was performed in 38 patients with severe cerebral palsy (CP; 15 males and 23 females) who had both motor delay (unable to move anywhere) and mental retardation (I. Q or D. Q below 30). Neuroimaging findings were compared with the CP type, etiology, and grade of understanding of language. Cranial magnetic resonance imagings (MRI) in CP were divided into five types. Type 1 : nine predominantly showed cyst-liked ventricles and periventricular hyperintensity on T2-weighted imaging (PVH) and only scarred basal ganglia and thalamus were visible. All suffered from neonatal asphyxia and the clinical type was rigospastic tetraplegia (RST). Type 2: eleven predominantly showed PVH and hyperintensity on T2-weighted (HT2) in basal ganglia and thalamus. All suffered from neonatal asphyxia and the clinical type was RST or rigospastic diplegia. Type 3: five showed PVH and three had cortical atrophy. All suffered from neonatal asphyxia and the clinical type was spastic diplegia. Type 4: four predominantly showed HT 2 in putamen and thalamus. Three had cortical atrophy. All suffered from neonatal asphyxia. The clinical type was athetotic CP (ATH). Type 5: nine predominantly showed HT 2 in globus pallidus. Four had cortical atrophy and two had hippocampal atrophy. All suffered from neonatal jaundice and the clinical type was ATH. All patients who suffered from neonatal asphyxia and spastic CP had MRI in PVH. All patients who suffered from neonatal asphyxia and ATH showed HT 2 in putamen and thalamus. Almost patients who suffered neonatal jaundice and ATH showed HT 2 in globus pallidus. With athetotic CP, cases with atrophy of the cerebral cortex or/and hippocampus were lower grade of understanding of language than no atrophy of both. The result of studies of MRI are in agreement with neuropathological findings.     

Integrated-optic double-ring resonators with a wide free spectralrange of 100 GHz

Integrated-optic double-ring resonators with a wide free spectral range (FSR) of 100 GHz are fabricated using GeO₂-doped silica waveguides with a high relative refractive index difference (Δ) of 1.5%. The resonators are composed of two ring resonators comprising small ring waveguides with radii of 1.75 and 2.0 mm. The double-ring resonator module exhibited a wide FSR of 98.0 GHz, a finesse of higher than 138, a low crosstalk of less than -11.7 dB, and a low insertion loss of 6.1 dB. The measured FSR of 98.0 GHz is wider than any previously reported ring resonator composed of optical waveguides     

Role of conserved Asn-Tyr-Asp-Tyr sequence in bacterial copper/2,4, 5-trihydroxyphenylalanyl quinone-containing histamine oxidase

Copper amine oxidase contains a covalently bound quinonoid cofactor, 2,4,5-trihydroxyphenylalanyl quinone (TPQ), which is synthesized by post-translational modification of a specific tyrosyl residue occurring in the highly conserved sequence, Asn-Tyr-(Asp/Glu)-Tyr. To elucidate the role(s) of the conserved sequence in the biogenesis of TPQ, each of the corresponding residues at positions 401-404 in the recombinant histamine oxidase from Arthrobacter globiformis has been replaced with other amino acids by site-directed mutagenesis. When Asn-401 was changed to Asp or Gln, the rate of TPQ formation by copper-dependent self-processing was 10(3)- to 10(4)-fold slower than in the wild-type enzyme. When Tyr-402 was replaced by Phe, TPQ was not formed at all, showing that Tyr-402 is essential as the precursor to TPQ. In contrast, Asp-403 could be replaced by Glu without changes in the rate of TPQ formation, whereas its replacement by Asn led to a marked decrease. Furthermore, when Tyr-404 was changed to Phe, TPQ was formed swiftly on incubation with copper ions, but the TPQ enzyme exhibited very low activity with altered substrate specificity. These results collectively indicate that a very rigorous structural motif is required for efficient formation of TPQ and for the catalytic activity in the active site of copper amine oxidases.     

Fabrication of 64×64 arrayed-waveguide grating multiplexer onsilicon

A 64 channel arrayed-waveguide multiplexer with 0.4 nm (50 GHz) channel spacing at 1.55 μm has been fabricated using SiO₂-Si waveguides. The authors obtained a crosstalk of less than -27 dB to neighbouring and all other channels. The on-chip insertion loss ranges from 3.1 to 5.7 dB for central and peripheral output ports, respectively     

Subarachnoid haemorrhage induced proliferation of leptomeningeal cells and deposition of extracellular matrices in the arachnoid granulations and subarachnoid space. Immunhistochemical study

Subarachnoid haemorrhage (SAH) often leads to subarachnoid fibrosis and resultant normal pressure hydrocephalus; however, how subarachnoid fibrosis occurs is unknown. We examined the changes within arachnoid granulations (AGs) and the subarachnoid space (SAS) chronologically at the parasagittal region obtained from patients with SAH at autopsy and made comparison with controls by immunostaining for cytokeratin, specific marker for leptomeningeal cells and by the elastica Masson-Goldner methods. Within a week some AGs were torn, and many inflammatory cells filled the AGs and SAS. Cytokeratin positive cells were scarce. During the next two weeks cytokeratin positive cells increased. After three weeks, AGs and SAS were filled by dense deposits of extracellular matrices surrounded by multiple layers of leptomeningeal cells.     

A 10-s doping technology for the application of low-temperaturepolysilicon TFTs to giant microelectronics

A bucket-type high-density (0.25-1.2-mA/cm²) low-energy (500-2000 V) ion source was utilized for high-speed phosphorus doping directly into a thin polysilicon layer without cap SiO₂. Doping gas with He dilution was selected to reduce etching of polysilicon film. Excimer laser (XeCl, 8 mm×8 mm) pulse annealing was introduced to activate effectively the doped impurity. The combination of these techniques provided a practically low sheet resistance for the TFT source, drain, and gate with a short time doping. The low-temperature polysilicon TFT fabricated with a doping time of 10 s had characteristics comparable to those of that fabricated by a longer time doping or conventional ion implantation, showing the practicality of this technology and its promise for giant microelectronics     

Environmental effect on room- temperature ductility of isothermally forged tial- base alloys

Isothermally forged TiAl-base alloys (Al-rich, Mn-containing, and Cr-containing TiAl) were heat-treated in various conditions, and equiaxed grain structures consisting of γ and α₂ or Β phases were obtained. The heat-treated alloys were tensile tested in vacuum and air at room temperature, and the environmental effect on tensile elongation was studied. The ductility of the alloys consisting of equiaxed γ grains and a large amount of α₂ grains was not largely affected by laboratory air, and a decrease in the amount of α₂ grains resulted in a large reduction of ductility in air. The Β phase in the Cr-containing alloy improved the ductility in vacuum, but it resulted in a large reduction of ductility in air. Formerly with Kougakuin University, Shinjyuku-ku, Tokyo, Formerly with National Research Institute for Metals, Meguro-ku, Tokyo,     

Model for the potential barrier depth along the grain boundaries of an ultrathin tin dioxide gas sensor

A potential barrier model along the grain boundaries in ultrathin tin dioxide (SnO₂) gas sensors is presented. It is assumed that the negatively charged oxygens are adsorbed only on the grain boundaries. The potential barrier depth is expressed as functions of grain size, donor concentration and surface coverage of adsorbed oxygen ions at the boundaries. A direct consequence is that the conduction electrons are effectively confined in a grain when the film thickness becomes smaller than a critical value. This indicates a drastic increase in resistivity with decreasing film thickness in air, and thus an occurrence of an extremely high gas sensitivity.     

Schottky barrier heights of contact metals to p-type ZnSe

Schottky barrier heights (SBHs) of a variety of metals (In, Cd, Nb, Ti, W, Cu, Ag, Au, Ni, Pt, and Se) contacting to p-ZnSe grown by a molecular beam epitaxy method were determined by analyzing capacitance-voltage (C-V) and/or current density-voltage (J-V) curves. The SBH values of the Au and Ni contacts were determined from intersections of straight lines of the C⁻²-V curves to be 1.23 and 1.13 eV, respectively. The J-V calculations provided a large SBH value of 1.2 ± 0.1 eV for a variety of metals, indicating that the Fermi-level could be pinned at the contact interface. Reduction of the SBH values to a level lower than 0.4 eV and/or increase of doping concentrations to a level higher than 10²⁰ cm⁻³ are essential to obtain an ohmic contact with contact resistivity of around 10⁻³ Ω·cm².