Synthesis of chiral stationary phase via surface‐initiated atom transfer radical polymerization of vinylated cellulose 3,5‐dimethylphenylcarbamate

A polysaccharide‐immobilized chiral stationary phase (CSP) was prepared by the surface‐initiated atom transfer radical polymerization (SI‐ATRP), in pyridine, of cellulose 2,3‐bis(3,5‐dimethylphenylcarbamate), having a polymerizable vinyl group, on the surface of SiO₂ support. The successful preparation of the CSP was confirmed via Fourier transform infrared spectroscopy, field‐emission scanning electron microscopy, X‐ray photoelectron spectroscopy, elemental analysis and thermal analysis. The chiral recognition ability of the prepared CSP was evaluated with high‐performance liquid chromatography using 10 racemates with various mobile phases of hexane/alcohol, hexane/tetrahydrofuran and hexane/chloroform. As a result, this CSP prepared using SI‐ATRP can be used in tetrahydrofuran and chloroform solutions as eluents. Copyright © 2011 Society of Chemical Industry     

Expression of Aspergillus nidulans phy Gene in Nicotiana benthamiana Produces Active Phytase with Broad Specificities

A full-length phytase gene (phy) of Aspergillus nidulans was amplified from the cDNA library by polymerase chain reaction (PCR), and it was introduced into a bacterial expression vector, pET-28a. The recombinant protein (rPhy-E, 56 kDa) was overexpressed in the insoluble fraction of Escherichia coli culture, purified by Ni-NTA resin under denaturing conditions and injected into rats as an immunogen. To express A. nidulans phytase in a plant, the full-length of phy was cloned into a plant expression binary vector, pPZP212. The resultant construct was tested for its transient expression by Agrobacterium-infiltration into Nicotiana benthamiana leaves. Compared with a control, the agro-infiltrated leaf tissues showed the presence of phy mRNA and its high expression level in N.benthamiana. The recombinant phytase (rPhy-P, 62 kDa) was strongly reacted with the polyclonal antibody against the nonglycosylated rPhy-E. The rPhy-P showed glycosylation, two pH optima (pH 4.5 and pH 5.5), an optimum temperature at 45~55 °C, thermostability and broad substrate specificities. After deglycosylation by peptide-N-glycosidase F (PNGase-F), the rPhy-P significantly lost the phytase activity and retained 1/9 of the original activity after 10 min of incubation at 45 °C. Therefore, the deglycosylation caused a significant reduction in enzyme thermostability. In animal experiments, oral administration of the rPhy-P at 1500 U/kg body weight/day for seven days caused a significant reduction of phosphorus excretion by 16% in rat feces. Besides, the rPhy-P did not result in any toxicological changes and clinical signs.     

Preparation and evaluation of poly(2-hydroxyethyl aspartamide)-hexadecylamine-iron oxide for MR imaging of lymph nodes

The purpose of this study was to synthesize biocompatible poly(2-hydroxyethyl aspartamide)–C₁₆-iron oxide (PHEA-C₁₆-iron oxide) nanoparticles and to evaluate their efficacy as a contrast agent for magnetic resonance imaging of lymph nodes. The PHEA-C₁₆-iron oxide nanoparticles were synthesized by coprecipitation method. The core size of the PHEA-C₁₆-iron oxide nanoparticles was about 5 to 7 nm, and the overall size of the nanoparticles was around 20, 60, and 150 nm in aqueous solution. The size of the nanoparticles was controlled by the amount of C₁₆. The 3.0-T MRI signal intensity of a rabbit lymph node was effectively reduced after intravenous administration of PHEA-C₁₆-iron oxide with the size of 20 nm. The in vitro and in vivo toxicity tests revealed the high biocompatibility of PHEA-C₁₆-iron oxide nanoparticles. Therefore, PHEA-C₁₆-iron oxide nanoparticles with 20-nm size can be potentially useful as T2-weighted MR imaging contrast agents for the detection of lymph nodes.     

Improved conversion efficiency of amorphous Si solar cells using a mesoporous ZnO pattern

To provide a front transparent electrode for use in highly efficient hydrogenated amorphous silicon (a-Si:H) thin-film solar cells, porous flat layer and micro-patterns of zinc oxide (ZnO) nanoparticle (NP) layers were prepared through ultraviolet nanoimprint lithography (UV-NIL) and deposited on Al-doped ZnO (AZO) layers. Through this, it was found that a porous micro-pattern of ZnO NPs dispersed in resin can optimize the light-trapping pattern, with the efficiency of solar cells based on patterned or flat mesoporous ZnO layers increased by 27% and 12%, respectively.     

Inverted organic photovoltaic device with a new electron transport layer

We demonstrate that there is a new solution-processed electron transport layer, lithium-doped zinc oxide (LZO), with high-performance inverted organic photovoltaic device. The device exhibits a fill factor of 68.58%, an open circuit voltage of 0.86 V, a short-circuit current density of −9.35 cm/mA² along with 5.49% power conversion efficiency. In addition, we studied the performance of blend ratio dependence on inverted organic photovoltaics. Our device also demonstrates a long stability shelf life over 4 weeks in air.     

Effect of sloped die lip geometry on the operability window in slot coating flows using viscocapillary and two-dimensional models

As an indicator for determining the operability window in slot coating flow, the viscocapillary model considering various configurations of upstream and downstream slot die lips was tested and compared with Navier–Stokes two-dimensional model. Bead pressure and sloped lip angle conditions for uniform coating operation demarcated from leaking and bead break-up defects were quantitatively predicted from the position of upstream meniscus from both models. By comparing the results, it is confirmed that the viscocapillary model for many kinds of sloped die lips could predict the operability window accurately. It is also found that there exists vortex or recirculation regimes inside upstream and downstream coating bead regions, depending on the angles of sloped die lips, even for the stable coating flow. The flow control by die lip structure will be usefully applied to design the strategy for the reliable and optimal coating process, including vortex-free windows.     

Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma

Silicon nitride (Si₃N₄) films have received great attention not only as dielectric materials for the gate dielectric of transistors and the insulator of capacitors, but also as a buffer layer and etch-stop layer for the semiconductor industry. As the applications of Si₃N₄ film increase, the necessity of investigating a novel deposition process applicable at low temperature has emerged. In this regard, the plasma-enhanced atomic layer deposition (PEALD) technique is attractive as a promising process; however, the Si₃N₄ film deposition process at growth temperatures less than 150?°C using PEALD has not been investigated. In this work, the growth behavior and chemistry of SiN_x (x?<?1.33) film deposited by the PEALD process at various growth temperatures were developed. Insufficient thermal energy from low growth temperature induces an unstable chemical state of deposited film due to the remaining unreacted ligand of adsorbed precursors. This state results in a further chemical reaction to SiO₂ formation by air exposure. Other chemical effects depending on chemical composition and electrical property were also examined in detail.     

A study on the thermoelectric properties of ALD-grown aluminum-doped tin oxide with respect to nanostructure modulations

The thermoelectric properties of aluminum-doped tin oxide (ATO) thin films synthesized by thermal atomic layer deposition (ALD) were studied with respect to the aluminum concentration. The overall aluminum content in each layer was modulated by adjusting the relative number of tin oxide (SnO₂) and aluminum oxide (Al₂O₃) growth cycles, where a sequential process involving n cycles of SnO₂ growth followed by 1 cycle of Al₂O₃ deposition was performed (building up a super-cycle). The electrical conductivity (620 S/cm), free carrier concentration (1.23x10²¹ cm^-3), and power factor (0.49 mW/K²m) increase until their maximum values are reached when the Al content is approximately 1.50 at% of the cations, and decrease as more Al is added in. On the other hand, the Seebeck coefficient decreases monotonically as the Al content increases up to about 2.88 at%, and begins to increase with further Al doping. Here the thermoelectric efficiency is therefore determined primarily by the free carrier concentration, while the Seebeck coefficient appears to be influenced by the overall crystal structure.