人工免疫原理在网络入侵检测系统中的研究

文章分析了人工免疫系统的原理,简单建立了一种基于否定选择算法的网络入侵检测系统,引入了一种用于异常事件识别的r-字符块匹配规则,并对规则存在的漏洞进行了分析。     

膨胀套管的弹塑性理论分析

分析认为，膨胀套管在膨胀过程中先进入弹性阶段，然后进入弹塑性阶段，最后进入塑性流动阶段。采用弹塑性分析方法，对膨胀套管膨胀过程中套管内壁的受力与变形进行了研究，模拟了其成形的过程，并建立了解析解，为膨胀套管膨胀操作过程中确定关键操作参数提供了理论支持。根据推导出的力学模型，计算出了外径107．9mm、钢级为J55的膨胀套管膨胀到直径139．7mm时膨胀芯头拉头处的轴向力为195．94kN。     

基于多相滤波器的信道化接收机及其应用研究

本文主要研究了应用多相滤波技术的信道化接收机建模问题。在给定信道频谱划分方案下,推导了基于多相 滤波器的信道化接收机数学模型。并由此模型设计了一个四信道模拟系统。最后用仿真实验结果验证了模型的正确性。     

宽带DDS跳频源设计

直接数字合成（DDS）简单可靠、控制方便，具有很高的频率分辨率，高速转换，非常适合快速跳频的要求。在对DDS基本原理进行了简要介绍和分析后，提出宽带跳频源设计方案。     

非稳定井流模型的半解析解

为了提高非稳定渗流计算的计算精度 ,通过数学分析得到了水位传导系数随时间变化时 ,一类非稳定渗流井流模型的半解析解 ,并进行了计算比较     

GaN-MOCVD设备反应室流场的CFD数值仿真

采用计算流体力学方法对生长半导体材料GaN的重要设备MOCVD(金属有机物化学气相沉积)反应室中的流场结构进行了三维数值仿真.数值模拟采用基于非交错网格系统的SIMPLE算法,用有限体积方法对控制方程进行离散,并采用改进的压力-速度耦合方法进行求解.数值仿真给出了具有复杂几何结构和运动方式的GaN-MOCVD反应室中的流场结构,研究了改变几何尺寸和运行参数对MOCVD反应室流场结构的影响,对正在试制开发中的MOCVD设备的几何结构的改进和运行参数的优化提出了指导性建议.     

一种基于空间到达角的卫星电子侦察信号分选方法

在建立简化的卫星电子侦察空间模型的基础上，提出了一种利用空间到达角分选卫星电子侦察信号的新方法。通过仿真实验验证了这种方法的可行性。该方法可用于密集信号的预处理。     

Study on the inhibiting behavior of AMT on bronze in 5% citric acid solution

The corrosion behavior of bronze in the presence of 2-amino-5-mercapto-1,3,4-thiadiazole (AMT) has been investigated in 5% citric acid by electrochemical measurements such as potentiodynamic polarization method and electrochemical impedance spectroscopy (EIS). It has been revealed that AMT is a good inhibitor for bronze. Both cathodic process and anodic process on bronze treated with AMT were different from that on the bronze without AMT treatment. Fourier transform infrared (FTIR) analysis was carried out to characterize the protective film, which revealed that the composition of the protective film was polymeric Cu(I)-inhibitor complex. AMT acted as bidentate ligand through the aminic nitrogen atom and the closed ring nitrogen in the complex.     

基于模式理论光栅椭偏参数反演的数值模拟

将一种广泛用于求解系统优化问题的方法——正单纯形法，求解光栅的椭偏方程。首先，利用求解光栅的傅立叶模式理论对TE和TM波的复反射系数进行求解。然后计算出其相应的椭偏参数(△，Ψ)，并在该值的基础上加入不同偏差的随机高斯噪声，将加入噪声后的值(△m，Ψm)作为模拟测量值。最后使用优化算法进行反演。通过对几种常用面形光栅椭偏参数的数值模拟，一方面表明傅立叶模式理论计算光栅的椭偏参数不仅精度高。而且速度快；另一方面表明利用正单纯形法得到的光栅参数值很接近于正演时假设的参数值，从而从理论上证明了利用椭偏法测量光栅各种光学参数的可行性。     

Preparation, patterning and luminescent properties of nanocrystalline Gd2O3:A (A=Eu, Dy, Sm, Er) phosphor films via Pechini sol–gel soft lithography

Nanocrystalline Gd₂O₃:A (A=Eu³⁺, Dy³⁺, Sm³⁺, Er³⁺) phosphor films and their patterning were fabricated by a Pechini sol–gel process combined with a soft lithography. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and optical microscopy, UV/vis transmission and photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 500 °C and that the crystallinity increased with the elevation of annealing temperatures. Uniform and crack free non-patterned phosphor films were obtained by optimizing the composition of the coating sol, which mainly consisted of grains with an average size of 70 nm and a thickness of 550 nm. Using micro-molding in capillaries technique, we obtained homogeneous and defects-free patterned gel and crystalline phosphor films with different stripe widths (5, 10, 20 and 50 μm). Significant shrinkage (50%) was observed in the patterned films during the heat treatment process. The doped rare earth ions (A) showed their characteristic emission in crystalline Gd₂O₃ phosphor films due to an efficient energy transfer from Gd₂O₃ host to them. Both the lifetimes and PL intensity of the rare earth ions increased with increasing the annealing temperature from 500 to 900 °C, and the optimum concentrations for Eu³⁺, Dy³⁺, Sm³⁺, Er³⁺ were determined to be 5, 0.25, 1 and 1.5 mol% of Gd³⁺ in Gd₂O₃ films, respectively.