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131.
本文介绍了采用新的原料予处理方法合成三异丙氧基铝,并且选择更为合理的工艺手段精制产品,同时探讨了产物的催化合成机理。 相似文献
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By using the technology of the sequential interpenetrating polymer network, a series of novel damping materials based on a polydimethylsiloxane (PDMS)/polyacrylate (PAC) matrix with polymethacrylate (PMAC) were synthesized. They have a controllable broad transition peak spanning the temperature range of 150–220°C and the medial value of loss factor with maximum of 0.35–0.60. Dynamic mechanical analysis (DMA), differential scanning calorimetry (DSC), and atomic force microscopy (AFM) were applied to analyze and characterize the transition behavior and the microphase structure of the materials. It was found that the size and height of a transition peak at both the low‐ and the high‐temperature zones change as a function not only of the concentration of PMAC and PDMS but also of the kind of PMAC; simultaneously, the low‐ temperature behavior was also governed by the crystallization of PDMS. The content of the crosslinking agent exerts a significant influence on the configuration of the curves of the transition peaks. AFM shows a characteristic phase morphology of double‐phase continuity containing a transition layer and domain less than 1 μm, indicating that the interwoven multilayer networks are the key to incorporation of the immiscible components and form a broad damping functional region. © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 85: 545–551, 2002 相似文献
135.
本文主要根据电子整机的发展要求,从集成化、高性能和高可靠等三方面分析国外模似IC的发展,进而说明模拟IC总的发展趋势及其表现。最后指出,模拟IC正面临一个新的变革时期。 相似文献
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Weikai Su Wei Hong ZhengHau Zhu YunYi Wang 《Journal of Infrared, Millimeter and Terahertz Waves》1992,13(12):1925-1941
In this paper, the scattering parameters of a waveguide cross junction loaded with a metallic post in the center are analyzed for the first time by using the Method of Lines. The homogeneous boundary condition of the third kind and curved boundary are introduced in the formulation. Numerical results are in good agreement with the experimental data. The scattering parameters at Ka-band and W-band of the cross junctions loaded with metallic posts of different radii are presented. It is shown from the numerical results that loaded with metallic posts is an effective means for adjusting the network parameters of the waveguide cross junction to satisfy some special requirements in the design of millimeter wave components. 相似文献
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GaN buffer and main layers were grown by the conventional hydride vapor phase epitaxy technique using GaCl3 consecutively. The deposited buffer layers were investigated by atomic force microscopy and X-ray analysis. To examine the behavior of the buffer layers at main layer growth temperature, heat treatment was conducted at 900°C. Based on the results of the buffer layer study, GaN thick films were grown at 1050°C. Optimum deposition conditions of buffer layer from the buffer and main layer studies generally coincided. On the φ scanning pattern, the GaN films grown on (0001) Al2 O3 were single-crystalline. Band-edge emission dominated photoluminescence was observed at room temperature. 相似文献
138.
本文从智能网的基本概念入手,论述了利用 ZXJ10程控交换系统为发展智能网业务提供支持功能的技术策略以及分阶段实现的过程,并对各个阶段能够实现的业务作了简要介绍。 相似文献
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