Scaling planar silicon devices

The generation-over-generation scaling of critical CMOS technology parameters is ultimately bound by nonscalable limitations, such as the thermal voltage and the elementary electronic charge. Sustained improvement in performance and density has required the introduction of new device structures and materials. Partially depleted SOI, a most recent MOSFET innovation, has extended VLSI performance while introducing unique idiosyncrasies. Fully depleted SOI is one logical extension of this device design direction. Gate dielectric tunneling, device self-heating, and single-event upsets present developers of these next-generation devices with new challenges. Strained silicon and high-permittivity gate dielectric are examples of new materials that will enable CMOS developers to continue to deliver device performance enhancements in the sub-100 nm regime.     

The Role of the γ/ γeutectic and porosity on the tensile behavior of a single-crystal nickel-base superalloy

The microstructure of a single-crystal nickel-base superalloy, PWA 1480, has been varied by heat treatment and hot isostatic pressing in order to study the role of the γ/yγ′ eutectic and porosity on subsequent tensile behavior. The level of porosity was found not to affect any of the tensile properties, while the γ/γ′ eutectic strongly influenced ductility. Eliminating the γ/γ′ eutectic increased ductility which was attributed to the cleavage fracture of this constituent. It is proposed that such cleavage of the γ/γ′ eutectic is initiated by the stress created from impinging slip bands, promoting shear localization, and final fracture along {111} slip planes. The precise nature of this fracture process is discussed with emphasis on the role of the γ/′ micro-structure. The deformation structure of PWA 1480 was also studied, and while different in some respects from many other single-crystal superalloys, its fracture process appears to be similar. Formerly Graduate Student, Department of Metallurgical Engineering and Materials Science, Carnegie Mellon University.     

Dependence on the motif YIPP for the physical association of Jak2 kinase with the intracellular carboxyl tail of the angiotensin II AT1 receptor

Angiotensin II is the effector molecule of the renin-angiotensin system. Virtually all of its biochemical actions are mediated through a single class of cell-surface receptors called AT1. These receptors contain the structural features of the seven-transmembrane, G-protein-coupled receptor superfamily. Angiotensin II, acting through the AT1 receptor, also stimulates the Jak/STAT pathway by inducing ligand-dependent Jak2 tyrosine phosphorylation and activation. Here, we show that a glutathione S-transferase fusion protein containing the carboxyl-terminal 54 amino acids of the rat AT1A receptor physically binds to Jak2 in an angiotensin II-dependent manner. Deletional analysis, using both in vitro protocols and cell transfection analysis, showed that this association is dependent on the AT1A receptor motif YIPP (amino acids 319-322). The wild-type AT1A receptor can induce Jak2 tyrosine phosphorylation. In contrast, an AT1A receptor lacking the YIPP motif is unable to induce ligand-dependent phosphorylation of Jak2. Competition experiments with synthetic peptides suggest that each of the YIPP amino acids, including tyrosine 319, is important in Jak2 binding to the AT1A receptor. The binding of the AT1A receptor to the intracellular tyrosine kinase Jak2 supports the concept that the seven-transmembrane superfamily of receptors can physically associate with enzymatically active intracellular proteins, creating a signaling complex mechanistically similar to that observed with growth factor and cytokine receptors.     

Temporal order and functional analysis of mutations within the Fli-1 and p53 genes during the erythroleukemias induced by F-MuLV

The erythroleukemias induced by Friend murine leukemia virus (F-MuLV) result from the accumulation of a number of genetic changes, including activation of the Fli-1 proto-oncogene and inactivation of the p53 tumor suppressor gene. We have determined the temporal order of mutation of the genes involved in this multistage malignancy, by serial in vivo transplantation of F-MuLV induced primary erythroleukemias into syngenic Balb/c mice. These primary tumors are capable of growing when transplanted into syngenic mice, but die after several days of in vitro culture. From the transplanted tumors grown in syngenic mice, erythropoietin-dependent cell lines were established in culture that are clonally related to cells in the primary tumors. We show that retroviral insertional activation of the Fli-1 ets family member is the first detectable genetic event in F-MuLV induced primary erythroleukemias. Mutations in the p53 gene were observed in the Epo-dependent cell lines but not in the transplanted erythroleukemias used to establish these cell lines in culture. These data suggest that activation of Fli-1 plays an important role in the early stages of F-MuLV-induced leukemia, perhaps by altering the self-renewal probabilities of erythroid progenitor cells and that p53 mutations immortalize these cells, enabling them to grow in vitro in the presence of Epo.     

Biology of chronic radiation effect on tissues and wound healing

Radiation therapy exerts both acute and chronic effects on normal tissue included within treatment fields. The physics of radiation therapy and treatment techniques to minimize deleterious effects of radiation are presented. Management of radiation-damaged skin is discussed. Radiation effect on tissue, wound healing, and tumorigenesis also are reviewed.     

Decision-making in the treatment of subfoveal neovascularization in age-related macular degeneration. An analysis from the patient''s perspective

The human mineralocorticoid receptor of the steroid receptor family contains a modular structure with domain E which is considered to be a hormone binding domain. Recombinant protein approaches enabled us to clearly determine that this domain is also able to interact with F-actin (Kd about 2 microM) and G-actin. Moreover, it was revealed that this mineralocorticoid receptor domain/actin interaction was modulated by specific mineralocorticoid ligands. Agonist (aldosterone) steroid binding almost totally (91%) abolished the interaction with F-actin, while antagonist (progesterone) binding allowed more than 30% of this binding. Steroid modulation of the interaction between domain E and actin indicated that this actin binding is specific and could be essential for cellular mineralocorticoid receptor activity.     

Pulsed-current duty cycle dependence of electromigration-inducedstress generation in aluminum conductors

The effect of duty cycle of pulsed dc currents on the critical length-current density product, (jl_c), was measured using the Blech-Kinsbron edge-displacement technique [Thin Solid Films 25, 327 (1975)]. Unencapsulated Al edge-displacement segments mere stressed at various duty cycles and the critical lengths, the so-called “Blech lengths”, were measured. It was found that jl_c increased with decreasing duty cycle. We measured a factor of 2.6 increase in jl_c for the 25% duty cycle as compared to dc. This duty cycle dependence of Blech length implies that electromigration resistance for an integrated circuit would be increased for small duty cycle operation by increasing the fraction of interconnects which are sub-Blech-length and are not susceptible to EM damage     

Electromigration drift and threshold in Cu thin-film interconnects

The electromigration-induced ionic drift velocity and critical length-current density product, (jl_c) of Cu thin film conductors, were measured using the Blech-Kinsbron edge-displacement technique. Unencapsulated Cu edge-displacement segments on TiN conductors were stressed in vacuum at a modest current density of 6×10⁵ A/cm² in the temperature range of 175-275°C. Drift velocity was observed to be between 1-1/2 to 3 orders-of-magnitude lower than that previously measured for unencapsulated Al in this temperature range. We measured an activation energy for EM-induced drift of 1.25±0.08 eV which corresponds to grain boundary diffusion in Cu. Critical lengths were measured and the jl_c threshold was estimated to range between 900-1600 A/cm. We calculated a Cu grain boundary Z* value of -0.7, to our knowledge, this study is the first to measure Z* for electromigration in Cu thin film conductors