Hopping transport in the space-charge region of p-n structures with InGaN/GaN QWs as a source of excess 1/f noise and efficiency droop in LEDs

Semiconductors - It is shown that the emission efficiency and the 1/f noise level in light-emitting diodes with InGaN/GaN quantum wells correlate with how the differential resistance of a diode...     

Temperature and frequency characteristics of composites with semiconductor fillers

The paper describes the results of a study on the temperature and frequency dependences of the dielectric permeability and dielectric loss tangent of composite materials composed of low density polyethylene filled with cadmium sulfide (LDPE/CdS) and indium(III) selenide (LDPE/In₂Se₃) in the temperature range of 300–450 K and a frequency range of 0–10¹⁴ Hz. It is revealed that a variation in the filler content and the effect of external factors can yield novel composite materials with desired dielectric characteristics.