Development of core mode blocker with H/sub 2/-loaded Ge-B codoped fibres

A novel fabrication method of the core mode blocker by exposing H/sub 2/-loaded Ge-B codoped fibres to local electric arc discharge for application to the LPFGs-based tunable all-fibre bandpass filter with 6.5 nm bandwidth and 40 nm tuning range is presented.     

A new way for multidimensional medical data management: volume of interest (VOI)-based retrieval of medical images with visual and functional features.

The advances in digital medical imaging and storage in integrated databases are resulting in growing demands for efficient image retrieval and management. Content-based image retrieval (CBIR) refers to the retrieval of images from a database, using the visual features derived from the information in the image, and has become an attractive approach to managing large medical image archives. In conventional CBIR systems for medical images, images are often segmented into regions which are used to derive two-dimensional visual features for region-based queries. Although such approach has the advantage of including only relevant regions in the formulation of a query, medical images that are inherently multidimensional can potentially benefit from the multidimensional feature extraction which could open up new opportunities in visual feature extraction and retrieval. In this study, we present a volume of interest (VOI) based content-based retrieval of four-dimensional (three spatial and one temporal) dynamic PET images. By segmenting the images into VOIs consisting of functionally similar voxels (e.g., a tumor structure), multidimensional visual and functional features were extracted and used as region-based query features. A prototype VOI-based functional image retrieval system (VOI-FIRS) has been designed to demonstrate the proposed multidimensional feature extraction and retrieval. Experimental results show that the proposed system allows for the retrieval of related images that constitute similar visual and functional VOI features, and can find potential applications in medical data management, such as to aid in education, diagnosis, and statistical analysis.     

Efficient design and operation of a data acquisition system for pressurized pipeline systems.

The unsteady flow analysis of pipeline systems provides useful guidelines for implementing data acquisition components such as data filtering ranges, sensor locations and sampling frequencies. A theoretical integration among hydraulics, free vibration analysis and signal processing is proposed for a comprehensive approach aiming at enhanced design and operation of data acquisition system. Transient analysis is performed to extract flow variation by a valve modulation in a pipeline system. Frequency transformation analysis is developed to convert pressure variations between time domain and frequency domain. Free vibration analysis provides spatial distribution of impedance characteristics and pressure variation for determining optimum sensor location. A real-time filter can be designed to secure valid signals of any particular unsteady event. Hypothetical and experimental applications show that the proposed method has potentials of the leakage detection of a pipeline system as well as an efficient design of data acquisition system.     

Ethylene polymerization over MgO‐supported zirconocene catalysts

Supported zirconcene catalysts on a new support, MgO, were prepared and tested in ethylene polymerization. Three types of impregnation methods were employed to find an optimum supporting method for MgO. The direct impregnation of Cp₂ZrCl₂ on MgO showed low metal loading and polymerization activity, while the catalyst had a higher metal loading and polymerization activity when MgO was treated with methylaluminoxane (MAO) before supporting. Treatment of MgO with MAO during the supporting step invoked two types of catalytic sites, which was evidenced by the bimodal molecular weight distribution of the polymer products. MgO is considered to have potential as a support for metallocenes.     

Synthesis of ZSM‐5 Films and Monoliths with Bimodal Micro/Mesoscopic Structures

A route to synthesize ZSM‐5 crystals with a bimodal micro/mesoscopic pore system has been developed in this study; the successful incorporation of the mesopores within the ZSM‐5 structure was performed using tetrapropylammonium hydroxide (TPAOH)‐impregnated mesoporous materials containing carbon nanotubes in the pores, which were encapsulated in the ZSM‐5 crystals during a solid rearrangement process within the framework. Such mesoporous ZSM‐5 zeolites can be readily obtained as powders, thin films, or monoliths.     

Passive alignment method of polymer PLC devices by using a hot embossing technique

A novel fabrication process using a hot embossing technique has been developed for micromechanical passive alignment of polymer planar lightwave circuit (PLC) devices. With only one step of embossing, single-mode waveguide straight channels and micropedestals for passive aligning are simultaneously defined on a polymer thin film with an accuracy of /spl plusmn/0.5 /spl mu/m. This process reduces the steps for fabricating alignment structures. A fabricated polymer PLC chip and fibers are combined on a v-grooved silicon optical bench (SiOB) in a flip-chip manner. The process provides a coupling loss as low as 0.67 dB per coupling face and a cost-effective packaging solution for various polymer PLC devices.     

Scaling planar silicon devices

The generation-over-generation scaling of critical CMOS technology parameters is ultimately bound by nonscalable limitations, such as the thermal voltage and the elementary electronic charge. Sustained improvement in performance and density has required the introduction of new device structures and materials. Partially depleted SOI, a most recent MOSFET innovation, has extended VLSI performance while introducing unique idiosyncrasies. Fully depleted SOI is one logical extension of this device design direction. Gate dielectric tunneling, device self-heating, and single-event upsets present developers of these next-generation devices with new challenges. Strained silicon and high-permittivity gate dielectric are examples of new materials that will enable CMOS developers to continue to deliver device performance enhancements in the sub-100 nm regime.     

Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation

The authors report on the effects of silicon nitride (SiN) surface passivation and high-electric field stress (hot electron stress) on the degradation of undoped AlGaN-GaN power HFETs. Stressed devices demonstrated a decrease in the drain current and maximum transconductance and an increase in the parasitic drain series resistance, gate leakage, and subthreshold current. The unpassivated devices showed more significant degradation than SiN passivated devices. Gate lag phenomenon was observed from unpassivated devices and removed by SiN passivation. However, SiN passivated devices also showed gate lag phenomena after high-electric field stress, which suggests possible changes in surface trap profiles occurred during high-electric field stress test.     

High-performance MIM capacitor using ALD high-k HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectrics

For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz up to 20 GHz, very low leakage current of 3.2 /spl times/ 10/sup -8/ A/cm/sup 2/ at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V/sup 2/, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.     

Transmission performance of 10-Gb/s 1550-nm transmitters using semiconductor optical amplifiers as booster amplifiers

We have demonstrated the transmission performance of 10-Gb/s transmitters based on LiNbO/sub 3/ modulator using semiconductor optical amplifiers (SOAs) as booster amplifiers. Utilizing the negative chirp converted in SOAs and self-phase modulation induced by high optical power, we can successfully transmit 10-Gb/s optical signals over 80 km through the standard single-mode fiber with the transmitter using SOAs as booster amplifiers. SOAs can be used for booster amplifiers with a careful adjustment of the operating conditions. In order to further understand an SOA's characteristics as a booster amplifier, we model SOAs and other subsystems to verify the experimental results. Based on the good agreement between the experimental and simulation results, we can find the appropriate parameters of input signals for SOAs, such as extinction ratio, rising/falling time, and chirp parameter to maximize output dynamic range and available maximum output power (P/sub o,max/).