新一代银行大型机网络接入技术研究

银行大型机网络接入技术的转型是当前一个非常重要的研究与应用课题。文章在成功实现银行大型机网络接入技术转型的基础上,分析了相关新技术,解决了转型中的关键问题,提出并实现了一种稳定高效的银行大型机网络接入技术方案,对银行大型机网络接入技术的转型具有指导意义,对银行信息化技术研究具有重要参考价值。     

中国的主要水问题及水文学的机遇

从水资源开发利用与保护、水旱灾害防治等方面论述中国当前存在的主要水问题：水危机和水浪费同时存在、水污染日趋严重、防洪减灾任重道远、生态环境破坏严重、全球气候变暖产生不利影响；进而论述水文学研究面临的新课题：水文现象的不确定性、人类活动对水文的影响、水位频率计算、水资源开发利用的最佳效应、水资源供需分析、农业节水灌溉机理及水旱灾害的防治，并指出必须加强对这些新课题的研究     

水下封底混凝土与钢护筒粘结力试验

针对吊箱围堰施工中，混凝土与钢板间的粘结力无详实数据的现象，介绍了确定数据的实验模型、实验步骤，并分析了实验结果，以方便施工，指导施工。     

均衡营养早餐的研制

根据膳食营养的要求,以燕麦、爆裂玉米、奶粉、鸡胸肉、胡萝卜和香菜为原料,采用微波技术和冷冻干燥技术生产均衡营养早餐,确定了最佳的配方为燕麦片15g、爆裂玉米8g、奶粉10g、鸡肉丁5g、胡萝卜丁0.5g、香菜干0.5g、盐或糖1g.     

2.5Gb/s和3.125Gb/s速率级0.35μmCMOS限幅放大器

采用了TSMC0.35μm CMOS工艺实现了可用于SONET/SDH2.5Gb/s和3.125Gb/s速率级光纤通信系统的限幅放大器。通过在芯片测试其最小输入动态范围可达8mVp—p，单端输出摆幅为400mVp-p，功耗250mW，含信号丢失检测功能，可以满足商用化光纤通信系统的使用标准。     

基于S-CDMA的HFC上行信道接入协议性能仿真分析

讨论了基于S－CDMA的HFC网上行信道的高效接入协议－SAMA，提出了双信道接入机制的工作原理，并对系统性能进行了分析与计算机仿真，得到一些有意义的结论。     

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.     

发光体MAl2O4:Eu2+,RE3+的长余辉形成机理

提出了Eu^2 激活的MAl2O4:Eu^2 ,RE^3 （M＝Ca,Sr,Ba;RE=Dy,Nd,Ho,Er,Pr,Tb等稀土元素）系列铝酸盐发光体的长余辉发光机理。认为O^2-空位Vo是一种电子俘获陷际，是形成余辉的根本原因，RE^3 的引入使陷阱深度适宜而使余辉时间延长。缺陷在晶格中成簇分布，Vo和碱土金属离子空位VM在高温下可相互缔合。利用电子陷阱模型解释了实验中的一些普遍现象并提出了固相反应法合成此类发光体的工艺改进措施。     

Computer-controlled ion-selective electrode switch

The construction of a microcomputer-controlled electrode switch for use in potentiometric determinations is described. This can be coupled to most of the analytical equipment usually found in laboratories, to enable a setting up of automatic systems capable of performing sequential determinations with several ion-selective electrodes. The assessment of its analytical usage and behaviour are discussed.     

压缩弯曲小半径中频弯管工艺的研究

在分析了感应加热小半径弯管形变机理的基础上，提出了压缩弯曲的成型工艺，研制出了小半径中频弯管设备，并进行了大量的工艺实验和实验研究，取得了满意的结果。