Fast DCT algorithm with fewer multiplication stages

A novel fast DCT scheme with reduced multiplication stages and fewer additions and multiplications is proposed. The proposed algorithm is structured so that most multiplications tend to be performed at the final stage, which reduces the propagation error that could occur in the fixed-point computation. Minimisation of the multiplication stages can further decrease the error     

Model development for multicomponent mass transfer with rapid chemical reactions in a small drop

Multicomponent mass transfer accompanied by instantaneous chemical reactions in a small drop has been modeled and simulated for the case where two different solutes diffuse from a continuous phase into the drop and react rapidly with a third reactant in the drop. The computational results obtained by Galerkin’s finite element method are reported in terms of concentration profiles, the locations of reaction front, the cumulative mass flux, and the enhancement factor. The effects of physical parameters, such as diffusivities of the solutes and the reactant, the interfacial concentration of solutes, and the relative amount of the reactant, on the calculated quantities are discussed.     

ERCP and CT findings of ectopic drainage of the common bile duct into the duodenal bulb

OBJECTIVE: The purpose of this study was to evaluate ERCP and CT findings of ectopic drainage of the common bile duct into the duodenal bulb. CONCLUSION: Although rare, the diagnosis of ectopic drainage of the common bile duct into the duodenal bulb is important to prevent inadvertent damage during biliary tract or gastric surgery and to clarify the cause of chronic peptic ulcers.     

1.04 GBd low EMI digital video interface system using small swingserial link technique

In a high-resolution flat panel system, a conventional interface that directly connects a liquid crystal display (LCD) controller to a flat panel cannot overcome the problems of excess EMI (electromagnetic interference) and power caused by full-swing transmission signals in parallel lines. This paper presents a high-speed digital video interface system implemented with a low-cost standard CMOS (complimentary metal-oxide-semiconductor) technology that can mitigate EMI and power problems in high-resolution flat panel display systems. The combined architecture of the high-speed, small number of parallel lines and low-voltage swing serial interface can support resolutions from VGA (640×480 pixels) up to XGA (1024×768 pixels) with significant power improvement and drastic EMI reduction. To support high-speed, low-voltage swing signaling and overcome channel-to-channel skew problems, a robust data recovery system is required. The proposed digital phase-locked loop enables robust skew-insensitive data recovery of up to 1.04 GBd     

Tunneling spectroscopy of palladium-barium emitters

The surface of a palladium-barium cathode was studied using scanning probe microscopy techniques. Data from the tunneling spectroscopy showed the pattern of the electron work function distribution over a microscopic region on the emitter surface. This pattern is compared to the distribution of various phases in the palladium-barium alloy employed.     

Strong Diffie-Hellman-DSA Key Exchange

To provide authentication to the Diffie-Hellman key exchange, a few integrated key exchange schemes which provide authentication using the DSA signature have been proposed in the literature. In this letter we point out that all of the previous Diffie-Hellman-DSA schemes do not provide security against session state reveal attacks. We also suggest a strong Diffie-Hellman-DSA scheme providing security against session state reveal attacks as well as forward secrecy and key independence     

A study on UV-curable coatings for HD-DVD: Primer and top coats

This study relates to the development of coatings for optical discs in high-density digital versatile disc systems (HD-DVD or blue lay disk) that use a high numerical aperture of 0.85 at 405 nm wavelength and have a protective top layer over a primer layer for protection against damage and dust. Ultraviolet-curable raw materials of two acrylic monofunctional monomers ( isobornylacrylate, IBA and tetrahydrofurfurylacrylate, THFA) and two kinds of urethaneacrylate oligomers (OUMD and OUME) have been easily mixed with photoinitiators. Curing rate of these materials was characterized by FT-IR. In case of top coats, VTES (vinyltriethoxysilane) and acrylic acid were added to enhance the abrasion resistance. These two kinds of UV-curable resinous materials having no solvent were synthesized and investigated as means for making a blue ray disk having good optical and mechanical properties. In addition, dynamic characteristics including reflectivity, fluctuation of RF signal and noise level were also investigated.     

Damaged layer characteristics in micro-endmilling of copper using an ultrahigh-speed air spindle

This paper presents an investigation on the characteristics of damaged layer in micro-machining by using the ultrahigh-speed air spindle. The damaged layer in metal cutting is derived from plastic deformation and transformation of metal structure. In this study, micro-cutting force, surface roughness, and plastic deformation layer according to the variation of machining conditions were investigated by experiments. The damaged layer was measured using optical microscope for the samples prepared by metallographic techniques. Its scale was dependent on cutting process parameters, especially feed per tooth. According to experimental results, it was verified that the thickness of damaged layer was increased with increasing of feed per tooth and cutting depth, also thickness of damaged layer was reduced in down-milling compared to upmilling during micro-endmilling operation.     

Determinants of Corporate R&D Investment: An Empirical Study Comparing Korea's IT Industry with Its Non‐IT Industry

In our study, we extracted the market, finance, and government factors determining R&D investment of individual firms in the IT industry in Korea. We collected the financial data of 515 individual firms belonging to IT and non‐IT industries between 1980 and 1999 from the Korea Investors Service's database and investigated the empirical relationship between the factors using an ordinary regression model, a fixed effects model, and a random effects model. The main findings of our study are as follows: i) The Herfindahl Index variable representing the degree of market concentration is statistically insignificant in explaining R&D expenditures in the IT manufacturing industry. ii) Assets, which is used as a proxy variable for firm size, have a positive and statistically significant coefficient. These two results suggest that the Schumpeterian Hypothesis may be only partially applied to the IT manufacturing industry in Korea. iii) The dividend variable has a negative value and is statistically significant, indicating that a tendency of high dividends can restrict the internal cash flow for R&D investment. iv) The sales variable representing growth potential shows a positive coefficient. v) The subsidy as a proxy variable for governmental R&D promotion policies is positively correlated with R&D expenditure. This suggests that government policy has played a significant role in promoting R&D activities of IT firms in Korea since 1980. vi) Using a dummy variable, we verified that firms reduced their R&D investments to secure sufficient liquidity under the restructuring pressure during Korea's 1998 and 1999 economic crisis.     

Bias-temperature instabilities of polysilicon gate HfO/sub 2/ MOSFETs

Bias-temperature instabilities (BTI) of HfO/sub 2/ metal oxide semiconductor field effect transistors (MOSFETs) have been systematically studied for the first time. NMOS positive BTI (PBTI) exhibited a more significant V/sub t/ instability than that of PMOS negative BTI (NBTI), and limited the lifetime of HfO/sub 2/ MOSFETs. Although high-temperature forming gas annealing (HT-FGA) improved the interface quality by passivating the interfacial states with hydrogen, BTI behaviors were not strongly affected by the technique. Charge pumping measurements were extensively used to investigate the nature of the BTI degradation, and it was found that V/sub t/ degradation of NMOS PBTI was primarily caused by charge trapping in bulk HfO/sub 2/ rather than interfacial degradation. Deuterium (D/sub 2/) annealing was found to be an excellent technique to improve BTI immunity as well as to enhance the mobility of HfO/sub 2/ MOSFETs.