Finishing of glass-ionomer cement (SEM study)

A total of 12 glass-ionomer cement specimens were utilized in the present study. The specimens were divided into two equal groups. The first group was used after 10 minutes from setting, while the second was utilized after 24 hours from setting. Each group was divided into three equal subgroups (2 specimens each). The first subgroups were finished under wet condition (wet finished). The second subgroups were dry finished. On the other hand, the third subgroups were kept undisturbed (as set) under mylar strips. The specimens surfaces were then examined by a Scanning Electron Microscope (SEM). It was found that, finishing of the specimens after 24 hours from setting demonstrated more acceptable surface topography either in wet or dry conditions than finishing after 10 minutes from setting. Moreover, the dry finished specimens displayed more acceptable surface topography than the wet finished specimens. On the other hand, the as set (undisturbed) specimens the most acceptable surface topography.     

A novel interference suppression scheme for global navigation satellite systems using antenna array

This paper considers interference suppression and multipath mitigation in Global Navigation Satellite Systems (GNSSs). In particular, a self-coherence anti-jamming scheme is introduced which relies on the unique structure of the coarse/acquisition (C/A) code of the satellite signals. Because of the repetition of the C/A-code within each navigation symbol, the satellite signals exhibit strong self-coherence between chip-rate samples separated by integer multiples of the spreading gain. The proposed scheme utilizes this inherent self-coherence property to excise interferers that have different temporal structures from that of the satellite signals. Using a multiantenna navigation receiver, the proposed approach obtains the optimal set of beamforming coefficients by maximizing the cross correlation between the output signal and a reference signal, which is generated from the received data. It is demonstrated that the proposed scheme can provide high gains toward all satellites in the field of view, while suppressing strong interferers. By imposing constraints on the beamformer, the proposed method is also capable of mitigating multipath that enters the receiver from or near the horizon. No knowledge of either the transmitted navigation symbols or the satellite positions is required.     

KINEMATIC VISCOSITY-TEMPERATURE BEHAVIOR OF HEAVY TBP-FRACTIONS (455°C+) OF ARABIAN CRUDE OILS

A generalized kinematic viscosity-temperature correlation for undefined liquid heavy petroleum fractions has been developed to represent the data for a wide range of temperature from 100°C to 200°C. The correlation is based on the experimental kinematic viscosity data of true boiling point fractions of four Arabian crude oils. The characterization property required for estimation is 50% boiling point. The proposed correlation fits the experimental data with an overall absolute error of 6.1%. Experimental measurements of kinematic viscosity of heavy true boiling point fractions of Arabian crude oils were also obtained in order to develop the proposed correlation.     

An extended minimax disparity to determine the OWA operator weights

This paper contributes to extend the minimax disparity to determine the ordered weighted averaging (OWA) model based on linear programming. It introduces the minimax disparity approach between any distinct pairs of the weights and uses the duality of linear programming to prove the feasibility of the extended OWA operator weights model. The paper finishes with an open problem.     

某水库试验段区域地下水位动态特征与影响因素

研究某水库蓄水对区域地下水动态的影响,以期为水库后期建设以及区域水资源管理提供相关科学依据。通过建立水库试验段气象-地下水监测系统,运用M-K趋势分析法分析研究区地下水位动态特征,选用变异系数法分析地下水位的时空间变异特征,采用灰色关联度法揭示其主导影响因子。结果表明:水库试验段地下水位整体表现为上升趋势且具有明显的丰枯特征,升幅约为0.5～2.0m/a;试验段渗漏量与地下水位变化呈负相关关系,渗漏对地下水位的影响存在一定空间差异,即对东部地下水位的影响大于西部;西部地下水位的主导影响因子为降雨量,东部地下水位的主导影响因子为渗漏量和降雨量。     

Smart home security: challenges,issues and solutions at different IoT layers

The Journal of Supercomputing - The Internet of Things is a rapidly evolving technology in which interconnected computing devices and sensors share data over the network to decipher different...     

Preparation of heavily dopedn-type Ge-Si thermoelectric alloys

Germanium-silicon alloys doped with phosphorus were prepared in vacuum by rapidly pouring the molten alloy into cooled copper moulds containing the phosphorus dopant. Without any further treatment, the ingots are milled into powder of grain size (L 5 µm) and hot pressed. It is shown that a high degree of homogenization of the alloy constituents can be obtained in the final compacts, thus eliminating the need for zone-levelled starting material. It is also shown that this work is in agreement with the plastic flow model of sintering known as the Mackenzie-Shuttleworth-McClelland model. Electrical measurements indicate that the dopant is effectively and uniformly incorporated into the alloy.     

Thermoelectric properties of fine grained (75% Sb2Te3-25% Bi2Te3)p-type and (90% Bi2Te3-5% Sb2Te3-5% Sb2Se3)n-type alloys

The thermoelectric properties of fine-grained alloys prepared by either cold pressing and sintering or hot pressing in the range 5–50 m are compared with single-crystal best-direction values. It is shown that for thep-type alloy, almost the entire thermoelectric properties are recovered, i.e. the figure of merit for the finest grain size is almost the same as the best single-crystal value. The same trend is observed in then-type alloy except that 90% of the single-crystal figure of merit is recovered. These results are discussed in terms of a model which suggests that degradation of favourable thermoelectric properties by powdering the alloys is compensated by (1) decrease of thermal conductivity due to scattering of phonons at grain boundaries for grain sizes that are comparable to the mean free path of phonons; and (2) retention of some of the anisotropic properties of the single crystal in the fine-grained compacts.     

Design of Dual-Gate P-type IMOS Based Industrial Purpose Pressure Sensor

Silicon - In this treatise, we have proposed a Single Material Gate–Dual Gate Impact Ionization Metal Oxide Semiconductor (SMG DG-IMOS) based Pressure Sensor. The pressure sensor has the most...     

Enhancing the design and performance of a gate-all-around (GAA) charge plasma nanowire field-effect transistor with the help of the negative-capacitance technique

A gate-all-around charge plasma nanowire field-effect transistor (GAA CP NW FET) device using the negative-capacitance technique is introduced, termed the GAA CP NW negative-capacitance (NC) FET. In the face of bottleneck issues in nanoscale devices such as rising power dissipation, new techniques must be introduced into FET structures to overcome their major limitations. Negative capacitance is an efficient effect that can be incorporated into a device to enhance its performance for low-power applications and help to reduce the operating voltage. The Landau–Khalatnikov equation can be applied in such cases to obtain the effective bias. To determine the effects of negative capacitance, lead zirconate titanate (PZT) ferroelectric material, a ceramic material with perovskite properties, is adopted as a gate insulator. This approach diminishes the supply voltage and reduces the power dissipation in the device. Excluding their polarization properties, ferroelectric materials are similar to dielectric materials, and PZT offers abundant polarization with improved reliability and a higher dielectric capacitance. Without proper tuning of the thickness of the PZT material, hysteresis behavior mat occur. Hence, the thickness of the PZT material (t_FE) is an essential parameter to optimize the device performance and achieve a reduced threshold voltage for the GAA CP NW NC-FET device proposed herein. Furthermore, varying the thickness of the PZT ferroelectric material can also enhance the performance. When using the highest values of t_FE, improved outcomes with an analogously lower operating voltage are observed. The effects of varying t_FE on the performance characteristics of the device including the drain current, transconductance, polarized charge, etc. are also interpreted herein.