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991.
A discrete replacement model for a repairable system which is subject to shocks and minimal repairs is discussed. Such shocks can be classified, depending on its effect to the system, into two types: Type I and Type II shocks. Whenever a type II shock occurs causes the system to go into failure, such a failure is called type II failure and can be corrected by a minimal repair. A type I shock does damage to the system in the sense that it increases the failure rate by a certain amount and the failure rate also increases with age due to aging process without external shocks; furthermore, the failure occurred in this condition is called type I failure. The system is replaced at the time of the first type I failure or the n-th type Il failure, whichever occurs first. Introducing costs due to replacement and mininal repairs, the long-run expected cost per unit time is derived as a criterion of optimality and the optimal number n∗ found by minimizing that cost. It is shown that, under certain conditions, there exists a finite and unique optimal number n∗. 相似文献
992.
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994.
介绍了灯饰横梁零件成形工作过程及工艺过程,对灯饰横梁零件压形整形复合模作了较详细介绍,对生产类似产品的厂家有一定的参考应用价值。 相似文献
995.
制备出以混合氧化物为载体的固载杂多酸盐催化剂TiSiW1 2 O4 0 /TiO2 -SnO2 ,以油酸和正丁醇为原料 ,系统研究了催化合成油酸丁酯的影响因素 ,确定了该反应的优化条件 :醇酸摩尔比为 2∶1,催化剂用量为反应物总质量的 1 5 % ,反应时间 60min ,反应温度 13 0~ 14 0℃。在此反应条件下 ,油酸丁酯的收率达到 90 8%。 相似文献
996.
997.
Lih-Gen Sheu Kai-Ping Chuang Y. Lai 《Photonics Technology Letters, IEEE》2003,15(7):939-941
We theoretically demonstrate that a high-quality fiber Bragg grating dispersion compensator can be fabricated by a properly designed single-period overlap-step-scan exposure method. A practical design example and a detailed tolerance analysis of this new fabrication method are given. 相似文献
998.
Chang S.J. Chen C.H. Su Y.K. Sheu J.K. Lai W.C. Tsai J.M. Liu C.H. Chen S.C. 《Electron Device Letters, IEEE》2003,24(3):129-131
GaN Schottky diodes were built internally inside the GaN green LEDs by using etching and redeposition techniques. By properly selecting the etching areas underneath the bonding pads, one can minimize the optical loss due to the etching process. Although the reverse current and the forward turn-on voltage were both higher for the GaN LED with a Schottky diode, it was found that the internal Schottky diode could significantly increase the electrostatic discharge threshold from 450 to 1300 V. 相似文献
999.
Electrothermal coupling analysis of current crowding and Joule heating in flip-chip packages 总被引:1,自引:0,他引:1
Solder bumps serve as electrical paths as well as structural support in a flip-chip package assembly. Owing to the differences of feature sizes and electric resistivities between a solder bump and its adjacent traces, current densities around the regions where traces connect the solder bump increase in a significant amount. This current crowding effect along with the induced Joule heating would accelerate fatigue failure due to electromigration. In this paper we apply the three-dimensional electrothermal coupling analysis to investigate current crowding and Joule heating in a flip-chip package assembly carrying different constant electric currents under different ambient temperatures. Experiments are conducted to calibrate temperature-dependent electric resistivities of solder alloy, Al trace, and Cu trace, and to verify the numerical model by comparing calculated and measured maximum temperatures on the die surface. Through the electrothermal coupling analysis, effects of current crowding and Joule heating induced by different solder bump structures are examined and compared. 相似文献
1000.