含氮金刚石结构中Jahn-Teller畸变效应的计算

研究了由J.Bourgoin和M.Lannoo提出的半导体内Jahn-Teller畸变效应的计算理论。应用Bourgoin和Lannoo的方法研究了含中心氮杂质金刚石结构的Jahn-Teller畸变问题,计算了34C+N簇团的T2模耦合沿%111&晶向的Jahn-Teller畸变效应,结果与实验相符。     

Analysis and optimization of DS-CDMA systems with time-limited partial response chip waveforms

Conventional direct sequence code division multiple access systems (DS-CDMA) using offset quadrature phase shift key (OQPSK) usually employ a strictly bandlimited partial response square-root raised cosine pulse as the chip waveform. They have the disadvantage of large envelope fluctuation that will incur performance degradation due to the intermodulation and bandwidth enlargement caused by post nonlinear processing. To improve the performance of DS-CDMA systems, the chip waveform and receiver should be properly selected. This paper presents a systematic performance analysis of a matched filter receiver and zero-forcing filter (ZF) receiver for DS-CDMA using a time-limited partial response chip waveform. Nevertheless the systematic performance analysis is applicable to bandlimited chip pulse as well. For the zero-forcing filters, we propose to select the frequency responses that satisfy the first Nyquist criterion. With this class of filters, we can choose the roll-off factor to minimize the total power of multiple access interference and noise power. The zero-forcing filter with proper choice of roll-off factor, referred to as optimum ZF, yields a performance better than the matched filter counterpart. The bit error rate (BER) performance of the optimum ZF with superposed quadrature amplitude modulation signal as the time pulse waveform is evaluated. It is shown that the optimum ZF provides better BER performance than conventional OQPSK and minimum shift keying, and its envelope uniformity is much better than that of OQPSK.     

低阻VDMOSFET的优化设计与制造

文章对9926型双N沟增强型VDMOSFET进行了结构和版图的优化设计。给出了该器件的纵横向结构参数,材料的物理参数和版图总体结构。单胞结构的优化设计使单胞密度达到204万个/cm2,比国际市场现有产品的单胞密度(156万个/cm2)提高了30%。这种设计采用浅n+注入工艺可使器件生产成本下降31%。最后对研制结果进行了分析讨论。     

超临界流体萃取技术生产重交通道路沥青的研究

研究了采用超临界流体萃取技术(SFEF),以减压渣油和催化裂化油浆为原料,制备重交通道路沥青产品的可行性.结果表明:当原料中油浆掺入量为10%～30%时,可以生产出牌号为AH70,AH90,AH110的重交通道路沥青产品.工业试验表明,生产牌号为AH70,AH90的重交通道路沥青,采用此技术方案是可行的.     

Performance and Commercial Application of the Promoter LCC-A for Maximization of Propylene Yield

1 Introduction Propylene as an important feedstock for organic chemicals is mainly originated from steam cracking and catalytic cracking processes. During the FCC process the propylene content varies with the FCC catalyst and process technology adopted, resulting in significant difference in propylene concentration in the cracked product——LPG. The conventional FCC pro- cess generally gives a propylene yield of around 4%, while the FCC process with maximization of propylene yield can in…     

XMAC纵波时差高分辨率处理方法

在充分调研阵列声波测井分波提取方法的基础上，针对阿特拉斯公司的交叉多极子阵列声波测井（XMACⅡ）提供的单极波形信息，研究纵波时差提取及高分辨率处理方法。首先利用相关-互功谱法高精度地提取纵波时差，然后针对XMACⅡ仪器的接收阵列，研究组合子阵列的方法，形成共发射子阵列和共接收子阵列，最后利用子阵列对提取的纵波时差做高分辨率处理。处理现场实际测井资料，并将高分辨率处理成果与引进的eXpress软件处理成果、实测的国产高分辨率声波（纵波）测井曲线及岩心纵波时差对比分析，表明该方法提取的纵波时差曲线的纵向分辨率有很大提高，时差计算准确可靠，提取的单极纵波时差与国产高分辨率声波时差及岩心纵波时差的平均相对误差均小于7%。该方法具有较高的实用价值和广阔的应用前景。     

廊固凹陷大兴断层对油气分布的控制研究

廊固凹陷断裂系统复杂，其中大兴断层是中西部的控盆边界断层，它通过对凹陷的构造样式、沉积特征的控制进而影响整个凹陷的油气分布。从区域构造背景和盆地的沉积演化角度，按不同段落断裂展布的方向、产状的陡缓、对沉积的控制作用以及不同层段物质组份的差异，将大兴断层划分为4段：北段、中北段、中南段和南段，各段又可进一步分为上下不同的两段。各段断层的结构、形态、伴生构造、活动时间等都存在较明显差异，通过控制物源而控制沉积相的展布、储层物性和生储盖组合。相应的伴生构造和沉积物发育特征导致构造、构造-岩性组合控制了油气的分布：北段下段、中北段下段近湖一侧是廊固凹陷中西部有利的油气聚集带；中北段上段发育的生物气藏具有一定的勘探前景。     

四川盆地及邻区上二叠统一下三叠统海槽的深水沉积特征

四川盆地及邻区广元-旺苍、城口-鄂西、开江-梁平海槽是上二叠统一下三叠统飞仙关组（P3-T1f）的深水碳酸盐沉积区。该区上二叠统上部大隆组是硅质岩、硅质泥岩、硅质灰岩组合，含放射虫、有孔虫等化石，厚125—29．0m，为海槽裂陷期凝缩沉积。三叠系飞仙关组下部为远洋沉积的暗色泥岩、微晶碎屑灰岩和重力流沉积的浊积岩、角砾灰岩组成的深水碳酸盐沉积，厚50．0～300．0m，是裂陷期后的海槽充填沉积。海槽相区沉积在晚二叠统世末达到最大海泛面沉积了大隆组。海平面缓慢下降期沉积了补偿充填性质的飞仙关组深水碳酸盐岩。海槽相区上二叠统一下三叠统飞仙关组构成了一个完整的三级层序。深水沉积物的有机碳平均值高达6．21％，是良好的烃源岩。但在海槽相区上二叠统不发育生物礁，飞仙关组缺乏鲕粒岩。     

几何变奏曲

准确把握物体的轮廓，最正确的方法是先用几何构图定形，这是对复杂形体的简化和概括。本案的设计初衷就是想借几何形的纯粹和洗练来打造空间。     

A high-performance multichannel dual-gate poly-Si TFT fabricated by excimer laser irradiation on a floating a-Si thin film

A new excimer laser annealing (ELA) process that uses a floating amorphous-Silicon (a-Si) thin film with a multichannel structure is proposed for high-performance poly-Si thin-film transistors (TFTs). The proposed ELA method produces two-dimensional (2-D) grain growth, which can result in a high-quality grain structure. The dual-gate structure was employed to eliminate the grain boundaries perpendicular to the current flow in the channel. A multichannel structure was adapted in order to arrange the grain boundary to be parallel to the current flow. The proposed poly-Si TFT exhibits high-performance electrical characteristics, which are a high mobility of 504 cm/sup 2//Vsec and a low subthreshold slope of 0.337 V/dec.