Room-temperature high on/off ratio in suspended graphene nanoribbon field-effect transistors

We have fabricated suspended few-layer (1-3 layers) graphene nanoribbon field-effect transistors from unzipped multi-wall carbon nanotubes. Electrical transport measurements show that current annealing effectively removes the impurities on the suspended graphene nanoribbons, uncovering the intrinsic ambipolar transfer characteristic of graphene. Further increasing the annealing current creates a narrow constriction in the ribbon, leading to the formation of a large bandgap and subsequent high on/off ratio (which can exceed 10(4)). Such fabricated devices are thermally and mechanically stable: repeated thermal cycling has little effect on their electrical properties. This work shows for the first time that ambipolar field-effect characteristics and high on/off ratios at room temperature can be achieved in relatively wide graphene nanoribbons (15-50 nm) by controlled current annealing.     

Periodically porous top electrodes on vertical nanowire arrays for highly sensitive gas detection

Nanowires of various materials and configurations have been shown to be highly effective in the detection of chemical and biological species. In this paper, we report a novel, nanosphere-enabled approach to fabricating highly sensitive gas sensors based on ordered arrays of vertically aligned silicon nanowires topped with a periodically porous top electrode. The vertical array configuration helps to greatly increase the sensitivity of the sensor while the pores in the top electrode layer significantly improve sensing response times by allowing analyte gases to pass through freely. Herein, we show highly sensitive detection to both nitrogen dioxide (NO(2)) and ammonia (NH(3)) in humidified air. NO(2) detection down to 10 parts per billion (ppb) is demonstrated and an order-of-magnitude improvement in sensor response time is shown in the detection of NH(3).     

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

This review article summarized the recent understanding of resistance switching (RS) behavior in several binary oxide thin film systems. Among the various RS materials and mechanisms, TiO(2) and NiO thin films in unipolar thermo-chemical switching mode are primarily dealt with. To facilitate the discussions, the RS was divided into three parts; electroforming, set and reset steps. After short discussions on the electrochemistry of 'electrolytic' oxide materials, the general and peculiar aspects of these RS systems and mechanism are elaborated. Although the RS behaviors and characteristics of these materials are primarily dependent on the repeated formation and rupture of the conducting filaments (CFs) at the nanoscale at a localized position, this mechanism appears to offer a basis for the understanding of other RS mechanisms which were originally considered to be irrelevant to the localized events. The electroforming and set switching phenomena were understood as the process of CF formation and rejuvenation, respectively, which are mainly driven by the thermally assisted electromigration and percolation (or even local phase transition) of defects, while the reset process was understood as the process of CF rupture where the thermal energy plays a more crucial role. This review also contains several remarks on the outlook of these resistance change devices as a semiconductor memory.     

Effect of adding Ce on interfacial reactions between Sn–Ag solder and Cu

We investigated the effect of adding cerium (Ce) to low Ag content Sn–1.0wt.%Ag solder on the interfacial reactions between the Sn–1.0Ag solder and Cu substrate. The formation and growth of interfacial intermetallic compounds (IMCs) between the Sn–1.0Ag–0.3Ce solder and Cu substrate were studied and the results were compared to those obtained for the Ce-free Sn–1.0Ag/Cu and most promising Sn–3.0Ag–0.5Cu/Cu systems. The addition of Ce to the Sn–Ag solder significantly reduced the growth of the interfacial Cu–Sn IMCs, retarded the interfacial reactions between the solder and the substrate, and prevented the IMC from spalling from the interface. The Sn–1.0Ag–0.3Ce solder alloy had a good interfacial stability with the Cu substrate during solid-state isothermal aging in the viewpoint of IMC growth.     

Preparation of CuIn1−xGaxSe2 thin films by sputtering and selenization process

CuIn_1−xGa_xSe₂ polycrystalline thin films were prepared by a two-step method. The metal precursors were deposited either sequentially or simultaneously using Cu–Ga (23 at%) alloy and In targets by DC magnetron sputtering. The Cu–In–Ga alloy precursor was deposited on glass or on Mo/glass substrates at either room temperature or 150°C. These metallic precursors were then selenized with Se pellets in a vacuum furnace. The CuIn_1−xGa_xSe₂ films had a smooth surface morphology and a single chalcopyrite phase.     

High cell density culture of Anabaena variabilis using repeated injections of carbon dioxide for the production of hydrogen

Cyanobacteria have the unique characteristic of using CO₂ in the air as a carbon source and solar energy as an energy source. Reducing equivalents from the fermentation of carbohydrates are used as the primary electron donors in cyanobacteria for the hydrogen producing enzymes. The cells take up CO₂ first to produce cellular substances, which are subsequently used for H₂ production. Since the optimal operating conditions for the CO₂ uptake and H₂ production are different, a two-stage system can be effectively employed to separate these two phases. In this study, for the efficient production of H₂ in the second stage, the conditions for the effective CO₂ uptake and cell growth in the first stage were characterized, and high cell density culture was carried out using repeated injections of CO₂. The specific growth rate and growth yield based on CO₂ decreased with an increase in light intensity or CO₂ concentration. However, the effect of CO₂ concentration on the growth yield was much smaller than that of a light intensity. A CO₂ uptake rate per unit cell decreased linearly with the initial CO₂ concentration in the gas phase. With repeated injections of CO₂, the CO₂ was continuously consumed and the cell concentration reached 3.7 g dry cell/l in 20 days, which is 6.7 times higher than that in a batch culture without further supply of CO₂. The CO₂ injection in the cell growth phase increased not only the cell concentration but also the hydrogen production per gram cell.