Identification of the adverse effect of nitrate on the phosphate release rate and improvement of EBPR process models.

The adverse effect of nitrate on the phosphate release rate in the anaerobic phase was observed and was hardly explainable with conventional EBPR process models. Four possible mechanisms were proposed including substrate competition, reduced fermentation, parallel reaction and sequential reaction. Batch experiments were designed and conducted to identify the dominant mechanism. Results showed that the sequential reaction was the only possible mechanism where only denitrification occurred if any nitrate existed in the anaerobic phase. Then the phosphate release following after the nitrate was completely removed. Nitrate inhibition effect was added into the PHA storage rate to incorporate the sequential reaction in the conventional ASM3 plus EAWAG bio-P module (ASM3 + P). Nitrate inhibition coefficient, K(I,NO,PAO) was found to be as low as 0.05 mg/L. This correlated well with experimental observation where no also meant that the anaerobic compartment of a continuous flow reactor could be seriously affected by the residual nitrate contained in the sludge recycle flow. This phenomenon caused overestimation of the phosphate uptake rate and consequently underestimation of PO4(3-) -P concentration. This problem was resolved by incorporation of a nitrate inhibition term in the ASM3 + P for more accurate simulation of the EBPR process.     

Sensor guided handling and assembly of active micro-systems

Positioning accuracies in the range of a few micrometers and below are necessary for the assembly of active micro-systems. In order to reach these accuracies, an assembly system for sensor guided micro-assembly is developed in the Collaborative Research Centre 516 “Design and manufacturing of active micro-systems”. The combination of a parallel robot with an integrated 3D vision sensor and a micro-gripper enables to reach relative positioning accuracies below 1 μm.     

Comprehensive heat exchange model for a semiconductor laser diode

By measuring the total energy flow from an optical device, we can develop new design strategies for thermal stabilization. Here we present a comprehensive model for heat exchange between a semiconductor laser diode and its environment that includes the mechanisms of conduction, convection, and radiation. We perform quantitative measurements of these processes for several devices, deriving parameters such as a laser's heat transfer coefficient, and then demonstrate the feasibility of thermal probing for the nondestructive wafer-scale characterization of optical devices.     

Experimental studies of the bond response of three-wire strands and some influencing parameters

The bond behavior of prestressing strands is of great importance for the capacity of precast prestressed concrete structures. In the present study, the bond behavior of three-wire strands, and some influencing parameters, were examined by means of steel encased pull-through and push-in tests. The three mechanisms: adhesion, friction and other mechanical actions were found to be present at the strand-concrete interface at different slip values. The results from the experiments showed that the micro roughness of the strand surface strongly affected the initial bond response of the strand, that is the adhesion in the interface. The maximum bond capacity of indented three-wire strands was found to be directly connected to the geometric properties of the strand indents. The influence of the concrete strength on the bond capacity of the strand was hard to interpret. However, the density of the concrete matrix was found to be a better parameter for determine the influence of the concrete rather than the compressive strength.     

High-resolution images from low-resolution compressed video

Surveys the field of super resolution (SR) processing for compressed video. The introduction of motion vectors, compression noise, and additional redundancies within the image sequence makes this problem fertile ground for novel processing methods. In conducting this survey, though, we develop and present all techniques within the Bayesian framework. This adds consistency to the presentation and facilitates comparison between the different methods. The article is organized as follows. We define the acquisition system utilized by the surveyed procedures. Then we formulate the HR problem within the Bayesian framework and survey models for the acquisition and compression systems. This requires consideration of both the motion vectors and transform coefficients within the compressed bit stream. We survey models for the original HR image intensities and displacement values. We discuss solutions for the SR problem and provide examples of several approaches.     

High slew-rate CMOS operational amplifier

A 0.8 /spl mu/m CMOS operational amplifier configuration with a slew rate in excess of 2 V/ns and a unity gain bandwidth of 55 MHz with a load capacitance of 15 pF is proposed. This employs a dynamic technique that turns on a large current source when the rate of change of input is larger than a pre-decided value.     

Metalorganic chemical vapor deposition of silver thin films for future interconnects by direct liquid injection system

Deposition of Ag films by direct liquid injection-metal organic chemical vapor deposition (DLI-MOCVD) was chosen because this preparation method allows precise control of precursor flow and prevents early decomposition of the precursor as compared to the bubbler-delivery. Silver(I)-2,2-dimethyl-6,6,7,7,8,8,8-heptafluoro-3,5-octanedionato-triethylphosphine [Ag(fod)(PEt₃)] as the precursor for Ag CVD was studied, which is liquid at 30 °C. Ag films were grown on different substrates of SiO₂/Si and TiN/Si. Argon and nitrogen/hydrogen carrier gas was used in a cold wall reactor at a pressure of 50–500 Pa with deposition temperature ranging between 220 °C and 350 °C. Ag films deposited on a TiN/Si diffusion barrier layer have favorable properties over films deposited on SiO₂/Si substrate. At lower temperature (220 °C), film growth is essentially reaction-limited on SiO₂ substrate. Significant dependence of the surface morphology on the deposition conditions exists in our experiments. According to XPS analysis pure Ag films are deposited by DLI-MOCVD at 250 °C by using argon as carrier gas.     

The anisotropic effect of a weak magnetic field on the photoconductivity of C<Subscript>60</Subscript> single crystals

The effect of crystal orientation on the photogeneration of free charge carriers was studied for C₆₀ single crystals in a weak magnetic field. The photoconductivity sharply depends on the orientation of magnetic field with respect to the crystallographic directions, showing a 5–8% increase for seven axes of the C₆₀ crystal.