±1100kV特高压直流换流阀能量泄放过程及相关影响因素

换流阀是实现高压直流输电的核心设备,在闭锁检修过程中换流阀残留能量泄放时间直接影响着故障后恢复供电时间长短,对电网运行可靠性具有重要意义。根据换流站的实际结构,搭建单极直流输电系统EMTDC/PSCAD仿真模型,对换流阀中各关键元件的电场和磁场能量泄放过程进行了研究,并对换流站残余能量主要的影响因素进行分析。研究结果表明：晶闸管吸收电容储存的电场能是换流阀闭锁后阀厅残余能量主要来源,该部分能量衰减时间大于7 s,主要泄放通道为直流出线接地开关和换流变阀侧接地开关;仅采用4把接地开关同样能够在3 s内将换流阀电压降低至36 V以下,这为下一步换流站接地开关配置方式的研究提供了技术支撑。     

极间短路条件下柔性直流输电系统电磁暂态特性分析

以南澳±160kV中压柔性直流系统为例,配合直流断路器的应用,利用PSCAD/EMTDC仿真软件分析了极间短路故障时系统的暂态特性。首先介绍了南澳直流工程的系统拓扑和主回路参数,然后结合不同保护策略分析了系统对直流断路器的参数要求,提出了系统与断路器配合时直流限流电抗的调整思路。最后研究了线路长度、故障位置和断路器动作对暂态特性的影响。仿真结果表明,直流断路器可以快速开断故障电流,限制电流峰值,通过调整直流限流电抗可以实现系统与断路器的配合。研究结果对柔性直流输电系统参数设置和器件及设备选型有一定参考价值。     

原位生成纳米SiO_2/环氧聚酯改性有机硅耐电晕无溶剂漆的性能研究

采用原位生成的纳米SiO2/环氧聚酯改性有机硅树脂制备了TH1178-2耐电晕无溶剂绝缘漆,并与采用直接掺杂法制备的纳米SiO2改性有机硅耐电晕漆TH1178-1的耐电晕性能进行了比较分析。结果表明:原位生成纳米SiO2改性比纳米SiO2直接掺杂改性的粒子分散更加均匀,无明显颗粒团聚现象;TH1178-2耐电晕漆比TH1178-1的耐电晕时间增长幅度更明显,耐电晕性能更好,同时具有优良的电气性能和力学性能,适用于H级以上电机或电器的耐电晕绝缘结构浸渍处理。     

二次设备对时防抖技术及时间同步监测方案

智能变电站全站二次设备的同步及采样等工作依赖于站内统一授时装置,这既要求授时装置输出的时间信息精确、稳定,同时也要求被授时装置能够正确的处于相对应的同步状态。重点介绍了智能变电站的二次设备基于FPGA的防抖技术,并介绍了二次设备时间同步监测方案,详细阐述了监测方案的上送流程及评估手段,并给出了安全工作的合理化建议,为解决智能变电站当前时间同步体系处于开环非反馈状态提供参考。     

110kV变压器中性点雷击闪络故障分析及防治措施

为获得雷电流冲击下110 k V变压器不接地中性点上的过电压,采用线饼模型对110 k V变压器绕组进行建模,并用PSCAD仿真软件对该模型进行仿真计算。利用该模型对广州地区110 k V变压器中性点击穿事故进行仿真分析,结果表明对变压器中性点仅加装放电间隙不足以防止雷电侵害,并且雷电波入侵变压器时中性点故障率高达到0.686次/年,说明需要结合其他防护措施对这一地区变压器中性点进行保护。根据仿真结果提出采用130 mm的间隙并联Y1.5W-72/186避雷器实施改造措施。     

600MW直接空冷机组锅炉后屏过热器爆管原因分析

某电厂2×600 MW直接空冷机组在2次启动后均发生锅炉后屏过热器泄漏爆管事故。对爆管特征及管道内部进行检查分析,认为爆管与运行操作、参数控制等有关。过热器U形管内形成水塞,过热器管束内介质停滞,从而导致过热器短期超温爆管。提出在锅炉启动初期利用高、低旁路进行吹扫,利用压差带出受热面积水,适当延长低负荷向高负荷的过渡时间,机组启动过程中加强壁温监视,完善热工逻辑等措施,同时对锅炉启、停操作进行细化,以防止同类爆管事故的发生。     

同步磁阻电机混沌系统的自适应滑模控制

针对同步磁阻电机系统在特定条件下出现的混沌现象,提出一种自适应滑模控制方法,构建了同步磁阻电动机混沌系统模型.在此基础上,设计了同步磁阻电机混沌系统的自适应滑模控制器,并运用MATLAB仿真对该控制方法进行了验证.结果表明,该控制方法具有良好的稳定性、准确性与快速性.     

Validation of a Method for Quantitation of Soybean Lectin in Commercial Varieties

Soybean agglutinin (SBA) protein, also known as soybean lectin, is regarded as an anti‐nutrient due to its negative effect on the ability of monogastric animals to gain weight following consumption of raw soybean seed. Historically, SBA has been measured using a time‐consuming and cumbersome hemagglutination procedure. The objective of our research was to obtain a validated methodology that is precise and accurate in the measurement of SBA while allowing minimally equipped laboratories to effectively conduct the analysis, thus our focus was on evaluating an existing commercially available ELISA, an enzyme‐linked‐lectin‐assay (ELLA), and a hybrid ELISA/ELLA. A new ELLA technique that can detect and quantify lectins was chosen and modified specifically for the quantitation of SBA in soybean seed. The proposed ELLA methodology is similar to a standard sandwich ELISA, and uses polyacrylamide‐linked N‐acetylgalactosamine (Gal–NAc–PAA) for a capture phase and the biotinylated version (Gal–NAc–PAA–Biotin) for detection. Based upon the validation data, the ELLA method can precisely and accurately determine soybean lectin levels in soybean seed. The validated ELLA method was used to quantify SBA in nine commercial soybean varieties introduced between 1972 and 2008 and demonstrated that the natural variability of SBA is subject to the effects of genotype and environment.     

The Effects of Annealing Atmosphere on the Electrical Properties of MgNb2O6/ITO Heterostructures

The effects of annealing atmosphere (N₂, air and O₂) on the electrical properties of sol–gel‐derived MgNb₂O₆/ITO heterostructures are discussed in this work. All samples exhibited the amorphous phase and were highly transparent. The percentage of Nb⁴⁺ content increased when the films were annealed in the oxygen‐deficient conditions, which could lead to semiconducting films. In addition, the results show that the electrical properties of sol–gel‐derived MgNb₂O₆ thin films could be tuned based on the annealing atmosphere. Moreover, the conduction mechanisms of MgNb₂O₆/ITO heterostructures are also discussed in this study. The results show that MgNb₂O₆ thin films have potential for use in multifunctional optoelectronic applications, due to their flexible electrical properties and good transparency.     

Origin of the High Permittivity and Varistor Behavior in SnO2–Zn2SnO4 Composite Ceramics

SnO₂–Zn₂SnO₄ composite ceramics with a colossal dielectric permittivity and varistor behavior are prepared by traditional ceramic processing. By increasing bias voltage from 0 to 10 V at a low frequency (~10³ Hz) and at room temperature, the relative permittivity decreased rapidly from about 20 000 to several thousand, whereas the radius of the semicircle in the complex impedance decreased and the tail gradually disappeared. However, the peak height and the position of the imaginary part of the complex modulus in the spectra were independent of the applied DC voltage. The slope deduced from the bias voltage‐dependent straight lines of the double‐logarithmic imaginary permittivity spectra were constant with a value of ?0.63 at high frequencies and they decreased to ?1 at low frequencies. The results strongly indicate that a number of weekly trapped charges existed in the ceramic bulk. From the temperature‐dependent dielectric and electric modulus spectra, the trapped charge activation energy was about 0.32 eV, which may be associated with the oxygen vacancies. Based on the results, a modified equivalent circuit related to the colossal dielectric permittivity and varistor properties was proposed, in which a Warburg impedance was added in parallel with the resistance and capacitance.