High-temperature high-dose implantation of N+ and Al+ ions in 6H-SiC

A series of experimental and theoretical investigations has been initiated for 6H-SiC samples sequentially implanted with high doses of N⁺(65 keV) + N⁺(120 keV)+Al⁺(100 keV)+Al⁺(160 keV) ions at temperatures between 200 and 800 °C. Nitrogen and carbon distribution profiles are measured by ERD and structural defect distributions are measured by Rutherford backscattering with channeling. A comparison between the experimental data and the results of computer simulation yields a physical model to describe the relaxation processes of the implanted SiC structure, where the entire implanted volume is divided into regions of different depth, having different guiding kinetics mechanisms. Pis’ma Zh. Tekh. Fiz. 23, 6–14 (August 26, 1997)     

Diffusion doping of undoped hydrogenated amorphous silicon with tin

The solubility of tin in undoped, hydrogenated, amorphous silicon is determined by diffusion-doping films of this material with the radioactive isotope ^119m Sn. The temperature dependence of the tin solubility is described by the relation S[cm⁻³]=4×10²² exp(−0.46/kT[eV]). Fiz. Tekh. Poluprovodn. 32, 135–136 (February 1998)     

Raising efficiency of super-pure hydrogen production from natural gas

Production of super-pure hydrogen (SPH) using palladium alloy membrane is one of the major directions of hydrogen energy engineering and technology. A block diagram of a high-temperature membrane unit for production of SPH from natural gas (NG) is shown. An analysis of two variants of process regime of SPH production from NG is given. It is shown that a more effective regime is low-pressure conversion of methane and that it is advisable to create the pressure required for operation of the high-temperature membrane unit before the membrane apparatus.     

Amorphous silicon and germanium films for uncooled microbolometers

The possibility of using amorphous silicon and germanium films prepared by magnetron sputtering as components in uncooled microbolometers has been analyzed experimentally and results are presented. Amorphous silicon and germanium films having activation energies of 0.135 and 0.2 eV, and resistivities of 50 and 0.4 kΩ·cm, respectively, were fabricated. Pis’ma Zh. Tekh. Fiz. 23, 21–26 (July 12, 1997)     

Thermodynamics of the Pu-O2 system

Translated from Atomnaya Énergiya, Vol. 65, No., 4, pp. 265–268, October, 1988.