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61.
62.
The fracture stress and the critical stress intensity factor of the Fe40Ni40B20 amorphous metallic ribbons 20 μm thick were measured in the temperature range 4.2–300 K and at deformation rates from 3.3×10−6 to 1.25×10−3 m−1 with the aim to obtain more information on the condition for the onset and development of the inhomogeneous plastic deformation and fracture.  相似文献   
63.
We present a systematic, empirical design technique to obtain optimum broadband impedance, axial-ratio (AR) and gain bandwidths for a singly-fed electromagnetically coupled patch antenna for circular polarization. Our investigation has also revealed tradeoffs amongst obtainable AR, impedance bandwidth and AR bandwidth. Using two design examples at different frequency bands and for different senses of circular polarization, we have demonstrated the effectiveness of the proposed knowledge-based tuning method. We have obtained at C-band measured values of impedance bandwidth (VSWR/spl les/2) equal to 43%, 3-dB AR bandwidth of 8%, AR of less than 0.3 dB and a mean gain level of 7 dB. For the Ku-band element, a 40% impedance bandwidth and a 17.3% of 3-dB AR bandwidth have been obtained with a peak gain of 7.2 dBic.  相似文献   
64.
建(构)筑物机械拆除方法综述   总被引:1,自引:0,他引:1  
陈宝心  邓敉 《施工技术》2004,33(6):50-51
介绍了几种常用的建(构)筑物机械拆除方法,对其工作原理、特点、应用条件及局限性加以分析和说明。  相似文献   
65.
Proton-exchanged optical waveguides have been fabricated in z-cut LiNbO/sub 3/ using a new proton source: stearic acid. These waveguides were characterized optically and were found to exhibit a step index profile with Delta n=0.118 measured at 0.633 mu m. The propagation losses were typically around 1.5 dB/cm, and the diffusion constant and the activation energy for the proton-exchange process were measured to be 5*10/sup 6/ mu m/sup 2//h and 69 kJ/mol, respectively.<>  相似文献   
66.
The measurement of the effects of external optical feedback on the spectra of VCSELs (vertical-cavity surface-emitting lasers) is reported. It is surprising that VCSELs have a sensitivity to optical feedback comparable to that of conventional edge-emitting lasers such as DFBs despite their significantly different structures. This is because the extremely short cavity length of VCSELs negates the effects of their highly reflective output mirrors. As in edge-emitting lasers, VCSELs exhibit well-defined regimes of feedback effects in their spectra. Since optical isolators cannot be easily applied to VCSELs due to their array structure, these lasers may be most useful in applications which are not sensitive to the spectral qualities of the light source.<>  相似文献   
67.
p53 mutations, a tumor suppressor gene located on chromosome 17p, are the most common genetic alterations found in human cancers. Although the p53 expression or mutation has been investigated in a variety of cancers there have been very few studies in extrahepatic bile duct cancers. In this study, we investigated the immunohistochemical expression of p53 in formalin fixed paraffin embedded archival specimens of 36 extrahepatic bile duct cancers in which p53 expression was found in eighteen (50%) cases. There was no significant difference in age, gender, size of tumor, histologic grade, extent of tumor involvement, lymph node metastasis and tumor resectability according to p53 immunoreactivity. Comparison of survival duration according to p53 expression showed no significant difference. In conclusion, we reported 50 percent of p53 expression in extrahepatic bile duct cancers by immunohistochemical staining and we found no prognostic significance of p53 expression in dinicopathologic parameters.  相似文献   
68.
This paper reports a simple I-V method for the first time to determine the lateral lightly-doped source/drain (S/D) profiles (n- region) of LDD n-MOSFETs. One interesting result is the direct observation of the reverse-short-channel effect (RSCE). It is observed that S/D n- doping profile is channel length dependent if reverse short-channel effect exists as a result of the interstitial imperfections caused by Oxide Enhanced Diffusion (OED) or S/D implant. Not only the lateral profiles for long-channel devices but also for short-channel devices can be determined. One other practical application of the present method for device drain engineering has been demonstrated with a LATID MOS device drain engineering work. It is convincible that the proposed method is well suited for the characterization and optimization of submicron and deep-submicron MOSFETs in the current ULSI technology  相似文献   
69.
A two-dimensional finite element model was constructed to analyze the simulated mechanical behavior of a cantilevered fixed partial denture. The variations of the models were made by altering the degree of bone support, the number of splinted abutments, and the length of the pontics. High stress concentrations were observed around the connectors of the fixed prosthesis and the tooth closest to the cantilever. Reduced bone support increased the deflection and stress concentrations. There was reduction in displacement and stress concentration when the teeth were splinted together. To improve the prognosis of the fixed partial denture cantilever, the number of abutments should be increased and the number of pontics decreased.  相似文献   
70.
对In(0.2)Ga(0.8)As/GaAs应变多量子阱在77K下的光调制反射谱(PR)和热调制反射谱(TR)进行了实验研究.对PR结果的线形拟合指认了应变多量子阱中子能级的跃迁,并与理论计算结果作了比较.实验对比确认PR中11H、13H等跃迁结构为非耦合态、具有电场调制机构的一阶微商性质.而11L、31H、22H等跃迁结构为阶间耦合态,对这些隧穿耦合的低场调制产生三阶微商特性.  相似文献   
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