Wavelength and Waveband Assignment for Ring Networks Based on Parallel Multi‐granularity Hierarchical OADMs

In this paper we study the optimization issues of ring networks employing novel parallel multi‐granularity hierarchical optical add‐drop multiplexers (OADMs). In particular, we attempt to minimize the number of control elements for the off‐line case. We present an integer linear programming formulation to obtain the lower bound in optimization, and propose an efficient heuristic algorithm called global bandwidth resource assignment that is suitable for the design of large‐scale OADM networks.     

交叉试验

发生了质量事故,是设备、操作等硬件的缘故,抑或药液的缘故?通过交叉试验的故事,把真相找了出来。     

电信运营企业项目融资初探

通过对电信运营企业多渠道融资的必要性的阐述，论证了项目融资是电信运营企业可选的一种融资方式，并有针对性地提出了电信运营企业实施项目融资的模式及应注意的问题。     

WC/Cu复合材料制备及其高温性能

用机械合金化法结合冷变形，制备了WC／Cu复合材料，研究了冷变形后复合材料的组织特征和高温退火时韵性能变化。结果表明：烧结后的材料经冷变形，组织呈显著纤维状，WC颗粒弥散分布，密度明显提高，达到理论密度的99．2％；复合材料经600～900℃高温退火，强度和硬度略有下降，塑性则有大幅提高；900℃退火时未发生明显的再结晶，界面结合良好；所制备的WC／Cu复合材料有优良的综合性能。     

复合固体超强酸SO42-/Fe2O3-γ-Al2O3催化合成丁酸丁酯

采用沉淀硫酸化法制备了复合固体超强酸催化剂SO2-4/Fe2O3-γ-Al2O3,确定了其最佳制备工艺条件:硫酸浸渍浓度为0.6 mol/L,浸渍时间4 h;焙烧温度550℃,焙烧时间3 h.并采用该催化剂合成丁酸丁酯,考察了物料配比、催化剂用量和反应时间对酯化反应的影响,确定了丁酸丁酯的最佳合成条件:丁醇与丁酸摩尔比为1.4:1,催化剂用量0.9%(以反应物质量计),回流条件下反应3.0 h,在此最佳合成条件下,酯化率可达95.6%.     

胜利油田单12区块内源微生物分子生态研究

为了全面客观地了解油藏内源微生物生态变化规律,针对油藏微生物特点建立了基于PCR扩增的变性梯度凝胶电泳(DGGE)和末端限制性片段长度多态性分析(T-RFLP)2种研究方法。提取胜利油田单12区块注入水和产出水中微生物的总DNA,并以此DNA为模板PCR扩增16S rDNA,然后分别进行DGGE和T-RFLP分析。DGGE分析结果:注入水和单12-4井检测到的条带数各有10条,单12-5井有7条,但是单12-4井、单12-5井优势种群条带数都有6条,大于注入水的4条,表明油藏内源微生物具有十分丰富的多样性,激活剂的注入激活了内源微生物;T-RFLP分析表明,该区块油藏中主要存在脱硫弧菌、假单胞菌、不动杆菌和梭菌等细菌,这些均为有益采油菌类。该研究从分子生态学角度更准确地掌握了油藏微生物生态变化规律,为内源微生物驱油方案的优化和驱油效果的提高起到跟踪指导作用。     

阀控式密封铅酸蓄电池的寿命及失效分析

介绍了各种影响阀控式密封铅酸蓄电池寿命及容量的因素,分析了其失效的原因,并相应的对电池的维护提出了一些建议。     

超级电容器在汽车启动中的应用

根据超级电容器的结构特性,介绍在汽车启动过程中如何利用超级电容器减小对车内其他电子设备的干扰,改善汽车的启动性能,延长蓄电池使用寿命.     

On the physical and logical topology design of large-scale optical networks

We consider the problem of designing a network of optical cross-connects (OXCs) to provide end-to-end lightpath services to large numbers of label switched routers (LSRs). We present a set of heuristic algorithms to address the combined problem of physical topology design (i.e., determine the number of OXCs required and the fiber links among them) and logical topology design (i.e., determine the routing and wavelength assignment for the lightpaths among the LSRs). Unlike previous studies which were limited to small topologies with a handful of nodes and a few tens of lightpaths, we have applied our algorithms to networks with hundreds or thousands of LSRs and with a number of lightpaths that is an order of magnitude larger than the number of LSRs. In order to characterize the performance of our algorithms, we have developed lower bounds which can be computed efficiently. We present numerical results for up to 1000 LSRs and for a wide range of system parameters such as the number of wavelengths per fiber, the number of transceivers per LSR, and the number of ports per OXC. The results indicate that it is possible to build large-scale optical networks with rich connectivity in a cost-effective manner, using relatively few but properly dimensioned OXCs.     

Characteristics of low-leakage deep-trench diode for ESD protection design in 0.18-/spl mu/m SiGe BiCMOS process

This paper proposes a novel low-leakage BiCMOS deep-trench (DT) diode in a 0.18-/spl mu/m silicon germanium (SiGe) BiCMOS process. By means of the DT and an n/sup +/ buried layer in the SiGe BiCMOS process, a parasitic vertical p-n-p bipolar transistor with an open-base configuration is formed in the BiCMOS DT diode. Based on the two-dimensional (2-D) simulation and measured results, the BiCMOS DT diode indeed has the lowest substrate leakage current as compared to the conventional p/sup +//n-well diode even at high temperature conditions, which mainly results from the existence of the parasitic open-base bipolar transistor. Considering the applications of the diode string in electrostatic discharge (ESD) protection circuit designs, the BiCMOS DT diode string also provides a good ESD performance. Owing to the characteristics of the low leakage current and high ESD robustness, it is very convenient for circuit designers to use the BiCMOS DT diode string in their IC designs.