Theoretical Strength of Borides and Quasibinary Boride Eutectics at High Temperatures

Powder Metallurgy and Metal Ceramics - The theoretical strength of LaB6 and MeB2 borides and a eutectic LaB6–TiB2 system is calculated with quasiharmonic approximation for uniaxial strain in...     

Viscosity of Fe90B x Si(10 − x) melts

High Temperature - The temperature dependences of the viscosity of liquid Fe90B x Si(10 − x) alloys are studied in the mode of heating and subsequent cooling. The temperature dependences of...     

A unified critical state model for geomaterials with an application to tunnelling

This paper is prepared in honour of Professor E.T. Brown for his outstanding contributions to rock mechanics and geotechnical engineering and also for his personal influence on the first author's research career in geomechanics and geotechnical engineering. As a result, we have picked a topic that reflects two key research areas in which Professor E.T. Brown has made seminal contributions over a long and distinguished career. These two areas are concerned with the application of the critical state concept to modelling geomaterials and the analysis of underground excavation or tunnelling in geomaterials.Partially due to Professor Brown's influence, the first author has also been conducting research in these two areas over many years. In particular, this paper aims to describe briefly the development of a unified critical state model for geomaterials together with an application to cavity contraction problems and tunnelling in soils.     

An automated system based on cryogenic probe station for integrated studies of semiconductor light-emitting structures and wafers in the range of 15 to 475 K

An automated system for integrated electrophysical and optical studies of semiconductor nanoheterostructures, which operates in a wide temperature range from 15 to 475 K, is designed. The setup is intended to measure the temperature and frequency admittance and electroluminescence spectra of light-emitting diode and laser chips formed on substrates of diameter up to 50.2 mm, and the distribution of parameters over the wafer. The setup includes the closed-cycle helium cryogenic station, LCR meter, and temperature controller. The characterization results of nanoheterostructures with InGaN/GaN multiple quantum wells, which are used for creating highly efficient white and blue light-emitting diodes, are presented.     

Irreversible deformation and the superplasticity of a TN-1 alloy during thermal cycling through the martensitic transformations ranges under loading

The influence of the thermal cycling conditions on the thermal-cycling creep of a TN-1 alloy and the related irreversible deformations is studied. The conditions under which an anomalous increase in the irreversible deformations begins are determined. The structural mechanism of the irreversible deformations of an equiatomic alloy is shown to be analogous to the structural mechanism of metal creep at high temperatures: it predominantly has a dislocation character. It is proposed to use the effect of anomalous increase in the deformation of materials with reversible martensitic transformations for forming parts made of these materials at low temperatures.