Mobility management for VoIP service: Mobile IP vs. SIP

Wireless Internet access has gained significant attention as wireless/mobile communications and networking become widespread. The voice over IP service is likely to play a key role in the convergence of IP-based Internet and mobile cellular networks. We explore different mobility management schemes from the perspective of VoIP services, with a focus on Mobile IP and session initiation protocol. After illustrating the signaling message flows in these two protocols for diverse cases of mobility management, we propose a shadow registration concept to reduce the interdomain handoff (macro-mobility) delay in the VoIP service in mobile environments. We also analytically compute and compare the delay and disruption time for exchanging signaling messages associated with the Mobile IP and SIP-based solutions.     

Ruthenium dye-sensitized SnO2/TiO2 coupled solar cells

The photoelectrochemical behaviors of RuL₂(NCS)₂ dye-sensitized SnO₂/TiO₂ coupled solar cell was studied and compared with TiO₂ single system. The coupled system shows higher incident photon-to-current conversion efficiency (IPCE) value than the single system. A maximum IPCE value in the coupled system with 3.5 μm-thick SnO₂ and 7 μm-thick TiO₂ attained 82.4% at 530 nm wavelength. The higher IPCE value in the coupled system is attributed to the charge separation by fast electron transfer process from the excited RuL₂(NCS)₂ dye to TiO₂ to SnO₂ in the system with different energy level.     

Natural quality two-band LPC coding of speech at 880 bit/s withframe interpolation

A novel frame interpolation technique for two-band linear predictive coding (LPC) vocoders is proposed for maintaining natural speech quality at bit rates below 1 kbit/s. Experimental results show that the speech quality of the proposed vocoder is quite natural at bit rates 880 bit/s and comparable to that of 4.8 kbit/s CELP     

Nondestructive evaluation of the characteristics of degraded materials using backward radiated ultrasound

The frequency dependency of Rayleigh surface wave is investigated indirectly by measuring the angular dependency of the backward radiation of the incident ultrasonic wave in two kinds of degraded specimens by scuffing or corrosion. Then, the frequency dependency is compared with the residual stress distribution or the corrosion-fatigue characteristics for the scuffed or corroded specimens, respectively. The width of the backward radiation profile increases with the increase of the variation in residual stress distribution for the scuffed specimens. In the corroded specimens, the profile width decreases with the increase of the effective aging layer thickness and is inversely proportional to the exponent, m, in the Paris’ law that can predict the crack size increase due to fatigue. The result observed in this study demonstrates high potential of backward radiated ultrasound as a tool for nondestructive evaluation of subsurface gradient of material degradation generated by scuffing or corrosion.     

Re-examination of analytical models for microwave scattering from deciduous leaves

This paper presents an examination of classical scattering models for radar cross sections of deciduous leaves, such as the generalised Rayleigh-Gans (GRG) model and the physical optics (PO) model. The PO model employs the resistive sheet approximation in this study. The validity regions of the analytical models for microwave scattering from deciduous leaves are investigated by comparison with the precise numerical results of the method of moment. It was found that the GRG and PO models extend their validity regions for estimating the scattering amplitudes as the thickness of a lossy dielectric disk decreases. The GRG and PO models can be used alternatively for computing the scattering matrices of natural deciduous leaves at microwave frequencies regardless of the size of the leaves, because of the very small thickness of the leaves (0.2-0.4 mm)     

Residual toughness of poly(acrylonitrile-butadiene-styrene) (ABS) after fatigue loading—effect of uniaxial fatigue loading

Toughness variation of non-notched poly(acrylonitrile-butadiene-styrene) (ABS) subjected to uniaxial fatigue loading was investigated. The experiments were conducted by applying fatigue loading to strip specimens first, from which dog-bone specimens were machined. The dog-bone specimens were tested to measure the strain for the on-set of fracture, named cracking strain here, thus to monitor the toughness change due to the fatigue loading.The test results showed that the fatigue loading caused the toughness drop in ABS, even before any visible crack was developed. Damage development and fracture behavior were then analyzed using scanning electron microscopy (SEM). The SEM analysis revealed that damage zones, not cracks, were initiated during the fatigue loading, and were the main cause of the toughness drop. Mechanisms for the damage initiation include matrix crazing and debonding of small rubber particles; however, large rubber particles remained intact. Based on the results, a deformation model is proposed for the damage zone initiation, which provides an explanation for the toughness change under the fatigue loading.     

High-gain pseudomorphic InGaAs base ballistic hot-electron device

A high-gain ballistic hot-electron device is described. The GaAs-AlGaAs heterostructure device, with a 21-mm-thick pseudomorphic In _0.12Ga_0.88As base, had a current gain of 27 at 77 K and 41 at 4.2 K. As characteristically seen in ballistic devices, transfer into the L valley limited the maximum gain. The Γ-L valley separation in the strained In_0.12Ga_0.88As was estimated to be about 380 meV     

Broadly wavelength-tunable external cavity lasers with extremely low power variation over tuning range

Tunable external-cavity lasers with low power variation over a broad tuning range are demonstrated using asymmetric multiple quantum-wells with a wide and flat gain. For a 2.8-/spl mu/m-wide ridge waveguide laser of cavity length 380 /spl mu/m, when used in a grating external cavity and with an antireflection coating on one facet of laser diode chip, the power variation of less than -1 dB is obtained over a range of 80 nm. This extremely low power variation is a direct result of the spectrally flat gain.     

W-band divide-by-3 frequency divider using 0.1 /spl mu/m InAlAs/InGaAs metamorphic HEMT technology

A W-band divide-by-3 frequency divider with wide bandwidth and low power dissipation is presented using harmonic injection-locking technique. A cascode FET is employed for a self-oscillating second-harmonic mixer which is injection-locked by third-harmonic input to obtain the division order of three. The fabricated frequency divider using 0.1 /spl mu/m GaAs metamorphic HEMT technology shows superior performance such as large bandwidth of 6.1 GHz around 83.1 GHz (7.3%) under small DC power consumption of 12 mW.