Formation of a silicon micropore array of a two-dimension electron multiplier by photo electrochemical etching

A semiconductor PEC etching method is applied to fabricate the n-type silicon deep micropore channel array. In this method, it is important to arrange the direction of the micropore array along the crystal orientation of the Si substrate. Otherwise, serious lateral erosion will happen. The etching process is also relative to the light intensity and HF concentration. 5% HF concentration and 10-15 cm distance between the light source and the silicon wafer are demonstrated to be the best in our experiments. The n-type silicon deep micropore channel array with aperture of 3μm and aspect ratio of 40-60, whose inner walls are smooth, is finally obtained.     

硅基二维通道电子倍增器微孔阵列基体形成的光电化学技术研究

A semiconductor PEC etching method is applied to fabricate the n-type silicon deep micropore channel array. In this method, it is important to arrange the direction of the micropore array along the crystal orientation of the Si substrate. Otherwise, serious lateral erosion will happen. The etching process is also relative to the light intensity and HF concentration. 5% HF concentration and 10-15 cm distance between the light source and the silicon wafer are demonstrated to be the best in our experiments. The n-type silicon deep micropore channel array with aperture of 3/2m and aspect ratio of 40-60, whose inner walls are smooth, is finally obtained.     

低强度又射线影像系统的信噪比分析

分析X射线系统的噪声来源，以一维方波图象为例，推导了其噪声表达式，得出图像传递信噪比。根据图象传递信噪比函数，讨论了入射线影像系统所能探测图象的极限。     

一种基于小波相位信息的低强度X射线影像系统的图像去噪方法

新型低强度X射线影像系统主要是由平板式单近贴静电聚焦X射线像增强器和CCD数据采集系统构成.文章简述了低强度X射线影像系统的图像噪声来源和特点,并根据图像噪声的特点,先进行多帧叠加平均预处理,再进行小波变换滤波.区别于传统的小波变换方法,引入小波变换的相位信息概念,根据噪声和图像信息小波变换后的相位不同特点,从局部和相邻尺度两方面联合进行噪声自动判别和滤除.小波反变换后,得到输出图像,通过对峰值信噪比的计算,表明该方法能取得较好效果.     

Influence of O/Ar ratio on the properties of NiO thin film grown with the method of radio-frequency magnetron sputtering

In order to obtain high quality NiO thin film grown with the radio-frequency magnetron sputtering method, the influence of O/Ar ratio on the structure, band-gap, resistivity and optical transmittance of NiO thin films were studied. It was found that the obtained NiO thin film showed (111) preferred orientation and higher transparency in the visible region. With the increasing of O/Ar ratio from 1∶7 to 8∶2, the optical transmittance of NiO thin films decreased and the optical band-gap was between 3.4 eV and 3.7 eV, and the sheet resistivity decreased from 5.4×107 Ω/□ to 1.0 ×105 Ω/□. Our study shows that the properties of NiO thin films can be adjusted in a wide range by adjusting the O/Ar ratio in the sputtering process.     

三种基于骨架构建体污泥复合调理剂脱水泥饼土工性能研究

以含水率为97.3%的原污泥为对象,选择了3种基于不同骨架构建体的复合调理剂(F-L、F-S和S-F)进行污泥脱水试验,对脱水效果及脱水泥饼作为填埋处置的土工性能进行了研究。结果表明,3种体系中,添加无机调理剂起骨架构建体作用,污泥比阻和CST均有降低,可以显著改善污泥脱水性能。在不外掺其他固化剂的条件下,脱水泥饼固化体的无侧限抗压强度和黏聚力随养护龄期增加而增长,摩擦角变化不大,具有优良的固化土工性能。     

片铸和锭铸Nd-Fe-B合金HDDR磁粉的比较及均质化处理的影响

以成分为Nd_(13.0)Fe_(80.1)B_(6.4)Ga_(0.3)Nb_(0.2)(at%)的速凝合金铸片为原料,采用HDDR工艺制备各向异性钕铁硼磁粉。研究了均质化热处理工艺和HDDR工艺对磁粉性能的影响。结果表明,在1000~1160℃温度范围内,随着均质化热处理温度的升高,磁粉的B_r和(BH)_(max)逐步提高;在0~20h时间范围内,随着均质化热处理时间的延长,磁粉的B_r和(BH)_(max)逐步提高;经由最佳均质化热处理(1160℃×20h)的速凝铸片制备的磁粉,其B_r为1.43T、Hcj为1.30MA/m、(BH)_(max)为352k J/m~3。在均质化热处理与HDDR工艺条件相同的情况下,使用片铸合金和传统锭铸合金制备的粘结磁体相比较,前者的B_r、(BH)_(max)分别高出后者约5%、10%。速凝铸片即使不进行均质化热处理,通过适当调整HDDR工艺参数也能制备出磁性能较佳的各向异性钕铁硼磁粉。     

锥形量热仪试验及墙角火试验关系初探

探索了锥形量热仪试验及墙角火试验之间的某些关系，利用几种常见可燃装饰材料的实验数据，对预测轰燃时间的模型进行验证，提出了在不同情况下对实验数据进行不同处理的新思路。     

空间光通信用复合波导阳极微通道光电倍增管

为了降低自由空间光通信系统对高跟踪精度的需求,化简光学天线结构,缩小系统体积,本文提出了一种采用复合波导阳极的空间光通信专用微通道光电倍增管.首先从微通道板光电倍增理论模型的角度出发,介绍了新型器件的工作原理并分析复合波导阳极的透射阳极和位敏阳极对真空倍增系统造成的约束条件;其次通过光学传递函数分析方法研究了复合波导阳极的器件特性并给出了器件设计参数与成像能力之间的对应关系;接着在此基础上分析了高速信号检测功能和入射光轴精确定位功能的约束关系,给出了相应的电子光学系统设计与修正方法;最后在真空炉中进行了该新型器件的验证性试验.     

基于多个传感器的VLC室内定位算法研究

为了实现移动机器人的快速高精度定位,提出了一种基于多个传感器的室内定位模型,研究了其可见光通信技术(VLC)室内定位算法,并对该算法进行了实验验证。首先研究基于AOA定位算法,利用传感器的响应曲线,结合室内定位模型,通过拟合预测算法计算出信号到达角度实现定位;然后综合多个传感器的定位模型和AOA定位算法,分析得出一种室内定位的实现方式,通过实验验证了该定位模型和定位算法的实现可行性。结果表明:其定位精度达13.6cm,定位周期为0.1s,相较于传统的AOA定位算法,该算法定位精度高、成本低、可行性高且定位速度快。