燃料变化对气体燃烧器燃烧性能影响的数值模拟研究

该文以John Zink公司一种瓦斯燃烧器为几何原型,对燃烧器和稳焰旋流器附近三维复杂形状未作任何简化,生成了包括燃烧器和炉膛的结构化网格,换用甲烷、乙烷、丙烷和丁烷四种不同的气体燃料,用标准的k-ε湍流模型、k-ε-g湍流扩散燃烧模型和蒙特卡洛辐射换热模型对燃烧器内的流动及燃烧状况进行了全尺寸数值模拟,预报了燃烧器内流场和温度场,考察燃料变化对炉内温度场的影响规律及燃气射流特性参数(Re·D1)对火焰长度的影响,对进一步优化设计燃烧器、提高加热炉热效率有很好的指导意义。     

Using circuit model from layout-level synthesis as coarse model in space mapping and its application in modelling low-temperature ceramic cofired radio frequency circuits

The technique of using a coarse model obtained from layout-level synthesis of radio frequency components in neural inverse space mapping (NISM) optimisation technique is proposed. Layout-level synthesis is based on a combination of segmented lump-circuit modelling, nonlinear mapping using neural network (NN) and circuit-level optimisation. The circuit model based on the electromagnetic (EM) simulation describes the important parameters and parasitic parameters and serves as a high-quality coarse model in applying NISM. In implementation of NISM optimisation, trained NN is introduced as a buffer space between the original coarse model space and the fine model space, where the subset of the coarse model space is completely different from that of the fine model space. Stoer-Bulirsch adaptive frequency sampling (S-B AFS) technique is used in frequency sweep of the fine model to further reduce the computing time. An application design of low-temperature ceramic cofired filter is used to demonstrate the proposed technique. Synthesis and optimisation results of the filter meet the design specifications.     

机械过冷的制冷系统在汽车空调中的应用

由于很多汽车空调采用斜盘式压缩机，有利于采用机械过冷的制冷系统，来增加汽车空调的制冷量、提高制冷效率。本文的主要目的是通过对系统工质的流量分配、空调制冷量和性能系数(COP)与中间压力之间的变化关系的研究，来研究机械过冷在汽车空调中应用的可行性。     

Silicon single electron transistors with SOI and MOSFET structures: the role of access resistances

Coulomb blockade has been widely reported in silicon and metallic structures without intentional tunnel barriers. In particular, a simple constriction in silicon-on-insulator (SOI) allows to build a three-terminal silicon single-electron transistor (SET) operating at moderate temperature. The key parameters are the access resistances confining the electrons and the size of the gate-channel overlap, which sets the Coulomb energy. Thin films of doped silicon with sheet resistance of a few tens of h/e/sup 2/ are well suited for fabricating optimized access resistances. Low doped extensions with typical resistivity 1000 /spl Omega//spl mu/m (at 300 K) are also good candidates. We illustrate this MOS-SET principle in SOI constriction and standard MOSFET of similar size. Although relying on different concepts, the ultimate MOSFET and MOS-SET are shown to be technologically close, differing mostly by the ratio between the channel resistance over the access resistance. Because this ratio is decreasing as the gate length shrinks, single electron effects should become more and more important at high temperature in the subthreshold regime of standard field effect transistor devices.     

添加微量铝对TS-2合成及苯酚羟基化的影响

以硅溶胶为硅源合成分子筛TS 2时 ,在溶胶制备过程中添加微量的铝 ,可以降低模板剂氢氧化四丁基铵 (TBAOH)的用量 ,当TBAOH/SiO2 降低到 0 .1以下时 ,仍然合成了性能优良的TS 2 ,而且用于苯酚过氧化氢羟基化反应过程中催化活性也大大提高。所得催化剂用XRD ,IR ,ICP进行了表征