Detecting pattern-based outliers

Outlier detection targets those exceptional data that deviate from the general pattern. Besides high density clustering, there is another pattern called low density regularity. Thus, there are two types of outliers w.r.t. them. We propose two techniques: one to identify the two patterns and the other to detect the corresponding outliers.     

Modular Reconfigurable Robots in Space Applications

Robots used for tasks in space have strict requirements. Modular reconfigurable robots have a variety of attributes that are well suited to these conditions, including: serving as many different tools at once (saving weight), packing into compressed forms (saving space) and having high levels of redundancy (increasing robustness). In addition, self-reconfigurable systems can self-repair and adapt to changing or unanticipated conditions. This paper will describe such a self-reconfigurable modular robot: PolyBot. PolyBot has significant potential in the space manipulation and surface mobility class of applications for space.     

一种互联网资源标志与寻址技术:Handle System

互联网最基础的资源标志与寻址技术是域名和IP地址，随着互联网资源种类的增加，以及应用的发展，出现了对新一代互联网资源标志与寻址技术的需求。介绍了一种新的互联网资源标志与寻址技术，并将这种技术应用到域名系统中。     

One-Dimensional Numerical Model for Nonuniform Sediment Transport under Unsteady Flows in Channel Networks

In this study, the proposed one-dimensional model simulates the nonequilibrium transport of nonuniform total load under unsteady flow conditions in dendritic channel networks with hydraulic structures. The equations of sediment transport, bed changes, and bed-material sorting are solved in a coupling procedure with a direct solution technique, while still decoupled from the flow model. This coupled model for sediment calculation is more stable and less likely to produce negative values for bed-material gradation than the traditional fully decoupled model. The sediment transport capacity is calculated by one of four formulas, which have taken into consideration the hiding and exposure mechanism of nonuniform sediment transport. The fluvial erosion at bank toes and the mass failure of banks are simulated to complement the modeling of bed morphological changes in channels. The tests in several cases show that the present model is capable of predicting sediment transport, bed changes, and bed-material sorting in various situations, with reasonable accuracy and reliability.     

A study on the thermal behavior in microaccelerometer manufacturing processes

Single crystal silicon (SCS) is used in a variety of microsensor applications in which stresses and other mechanical effects may dominate device performance. One of major problems associated with the manufacturing processes of the microaccelerometer based on the tunneling current concept is temperature gradient and thermal stressess. This paper deals with finite element analyses of residual stresses causing popping up, which are induced in micromachining processes of a microaccelerometer. The authors model temperature-dependent mechanical properties during focused ion beam (FIB) cutting and Pt deposition processes. The maximum thermal strain of 0.0012 occurred at the readout gap of the microaccelerometer during the Pt deposition process. The stress produced during the heating process of FIB cut was also found to be about 33–36 MPa and cooling process the maximum equivalent stress of about 34MPa still at the right corner of readout gap. The calculated maximum displacement occurred at the readout gap was 0.14 μm. This is still smaller than the popping up of about 2 μm observed in the experiment. The reason for this popping up phenomenon in munufacturing processes of microaccelerometer may be the bending of the whole wafer or it may come from the way the underetch occurs. Different SOI material and a new geometry of the accelerometer are under investigation. We want to seek after the real cause of this pop up phenomenon and diminish this by changing munufacturing processes of microaccelerometer.     

Structural evolution and dopant occupancy preference of yttrium-doped potassium sodium niobate thin films

Sodium potassium niobate (KNN) is the most promising candidate for lead-free piezoelectric material, owing to its high Curie temperature and piezoelectric coefficients among the non-lead piezoelectric. Numerous studies have been carried out to enhance piezoelectric properties of KNN through composition design. This research studied the effects of yttrium concentrations and lattice site occupancy preference in KNN films. For this research, the yttrium-doped KNN thin films (mol% = 0, 0.1, 0.3, 0.5, 0.7 and 0.9) were fabricated using the sol-gel spin coating technique and had revealed the orthorhombic perovskite structures. Based on the replacement of Y³⁺ ions for K⁺/ Na⁺ ions, it was found that the films doped with 0.1 to 0.5 mol% of yttrium had less lattice strain, while films with more than 0.5 mol% of Y³⁺ ions had increased strain due to the tendency of Y³⁺ to occupy the B-site in the perovskite lattice. Furthermore, by analysing the vibrational attributes of octahedron bonding, the dopant occupancy at A-site and B-site lattices could be identified. O-Nb-O bonding was asymmetric and became distorted due to the B-site occupancy of yttrium dopants at high dopant concentrations of >0.5 mol%. Extra conduction electrons had resulted in better resistivity of 2.153× 10⁶ Ω at 0.5 mol%, while higher resistivity was recorded for films prepared with higher concentration of more than 0.5 mol%. The introduction of Y³⁺ improved the grain distribution of KNN structure. Further investigations indicated that yttrium enhances the surface smoothness of the films. However, at high concentrations (0.9 mol%), the yttrium increases the roughness of the surface. Within the studied range of Y³⁺ _, the film with 0.5 mol% Y³⁺ represented a relatively desirable improvement in dielectric loss, tan δ and quality factor, Q_m.     

Structural,optical and electrical properties of silicon nanocrystals embedded in SixC1−x/SiC multilayer systems for photovoltaic applications

In this work we present a structural, optical and electrical characterization of Si_xC_1?x/SiC multilayer systems with different silicon content. After the deposition process, an annealing treatment was carried out in order to induce the silicon nanocrystals formation. By means of energy-filtered transmission electron microscopy (EFTEM) we observed the structural morphology of the multilayers and the presence of crystallized silicon nanoprecipitates for samples annealed up to 1100 °C. We discuss the suitability of optical techniques such as Raman scattering and reflectance and transmittance (R&T) for the evaluation of the crystalline fraction of our samples at different silicon excess ranges. In addition, the combination of R&T measurements with simulation has proved to be a useful instrument to confirm the structural properties observed by EFTEM. Finally, we explore the origin of the extremely high current density revealed by electrical measurements, probably due to the presence of an undesired defective SiC_yO_z ternary compound layer, already supported by the structural and optical results. Nevertheless, the variation of the electrical measurements with the silicon amount indicates a small but significant contribution from the multilayers.     

On the Determination of a Safe Life for Distributions Classified by Failure Rate

If the distribution of life length is a member of a specified subset of distributions which have increasing failure rates, we find a method of determining functions of the sample data which can be used to provide lower tolerance bounds of given confidence or a service life with specified assurance of no failures among a given number of items to be produced.

The method of finding such functions of the observations is shown to be optimal in a sense and the calculation of a lower bound for the probability of no failure in the future production is carried out when such functions are used. The confidence in the tolerance bound and the assurance of no failure in a production lot of specified size are compared when using bounds obtained from these functions.