人工神经网络与遗传算法的协作在输电铁塔结构优化上的实现

着重讨论了人工神经网络及遗传算法的应用，并介绍了求解问题的步骤。提出了人工神经网络（BP网络）与遗传算法的协作，利用人工神经网络的联想记忆，特征提取的能力，辅助遗传算法求解输电铁塔结构优化设计问题。进行了实例运算，给出了计算结果，并和其它的计算方法进行比较，计算时间可减少15％-20％。     

Field-induced magnetic phase transitions in ferrimagnet GdMn2Ge2: H - T magnetic phase diagrams

Magnetic properties of a two-sublattice ferrimagnet with antiferromagnetic exchange interaction inside one of the sublattices are calculated within the framework of the molecular field theory taking into account the anisotropy of unstable sublattice. The magnetization curves of single crystal GdMn₂Ge₂ for the magnetic field parallel and perpendicular to the c-axis at different temperatures are calculated. Field-induced magnetic phase transitions in GdMn₂Ge₂ are discussed. Calculated H - T magnetic phase diagrams are in fair agreement with experimental data. Biography of the first author: GUO Guang-hua, associate professor, born in 1964, received Ph. D. degree in 1999, majoring in condensed matter physics.     

高压旋喷试验技术在沙湾电站尾水渠工程的应用

介绍了高压旋喷试验施工情况，明确在此类地质条件下采用高压旋喷灌浆是完全可行的，整个试验取得了成功，对于类似工程项目的试验具有借鉴意义。     

AAS法测定纯铼中痕量元素K试验研究

用AAS法测定纯铼中的痕量元素K。通过优化原子吸收测量条件,研究了硝酸用量以及基体铼对测定K含量的影响,建立了AAS法测定纯铼中痕量元素K的分析方法。结果表明,AAS法测量K的相对标准偏差不大于9.04%,测定范围为0.000 1%~0.001%,方法检出限为0.003 5μg/m L。本检测方法不仅准确可靠,而且简便快速。     

Effect of Al on microstructure and mechanical properties of cast CrCoNi medium-entropy alloy

Cast Cr Co Ni Alx(x=0-1.2) medium-entropy alloys(MEAs) were produced by arc melting and flip cast to investigate the alloying effect of Al addition on the microstructure, phase constituent and mechanical properties. The crystal structure changes from an initial face-centered cubic(FCC) to duplex FCC and body-centered cubic(BCC) and finally a single BCC with increasing Al content. In the duplex region, FCC and BCC phases form under a eutectic reaction in the interdendrite region. In the single BCC region, the dendrites transform to ordered B2 and disordered A2 BCC phases resulting from spinodal decomposition. Corresponding to their phase constituents, yield strength increases accompanied with an elongation reduction with increasing Al addition. A very interesting phenomenon of very weak ordered FCC(001) spots appearing in Al-0.4 alloy was observed, indicating a local ordering of FCC phase. The changes of fracture surfaces after the tensile deformation are also corresponding to the variations in mechanical properties.     

凝析油、轻烃深加工处理设计

以煤层气处理出来的副产品——凝析油、轻烃为原料,进行深加工处理设计,得到经济附加值更高的几种产品,对此方案进行了工艺流程设计和总体平面布置。     

不同热处理后不锈钢摇椅弓的加、卸载应力及其力学性能的实验研究

目的研究不同热处理不锈钢摇椅弓的加、卸载应力及其力学性能。方法①将12 cm0.018-inch的不锈钢圆丝弯制成4 mm深度的摇椅弓,进行不同温度、时间的热处理。②不锈钢摇椅弓根据不同的热处理情况分为6组：热处理1、2、3、4、5组和未经热处理的对照组,每组50个样本。③用万能材料力学实验机测试各组摇椅弓加、卸载应力值。④在观察1、2、3、4周后分别测试各组不锈钢摇椅弓的加、卸载应力变化情况。结果热处理1、2、3、4、5组和对照组摇椅弓丝的加、卸载应力-应变均呈近似的线性关系,无明显的平台期。热处理2、3、4、5组初始加、卸载应力值与对照组比较差异均有统计学意义（均P〈0.05）,保持后3、4周加、卸载应力值与对照组比较差异均有统计学意义（均P〈0.05）;热处理1组初始加、卸载应力值与对照组比较差异均无统计学意义（均P〉0.05）,保持后1、2、3、4周加、卸载应力值与对照组比较差异均无统计学意义（均P〉0.05）。保持4周后,各组不锈钢摇椅弓的加、卸载应力值均有所减小,热处理2、3、4组的减小程度均低于热处理1组和对照组（均P〈0.05）,热处理5组的减小程度高于对照组（P〈0.05）。经过热处理的不锈钢摇椅弓加卸、载应力与热处理温度200～400℃均呈正相关（r=0.871、0.855,均P〈0.05）。结论对于0.018-inch的不锈钢摇椅弓,在临床上进行热处理温度在200～400℃为宜,可使弓丝刚度增加。     

顺丁橡胶装置丁二烯系统氧含量的控制

通过对大庆石化公司顺丁橡胶装置生产过程的实践和分析,提出几种降低丁二烯系统氧含量的工艺方法和控制手段。从而减少丁二烯系统自聚物的生成,提高装置运行的安全性和稳定性,为装置的长周期运行提供有力保障。     

标准CMOS工艺栅控Si-LED设计与制备

采用新加坡半导体制备有限公司的0.35um EEPROM双栅标准CMOS工艺设计和制备了U型Si-LED发光器件。器件结构采用P+-N+-P+-P+-P+-N+-P+-P+-P+-N+-P+叉指结构形成U型器件,外部的两个P+区为保护环,在相邻的内部两个P+区之间使用多晶硅作为栅极来调控LED的正偏发光。使用奥林巴斯IC显示镜测得了硅LED实际器件的显微图形,并对器件进行了电学的正反向I-V特性测量。器件在室温下正向偏置,在100～140mA电流下对器件进行了光功率的检测,发光峰值在1089nm处。结果表明,器件发光功率随着栅控电压偏置电流的增加而增加。     

Design and fabrication of Si LED with the N-well-P^＋ junction based on standard CMOS technology

A wedge shape Si LED is designed and fabricated with 0.35 μm double-grating standard CMOS technology. The device structure is based on the N-well-P+ junction. The P+ has a wedge shape and is surrounded by the N-well. The micrographs of Si LEDs’ emitting and layout are captured. The I-V characteristic and spectra of the Si LED are tested. Under room temperature and backward bias, its radiant luminosity is 12 nW at 100 mA, and the wavelength of the emitting peak is located at 764 nm.