中国公用电话业务发展值得借鉴的几个案例

随着技术和需求的不断发展,电信市场逐步走向开放,竞争更加激烈。如何抓住信息技术革命的新契机,充分掌握公话的发展方向,成为电信运营商和设备供应商的首要课题。从不同国家的公话案例得到的重要启示是:①无论是发达国家还是发展中国家,归根结底都是市场需求决定了公话的发展趋势;②作为一个运营商,首先要考虑如何优化运营成本,避免重复建设,降低总投资,缩短项目周期,同时还要引进和利用世界上最先进的技术,突破传统语音电路交换网络的限制,利用多种接入方式开展业务;③从全球来看,通信业务将从传统的话音业务逐渐向数据业务发展,运营商可以利用数字通信的优势,为广大公众用户提供个性化数字信息服务     

GHJMn高抗磨合金衬板在大型水泥磨机上的应用

自1882年英国工程师R·A·哈特菲尔德发明标准奥氏体高锰钢(ZGMn13)以来,由于这种韧性较好的耐磨材料,自身具备加工硬化(冷作硬化)的机械性能,诱发A→M相变,可获得高强度、高硬度(HB500以上),从而提高材料耐磨性和使用寿命的特性.所以,一直能够沿用至今天.     

SiCf/SiC陶瓷复合材料的研究进展

SiCf/SiC陶瓷复合材料具有良好的力学性能、高温抗氧化性和化学稳定性，是航空航天和原子能等领域理想的新一代高温结构材料。本文概述了增强体SiCt的发展状况及存在的问题，对SiCt/SiC材料的制备工艺、界面相的研究状态、材料的损伤破坏机理和目前的应用研究进展做了综述，并分析了SiCf/SiC陶瓷复合材料的研究重点和发展前景。     

Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

This paper uses X-ray absorption spectroscopy to study the electronic structure of the high-k gate dielectrics including TM and RE oxides. The results are applicable to TM and rare earth (RE) silicate and aluminate alloys, as well as complex oxides comprised of mixed TM/TM and TM/RE oxides. These studies identify the nature of the lowest conduction band d^* states, which define the optical band gap, E_g, and the conduction band offset energy with respect to crystalline Si, E_B. E_g and E_B scale with the atomic properties of the TM and RE atoms providing important insights for identification high-k dielectrics that meet performance targets for advanced CMOS devices.     

Preparation of Pb(Zr0.52Ti484848)O3 thin films on silicon-on-insulator substrates by excimer laser deposition combined with rapid thermal annealing

In this paper we report the fabrication of ferroelectric Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films on Si-on-Insulator (SOI) substrates with and without an electrode by pulsed excimer laser deposition combined with rapid thermal annealing. Based on the structural and interfacial characteristics analysis by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (XTEM) and automatic spreading resistance measurement (ASR), the film structure and orientation were revealed to be dependent on the annealing time and annealing temperature as well as deposition temperature. From RBS spectra and XTEM observation it is shown that the PZT thin films did not interact with the top silicon layers of SOI and that the composition of the film was similar to the target. The ASR measurements showed that the electrical properties of PZT/SOI as well as PZT/Pt/SOI were abrupt, and that the electrical properties of the SOI substrates were still good after the PZT growth.     

初论带状光纤缆结构设计

推导出了成叠带状光纤在松套管中余长的两个计算公式，此两公式是带状光纤缆结构设计需要用到的基本公式。此外，还对带状光纤缆结构设计作了初步讨论。     

砷化镓声电荷转移延迟线的设计与工艺研究

由于声电荷转移(ACT)这一新颖的高速缓冲抽样技术的发明,使得新一代高速高频信号处理器件的实现成为可能。本文研究了第二代平面结构的ACT器件转移沟道的电位分布特性,给出了平面结构ACT延迟线的设计,并研究了ACT器件的工艺实现。