高职高专电工学课程教学改革

针对高职高专培养应用型人才的要求，分析了目前电工学课程教学的现状，提出了电工学课程改革方案。     

Pd-Ge contact to n-GaAs with the TiW diffusion barrier

Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10⁻⁶ Ω-cm² for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρ_c increasing to 2.94 × 10⁻⁶Ω-cm² and for an aging at 410°C for 40 h with its ρ_c increasing to 1.38 × 10⁻⁵ Ω-cm².     

一个适用于短沟HALO结构MOS器件的直接隧穿栅电流模型

对沟道长度从10μm到0.13μm,栅氧化层厚度为2.5nm的HALO结构nMOS器件的直接隧穿栅电流进行了研究,得到了一个适用于短沟道HALO结构MOS器件的直接隧穿栅电流模型.随着沟道尺寸的缩短,源/漏扩展区占据沟道的比例越来越大,源漏扩展区的影响不再可以忽略不计.文中考虑了源/漏扩展区对直接隧穿栅电流的影响,给出了适用于不同HALO掺杂剂量的超薄栅(2～4nm)短沟(0.13～0.25μm)nMOS器件的半经验直接隧穿栅电流模拟表达式.     

Surface leakage currents in SiN/sub x/ passivated AlGaN/GaN HFETs

A novel guarded surface leakage test structure is used to isolate the surface and bulk leakage contributions to gate current in AlGaN/GaN HFETs. Passivation with various recipes of SiN/sub x/ always resulted in the commonly observed increase in gate leakage, which was found to be dominated by bulk leakage through the AlGaN. However, high temperature deposited SiN/sub x/ recipes gave a 1-2 orders reduction in surface leakage, whereas low temperature deposition gave an increase. Gate lag measurements were found to correlate closely with the surface leakage component, giving direct evidence that the key device problem of current slump is associated with current flow at the AlGaN surface.     

罗801块微生物驱油菌种代谢产物分析

为了研究罗801块微生物驱油菌种代谢产物,从代谢产物化学性质的角度探索驱油作用机理,依据微生物代谢规律,应用气相色谱、气质联用仪(气相色谱-质谱GC-MS)、傅立叶变换红外光谱仪等化学分析仪器和手段,建立了一套通用的驱油菌种代谢产物定性定量分析方法:短链脂肪酸和生物气气相色谱分析,长链脂肪酸、醇类、酚类以及生物烃的预处理和GC-MS分析,醛类、酮类的衍生化及GC-MS分析,生物表面活性物质的薄层层析和红外光谱定性分析,脂类化合物的GC-MS定量分析等;介绍了罗801块驱油菌种代谢产物分析结果:罗801块驱油菌种代谢产物共检出近百种化合物,不同菌种代谢产物种类和数量差异较大。驱油菌种代谢产物分析说明了驱油菌种代谢的复杂性,该研究对矿场试验效果评价及微生物驱油机理探索有重要意义。     

多组分间歇精馏工艺计算探讨

介绍用“微元时段”计算多组分间歇精馏的方法。     

Field dependence of impact ionization coefficients in In/sub 0.53/Ga/sub 0.47/As

Electron and hole ionization coefficients in In/sub 0.53/Ga/sub 0.47/As are deduced from mixed carrier avalanche photomultiplication measurements on a series of p-i-n diode layers, eliminating other effects that can lead to an increase in photocurrent with reverse bias. Low field ionization is observed for electrons but not for holes, resulting in a larger ratio of ionization coefficients, even at moderately high electric fields than previously reported. The measured ionization coefficients are marginally lower than those of GaAs for fields above 250 kVcm/sup -1/, supporting reports of slightly higher avalanche breakdown voltages in In/sub 0.53/Ga/sub 0.47/As than in GaAs p-i-n diodes.