Depression during interferon therapy in chronic hepatitis C patients--a prospective study

The number of patients treated with interferon (IFN) has increased markedly in Japan since 1992, when the Health and Welfare Ministry approved the use of IFN for treating chronic active hepatitis C. It is important to identify and treat depression, which is one of the psychiatric complications of IFN therapy and often leads to discontinuation of the therapy, in patients with chronic hepatitis C. In this study we prospectively investigated the incidence of depression during IFN therapy in patients with chronic active hepatitis C. The psychiatric status of 85 patients (53 men, 32 women; mean age 49.1 years) with chronic active hepatitis C who began receiving IFN at Showa University Hospital was assessed before and 2, 4, 12 and 24 weeks after the start of IFN therapy, using the major depressive episode diagnostic criteria listed in the DSM-III-R and the Hamilton Depression Scale HDS). All of the patients provided informed consent prior to participation in this study. IFN therapy was discontinued in 5 cases (5.9%) because of physical side effects and in 4 cases (4.7%) because of depression. Two, 11, 14, 25 and 16 patients were diagnosed as having major depressive episodes before and 2, 4, 12 and 24 weeks after the start of IFN therapy, respectively. The number of patients who were asymptomatic before the start of IFN therapy but were diagnosed as having a major depressive episode at least once during IFN therapy was 31 (31/83 = 37.3%). The mean HDS scores at 2, 4, 12 and 24 weeks (5.4, 6.0, 8.8 and 6.6) were significantly higher than that before the start of IFN therapy (3.0). The patients whose first diagnosed major depressive episodes occurred more than 4 weeks after the start of IFN therapy tended to be more severely depressed than those in whom it occurred less than 4 weeks after the start of IFN therapy. Compared to the 47 patients who completed 24 weeks of IFN therapy without experiencing depression, the 31 patients who were diagnosed as experiencing major depressive episodes during IFN therapy had significantly higher neuroticism scores determined using the Eysenck Personality Questionnaire, showed a more severely depressed mood and experienced more severe sleep disturbances before the start of IFN therapy. The latter group of patients also tended to have comorbid chronic physical disorders such as hypertension or diabetes mellitus and the histories of mental disorders before the IFN therapy; however these differences were not statistically significant. There were no differences between the two groups in patient age or sex, the severity of hepatitis before the IFN therapy, the type of IFN used in the therapy or the efficacy of IFN in the treatment of the hepatitis C. Our results indicate that the decision as to whether to treat chronic active hepatitis C with IFN should be made carefully and that early intervention and careful monitoring of depression are required during IFN therapy in the treatment of chronic active hepatitis C.     

Low-driving-current temperature-stable 10 Gbit/s operation of p-doped 1.3 /spl mu/m quantum dot lasers between 20 and 90/spl deg/C

Low-driving-current temperature-stable 10 Gbit/s direct modulation was achieved for optimised 200 mum-long short cavity 1.3 mum p-doped quantum dot lasers. Driving conditions were 25.2 mA_p-p for the modulation current and 23.4 mA for the bias current through the whole temperature range from 20 to 90degC     

A high-speed 16-kb GaAs SRAM of less than 5 ns using triple-levelmetal interconnection

The authors have realized 16-kb SRAMs with maximum address access time of less than 5 ns and typical power dissipation of less than 2 W at temperatures ranging from 25°C to 100°C. For the RAMs, they have developed a triple-level Au-based interconnection technology that reduces the wiring length and chip size of the SRAM so as to achieve high speed and high yield. Consequently, the wiring length and chip size are reduced to 69% and 58%, respectively, of those obtained by in previous work. The authors experimentally compared the delay time incurred by double-level interconnection and that by triple-level interconnection. This ratio is found to agree well with the simulated one by a model with distributed RC delay. After successfully suppressing Au hillock generation by lowering the process temperature, yield per wafer of 10% is obtained     

Nonequilibrium austenite/ε-phase eutectic revealed in rapidly solidified high-carbon iron alloy

Formerly Graduate Student, Kyushu Institute of Technology     

Characteristics of laser diodes with a partially intermixedGaAs-AlGaAs quantum well

Laser diodes (LD's) with a partially intermixed quantum-well (QW) active layer are fabricated by Zn out-diffusion from a p-cladding layer to the QW region. The dependencies of the degree of intermixing, measured by the photoluminescence (PL) shift, on Zn concentration of the p-cladding layer (P_clad) and the Al content of the guiding layer (X_g) in a separate-confinement-heterostructure (SCH) are investigated. P_clad changes in the range from 1×10 ¹⁸ cm^-3 to 4×10¹⁸ cm^-3 and X_g changes in the range from 0.21-0.37. When P_clad is 2×10¹⁸ cm^-3 and X_g is 0.37, large bandgap energy shift of 96.1 meV is observed. The lasing wavelengths of the LD's, with the partially intermixed QW, are blue-shifted linearly with increasing P_clad and X_g. For the bandgap energy shift of 66.8 meV by PL, the threshold current density is increased by 33% from that of the nonintermixed LD. Reliability of LD's with the partially intermixed QW is investigated for the first time. In spite of a large degree of intermixing the reliability of the LD with the partially intermixed QW of 66.8 meV energy shift by PL is the same as the nonintermixed one, which is confirmed by the aging test of 2500 hours at 45°C with the output power of 1 W under CW operation     

Electrolyzed-reduced water scavenges active oxygen species and protects DNA from oxidative damage

Active oxygen species or free radicals are considered to cause extensive oxidative damage to biological macromolecules, which brings about a variety of diseases as well as aging. The ideal scavenger for active oxygen should be 'active hydrogen'. 'Active hydrogen' can be produced in reduced water near the cathode during electrolysis of water. Reduced water exhibits high pH, low dissolved oxygen (DO), extremely high dissolved molecular hydrogen (DH), and extremely negative redox potential (RP) values. Strongly electrolyzed-reduced water, as well as ascorbic acid, (+)-catechin and tannic acid, completely scavenged O.-2 produced by the hypoxanthine-xanthine oxidase (HX-XOD) system in sodium phosphate buffer (pH 7.0). The superoxide dismutase (SOD)-like activity of reduced water is stable at 4 degrees C for over a month and was not lost even after neutralization, repeated freezing and melting, deflation with sonication, vigorous mixing, boiling, repeated filtration, or closed autoclaving, but was lost by opened autoclaving or by closed autoclaving in the presence of tungsten trioxide which efficiently adsorbs active atomic hydrogen. Water bubbled with hydrogen gas exhibited low DO, extremely high DH and extremely low RP values, as does reduced water, but it has no SOD-like activity. These results suggest that the SOD-like activity of reduced water is not due to the dissolved molecular hydrogen but due to the dissolved atomic hydrogen (active hydrogen). Although SOD accumulated H2O2 when added to the HX-XOD system, reduced water decreased the amount of H2O2 produced by XOD. Reduced water, as well as catalase and ascorbic acid, could directly scavenge H2O2. Reduce water suppresses single-strand breakage of DNA b active oxygen species produced by the Cu(II)-catalyzed oxidation of ascorbic acid in a dose-dependent manner, suggesting that reduced water can scavenge not only O2.- and H2O2, but also 1O2 and .OH.     

Combined utility of functional MRI, cortical mapping, and frameless stereotaxy in the resection of lesions in eloquent areas of brain in children

We studied 16 children with lesions in the eloquent brain to determine if the amalgamation of information from functional magnetic resonance imaging (fMRI), frameless stereotaxy, and direct cortical mapping and recording could facilitate the excision of these lesions while minimizing potential neurological deficits. The mean age of the children was 10 years. Fourteen children presented with seizures. All lesions were located in or near eloquent cerebral cortex. fMRI was successful in all patients in delineating the relationship between the lesion and regions of task-activated cortex. The ISG wand was utilized in all cases for scalp and bone flap placement, and for intraoperative localization of the lesion. Direct cortical stimulation or recording of phase reversals with somatosensory evoked potentials helped delineate the central sulcus and language cortex in patients with lesions near the motor or language cortex. Intraoperative electrocorticography (ECoG) was utilized in all patients who presented with seizures to guide the extent of resection of the epileptiform cortex. Ten children had benign cerebral neoplasms, nine of which were totally resected. The other diagnoses included vascular malformations, Sturge-Weber, tuberous sclerosis, Rasmussen's encephalitis, and primitive neuroectodermal tumor. Only 1 patient with a left Rolandic AVM developed a new neurological deficit postoperatively. Thirteen of fourteen patients who presented with seizure disorders were rendered either seizure free or improved in terms of seizure control postoperatively. Follow-up has ranged from 12 to 18 months, with a mean follow-up of 15 months. We conclude that the techniques of fMRI, frameless stereotaxy, direct cortical stimulation and recording can be utilized in sequence to accurately localize intracerebral lesions in eloquent brain, and to reduce the morbidity of resecting these lesions in children.     

A GaAs MESFET with a partially depleted p layer for SRAMapplications

A GaAs MESFET with a partially depleted p layer that has a specific application to SRAMs has been developed. The short-channel effect is well suppressed for gate lengths down to 0.5 μm by a rather dense p layer buried under the channel. Its acceptor ion dose is as high as 2×10¹² cm^-2, which corresponds to a partially depleted condition. As for applications for SRAMs, it is possible to attain fully functional 7-ns 4-kb SRAMs that are operative at 75°C by using the FET with a 1-μm gate. A chip yield of 22% has been achieved in a 3-in wafer