高硼铸钢衬板的组织和性能

针对高锰钢衬板初始硬度低,在中、小型球磨机的工况条件下不能充分发挥加工硬化效应的情况,研制了高硼铸钢衬板。该衬板是在低碳钢中加入硼合金元素的同时添加少量其他合金元素,可以获得一定数量的高硬度Fe2B化合物,基体是强韧性好的板条马氏体,综合力学性能与耐磨性良好,硬度大于58 HRC,冲击韧性大于12 J/cm2,适用于小能量多冲击的凿削磨损型工况条件。用于替代高锰钢制造球磨机衬板,寿命比高锰钢提高2倍以上,且价格相当,经济效益好。     

队列行驶车辆的空气动力特性

为了研究队列行驶时,车辆前后间距对队列行驶车辆气动特性的影响以及队列中车辆数目对气动阻力系数的影响,采用数值模拟方法分别对智能交通系统中队列行驶车辆11种不同情况下车辆的气动特性分别进行了研究。结果表明:队列行驶车辆随车间距离的缩短,阻力值降低。在固定间距下,随着队列中车辆数目的增加,平均阻力系数可降低20%—30%,阻力最低的车大致处于车队的中心位置。     

预见PWM控制在轧机调速系统中的应用

首先介绍了单传动轧机主传动调速系统的硬件结构，然后阐述了最优预见PWM控制原理及其工程应用。预见PWM控制新技术在轧机主传动调速系统中的成功应用解决了在采用PWM技术载波频率较低的情况下波形失真较高的问题，消除了脉动转矩，提高了控制精度，延长了功率开关器件的使用寿命。实践证实了这一新技术的有效性。     

On the minimum pseudo-codewords of LDPC codes

In this letter, we study the minimum pseudo-codewords of low-density parity-check (LDPC) codes under linear programming (LP) decoding. We show that a lower bound of Chaichanavong and Siegel on the pseudo-weight of a pseudo-codeword is tight if and only if this pseudo-codeword is a real multiple of a codeword. Using this result we further show that for some LDPC codes, e.g., Euclidean plane and projective plane LDPC codes, there are no other minimum pseudo-codewords except the real multiples of minimum codewords.     

On the stopping distance of finite geometry LDPC codes

In this letter, the stopping sets and stopping distance of finite geometry LDPC (FG-LDPC) codes are studied. It is known that FG-LDPC codes are majority-logic decodable and a lower bound on the minimum distance can be thus obtained. It is shown in this letter that this lower bound on the minimum distance of FG-LDPC codes is also a lower bound on the stopping distance of FG-LDPC codes, which implies that FG-LDPC codes have considerably large stopping distance. This may explain in one respect why some FG-LDPC codes perform well with iterative decoding in spite of having many cycles of length 4 in their Tanner graphs.     

Comprehensive Study of Emitter-Ledge Thickness of InGaP/GaAs HBTs

A comprehensive study of emitter-ledge thickness of InGaP/GaAs heterojunction bipolar transistors (HBTs) has been undertaken. It is shown that the recombination rate and electron densities are drastically increased near the exposed base surface between the base contact and the emitter ledge. In contrast, the corresponding hole densities are decreased. If the emitter ledge is too thick, current will flow through the undepleted ledge, which increases the emitter-size effect. In contrast, if the emitter ledge is too thin, it may not effectively passivate the surface. Therefore, the thickness of the emitter ledge is a crucial issue and should be carefully considered. It is shown that, from simulated and experimental results, the optimum emitter-ledge thickness of InGaP/GaAs HBT is 100-200 Aring     

A Novel Pt/In0.52Al0.48As Schottky Diode-Type Hydrogen Sensor

On the basis of a Pt/In_0.52Al_0.48As metal-semiconductor structure, a novel hydrogen sensor is fabricated and demonstrated. The studied Pt/In_0.52Al_0.48As Schottky diode-type hydrogen sensor exhibits significant sensing performance including high relative sensitivity ratio of about 2600% (under the 1% H₂/air gas and V_R=-0.5 V at 30 degC), large current variation of 310 muA (under the 1% H₂/air gas and V_R=-5 V at 200 degC), widespread reverse-voltage regime (0~-5 V), stable hydrogen-sensing current-voltage (I-V) curves, and fast transient response time of 1.5 s. The calculated Schottky barrier-height change and series-resistance variation, from the thermionic-emission model and Norde method, are 87.0 meV and 288 Omega, respectively (under the 1% H₂/air gas at 30 degC). The hydrogen concentrations and operating temperatures tested in this letter are in the range of 15 ppm-1% H₂/air and 30 degC-250 degC, respectively. Based on the excellent integration compatibility with InP-based electronic devices, the studied device provides the potentiality in high-performance sensor-array applications     

InxGa1-xN合金薄膜In的表面分凝现象

用MOCVD方法在α-Al2O3(0001)衬底上外延生长了InxGa1-xN合金薄膜.测量结果显示:所制备的InxGa1-xN样品中In的组分随外延生长温度而改变,生长温度由620℃升高到740℃,In的组分由0.72降低到0.27.这是由于衬底温度越高,In进入InxGa1-xN薄膜而成键的效率越低.样品的X射线衍射谱和X射线光电子能谱均显示:在生长温度为620℃和690℃时所生长的InxGa1-xN样品中均存在明显的In的表面分凝现象;而生长温度升至740℃时所得到的InxGa1-xN样品中,In的表面分凝现象得到了有效抑制.保持生长温度不变而将反应气体的Ⅴ/Ⅲ比从14000增加到38000,In的表面分凝现象也明显减弱.由此可以认为,较高的生长温度使得In原子的表面迁移能力增强,In原子从InxGa1-xN表面解吸附的几率增大,而较高的Ⅴ/Ⅲ比则能增加N与In成键几率,从而有利于抑制In的表面分凝.     

反应堆系统数字化实时仿真的高效实现

根据实验反应堆的物理特性，建立堆芯动态模型，探讨多种实时仿真算法的实现途径。研究提出了进行数字化实时仿真的一种高效实现方法。为配合功率调节系统半实物仿真试验而实现了一座实验反应堆在Windows平台下的实时仿真系统。      

引黄工程计算机监控系统中的数据通信规约

介绍了引黄工程WAN结构和配置,提出了引黄工程计算机监控系统中数据通信的分层分布式结构模式,其通信协议采用TCP/IP协议,传输层的数据格式为DNP3.0,现地层采用现场总线和RS LINK通信协议。这些协议的开放性以及现地协议的实时性,既满足了引黄工程后期建设对计算机监控系统开放和可扩充的要求,又实现了全线自动调度调节以及现地实时控制的功能。