Particle‐Scale Investigation of Heat Transfer in Radiation‐Driven Char Gasification

A model of the steam gasification of a single char particle driven by high‐intensity radiation was developed and experimentally verified with available measurements in the literature. This was used to explore the sensitivity of the particle surface temperature and heat‐transfer mechanisms to variations in particle diameters, radiative heat flux, and the concentration of the gasification agent H₂O under typical conditions for solar gasification reactors. The results highlight the importance of the particle diameter in influencing solar‐to‐chemical energy conversion efficiency and assist in the selection of appropriate feedstock particles to match the conditions in specific solar gasification reactors.     

Eigenanalysis and reduced-order modelling of unsteady partial cavity flows using the boundary element method

This paper presents an efficient reduced-order modelling approach to predict unsteady behaviour of partial cavity flows (PCROM). The boundary element method (BEM) along with the potential flow is used to analyze unsteady partial cavity flows. Partial cavity flow is modelled based on a new non-iterative approach and the PCROM is based on fluid eigenmodes. To construct fluid eigenmodes the spatial iterative scheme to find cavity extent is removed. The eigenvalue problem of the unsteady flows is defined based on the unknown wake singularities. Eigenanalysis and reduced-order modelling of unsteady flows over a NACA 16-006 section are performed using the PCROM. Numerical examples are presented to demonstrate the accuracy of the proposed method. Comparison between the obtained results of the proposed method and those of other and conventional method indicates that the present algorithm works well with sufficient accuracy. Moreover, it is shown that the PCROM is computationally more efficient than the conventional one for unsteady sheet cavitations analysis on hydrofoils.     

Investigation of the strain‐rate‐dependent mechanical behavior of a photopolymer matrix composite with fumed nano‐silica filler

With the evolution of additive manufacturing, there is an increasing demand to produce high strength and stiffness polymers. Photopolymers are very commonly used in stereolithography and fused deposition modeling processes, but their application is limited due to their low strength and stiffness values. Nano‐sized fibers or particles are generally embedded in the polymer matrix to enhance their properties. In this study, we have studied the effect of fumed nano‐sized silica filler on the elastic and viscoelastic properties of the photopolymer. The uniaxial testing coupons with different concentrations of silica filler have been fabricated via casting. We observed improvement in mechanical properties by the addition of the nano‐sized filler. As polymers exhibit time‐dependent mechanical response, we have conducted tensile tests at different strain rates as it is one of the most common modes of deformation, and is commonly used to characterize the parameters of the rate‐dependent material. We noticed significant dependence of the mechanical properties on the strain rate. quasi‐linear viscoelastic (QLV) model, which combines hyperelastic and viscoelastic phenomena, has been employed to capture the response of the material at different strain rates. We found out that the QLV model with Yeoh strain energy density function adequately describes the rate‐dependent behavior of the material and has reasonable agreement with the experimental results. POLYM. ENG. SCI., 59:1695–1700 2019. © 2019 Society of Plastics Engineers     

Non‐Invasive High‐Throughput Metrology of Functionalized Graphene Sheets

The utilization of fluorescence quenching microscopy (FQM) for quick visualization of chemical functionalization in relatively large regions of graphene, grown via chemical vapor deposition (CVD), is discussed. Through reactive ion plasma etching, patterns of p‐type CVD‐grown graphene functionalized with fluorine are generated. 4‐(dicyanomethylene)‐2‐methyl‐6‐(4‐dimethylaminostyryl)‐4H‐pyran (DCM) is used as the fluorescent agent. The emission of DCM is quenched to a different extent by fluorinated and pristine graphene, which provides the fluorescence‐imaging contrast essential for this metrology. To probe the functionalized surface patterns with DCM, the dye is dispersed in polymethylmethacrylate (PMMA) then the graphene surface is coated, forming a 30‐nm‐thick DCM‐PMMA layer. Fluorescence images of dye‐coated graphene distinctly reveal the difference between the chemically treated and as‐grown regions. The pristine graphene quenches the DCM emission more efficiently than the fluorinated graphene. Therefore, the regions with pristine graphene appear darker on the fluorescence images than the regions with fluorinated graphene, enabling large‐scale mapping of the functionalized regions in CVD grown graphene sheets Due to its simplicity and consistent results, FQM is now poised for widespread adoption by graphene manufacturers as a basis for facile and high throughput metrology of large‐scale graphene sheets.     

Models for electron and hole mobilities in MOS accumulation layers

We present new physically based effective mobility models for both electrons and holes in MOS accumulation layers. These models take into account carrier-carrier scattering, in addition to surface roughness scattering, phonon and fixed interface charge scattering, and screened Coulomb scattering. The newly developed effective mobility models show excellent agreement with experimental data over the range 1×10¹⁶-4×10¹⁷ cm^-3 for which experimental data are available. Local-field dependent mobility models have also been developed for both electrons and holes, and they have been implemented in the two-dimensional (2-D) device simulators, PISCES and MINIMOS, thus providing for more accurate prediction of the terminal characteristics in deep submicron CMOS devices. In addition, transition region mobility models have been developed to account for the transition in the mobility in going from the accumulation layer in the gate-to-source overlap region to the inversion layer region in the channel     

Influence of humidity on creep response of sandwich beam with a viscoelastic soft core

Polymer foam cored sandwich beams are widely used in load-bearing components due to their high strength to weight ratio. To improve the reliability in using sandwich beams, it is essential to understand their long-term creep response in terms of variation of stresses and deformations with time under external mechanical and environmental stimuli. This paper presents an analytical model for investigating the creep response of sandwich beams made with a viscoelastic soft core, including the effect of the variable ambient humidity under the sustained load and its influence on the creep behavior. The model is based on a high-order viscoelastic structural modeling. The soft core is modeled as a viscoelastic material using differential-type constitutive relations that are based on the linear Boltzman’s principle of superposition and accounting for the deformability of the core in shear and through its thickness. Several numerical examples are presented in order to show the capability of the model and to investigate the effect of moisture on the creep behavior of sandwich beams. Finite element simulations of the creep response of sandwich beams are also performed using ABAQUS software to validate the proposed theoretical model. The results show the concentrations of shear and transverse normal stresses near the edges and their variation in time and with the change of humidity.     

Effect of polyethylenimine on electrophoretic deposition of TiO2 nanoparticles in alternating current electric field

In this work, AC electric field was applied to deposit TiO₂ nanoparticles dispersed in Acetone on coplanar electrodes. The experiments were performed in presence and absence of an additive, polyethylenimine (PEI), at frequencies of 1 Hz and 10 kHz. It was revealed that deposition pattern changed dramatically by addition of PEI which makes particles to fill the inter electrode gap at both frequencies. When PEI is added, particles show different behavior. While they tend to fill the gap randomly at 1 Hz, they form chainlike pattern at 10 kHz. Chain formation of particles in the gap indicates presence of dielectrophoretic (DEP) forces. The ability of particles to polarize in both suspensions at 10 kHz are calculated by a multi-shell model in order to find DEP force. According to this model, the polarizability for particles in the suspension with PEI is more than the other, so DEP forces applied more strongly on them and promotes chain formation.     

Two-dimensional energy-dependent models for the simulation ofsubstrate current in submicron MOSFET's

Two-dimensional energy-dependent substrate current models are described for NMOS and PMOS devices that have been developed using a multi-contour approach. The new models offer a significant improvement in the calculation of substrate current due to a more accurate calculation of the average energy as compared to the local-field model. The models are implemented in a post-processing manner by applying a one-dimensional energy conservation equation to each of many current contours in order to generate a two-dimensional representation of average energy and impact ionization rate, that is then integrated to calculate the substrate current. The new models have been compared to substrate current characteristics of a variety of NMOS and PMOS devices for a wide range of bias conditions and channel lengths, and very good agreement has been obtained with a single set of model parameters. An additional significance of this work is the enhancement of the standard multi-contour model by an energy-sink term that results in an improved prediction of the impact ionization process in PMOSFET's     

An energy-dependent two-dimensional substrate current model for thesimulation of submicrometer MOSFET's

A multicurrent contour, average-energy-based, substrate current model for silicon submicrometer NMOSFETs is presented as a significant improvement to the local-field model that is commonly used in modern drift-diffusion device simulators. The model is implemented as a post-processor by applying a one-dimensional energy conservation equation to many current contours in order to generate a two-dimensional representation of average energy and impact ionization rate which is integrated to calculate the substrate current. Comparisons of simulations and experimental I-V curves for both simple and LDD MOSFETs are presented. Outstanding agreement has been obtained over a wide range of bias conditions and channel lengths