Circular beam emission from 1.3 μm InGaAsPstrained-multiquantum-well lasers

The beam divergence in the vertical direction from a graded index separate confinement heterostructure (GRINSCH) multiquantum-well (MQW) laser has been studied. It is demonstrated both theoretically and experimentally that a circular beam MQW laser can be produced by choosing appropriate thicknesses for the GRINSCH layers, while maintaining other desired laser characteristics. The beam divergence is found to be more affected by the index change induced by injected carriers than by strain in the MQW active layer. Theoretical results are in good agreement with the measurements for 1.3-μm InGaAsP strained MQW lasers     

A new type of arc plasma reactor with 12-phase alternating current discharge for synthesis of carbon nanotubes

A new type of arc plasma reactor with 12-phase alternating current (AC) discharge for synthesis of carbon nanotubes (CNTs) is proposed. A couple of six discharge electrodes by which have mutually electrical connection between them to enlarge the high-temperature regions in the reactor are arranged to three-dimensional locations. A new method of CNTs fabrication by this reactor, which accomplishes to enlarge the suitable growth region in high purity and at high yield, was developed.     

1.5 Tbit/s (75/spl times/20 Gbit/s) DWDM transmission using Er/sup 3+/-doped tellurite fibre amplifiers with 63 nm continuous signal band

63 nm continuous signal band of a 1.5 Tbit/s (75/spl times/20 Gbit/s) dense wavelength division multiplexed transmission over 200 km was demonstrated by applying Er/sup 3+/-doped tellurite fibre amplifiers.     

High-temperature single-mode operation of 1.3-μm strained MQWgain-coupled DFB lasers

Single-mode and high-power operation at temperatures up to 120°C has been achieved in 1.3-μm strained MQW gain-coupled DFB lasers. A stable lasing wavelength is maintained due to a large modal facet loss difference of the two Bragg modes, which is provided by the gain-coupling effect. A very low temperature dependence of the threshold current has been obtained by detuning the lasing wavelength to the long wavelength side of the material gain peak at room temperature, which effectively compensates the waveguide loss at higher temperatures. An infinite characteristic temperature T_o can be realized at certain ranges of temperature depending on the detuning value     

Syntheses and structural properties of four Rb-aluminosilicate zeolites

Four types of Rb-aluminosilicate zeolites were hydrothermally synthesized in pure phase for the first time from Rb-aluminosilicate gels without using any organic structure-directing agent (SDA) under stirring conditions. The crystal structure of each zeolite was refined by Rietveld analysis of the X-ray diffraction (XRD) data. These crystal structures were confirmed to be Rb-mordenite, Rb-merlinoite, a new aluminosilicate zeolite with an ATT framework topology, and Rb-offretite denoted by RMA-1, RMA-2, RMA-3, and RMA-4, respectively. The Si/Al ratio of RMA-1 with an MOR topology varied from 5.3 to 8.0; however, the variation of the Si/Al ratios of the other zeolites was rather small. The crystal system of RMA-2 was tetragonal with space group I4/mmm, where two Rb sites were distributed at the center of an 8-membered ring (MR). On the other hand, two Rb sites in RMA-3 were located at the center of the 8-MR in small two cages. The structure of RMA-4 was identified as the OFF type with a local disorder or defect, which included a small amount of an intergrown ERI phase.     

Fluorescence in situ hybridization analysis of chromosome 1p36 deletions in human MYCN amplified neuroblastoma

Artificial illumination is an important factor in the management of layers. In this study, a new monochromatic light system was developed for egg layers. Prelaying pullets (Lohmann) were marked and housed in nine light and temperature control rooms (15 battery cages, 3 hens per cage; n = 45), divided into three light treatments: 0.1 and 0.01 W/m2 light intensity using light emitting diode (LED) lamps and 0.1 W/m2 using mini-fluorescent bulbs (PL) (control). In each of the LED rooms, three wavelengths were tested: 560 (n = 9), 660 (n = 9), 880 (n = 6), and 660 intermitted lighting (15 min light 45 min dark, 660IN) (n = 9). Birds were exposed to 12 h light and 12 h of darkness using PL lamps. At 21 wk of age, the light period was increased to 12.75 h by using 5.5 h of LED lamps and 7.25 of PL light source for Groups 1 and 2, the third group received 12.75 h of PL light. Until 28 wk of age, light hours increased by 0.5 h/w using LED light for Groups 1 and 2 and PL source for the third group, reaching 16 h of light at 28 wk of age. Egg production and feed consumption were recorded daily; egg components were recorded weekly for 10 mo. A significant reduction in egg production was observed in all 880nm groups; no differences in egg production and quality were found in the other groups. Feed consumption was significantly lower by 7% in all 0.01 W/m2 groups. We suggest that an important reduction in rearing costs of laying hens may be obtained by using this system.     

Spontaneous emission model of surface-emitting DFB semiconductorlasers

A general spontaneous emission model is developed for surface-emitting (SE) distributed feedback (DFB) semiconductor lasers. The frequency distribution of spontaneous emission noise below lasing threshold and the spontaneous emission rate in lasing operation are formulated by using a transfer matrix method combined with the Green's function method. The effective linewidth enhancement factor is obtained from this model in terms of the elements of the transfer matrix. By way of example, the author applies the formulation to a standard SE DFB laser, and a SE λ/4-shifted DFB laser with a distributed Bragg reflector (DBR) mirror. In particular, the author analyzes the below-threshold spectrum, the threshold current density, the differential quantum efficiency, and the spectral linewidth of these lasers     

Highly reliable a‐IGZO TFTs on a plastic substrate for flexible AMOLED displays

We have successfully reduced threshold voltage shifts of amorphous In–Ga–Zn–O thin‐film transistors (a‐IGZO TFTs) on transparent polyimide films against bias‐temperature stress below 100 mV, which is equivalent to those on glass substrates. This high reliability was achieved by dense IGZO thin films and annealing temperature below 300 °C. We have reduced bulk defects of IGZO thin films and interface defects between gate insulator and IGZO thin film by optimizing deposition conditions of IGZO thin films and annealing conditions. Furthermore, a 3.0‐in. flexible active‐matrix organic light‐emitting diode was demonstrated with the highly reliable a‐IGZO TFT backplane on polyimide film. The polyimide film coating process is compatible with mass‐production lines. We believe that flexible organic light‐emitting diode displays can be mass produced using a‐IGZO TFT backplane on polyimide films.